SeCoS ES11M 1.0 amp surface mount efficient fast rectifier Datasheet

ES11M~ES15M
50 ~ 600 V
1.0 Amp Surface Mount Efficient Fast Rectifiers
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen-free and RoHS Compliant
DESCRIPTIONS
z
z
z
z
z
z
z
z
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to optimize board space.
Small plastic SMD package.
tRR less than 25nS for high efficiency
Low forward drop down voltage
High surge and high current capability.
Superfast recovery time for switching mode application.
Glass-passivated chip junction.
SOD-123M
A
PACKAGING INFORMATION
z
z
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Case: Molded plastic
Epoxy: UL94-V0 rate flame retardant
Weight: 0.0270 g (approximately)
B
F
D
C
MARKING CODE
Part Number
ES11M
ES12M
ES13M
E
Marking Code
E1
E2
E3
Part Number
ES14M
ES15M
Marking Code
E4
E5
REF.
A
B
C
Millimeter
Min.
Max.
3.50
3.90
1.40
1.80
1.30
1.70
E
REF.
D
E
F
Millimeter
Min.
Max.
3.60 (MAX.)
0.80 (TYP.)
0.30 (TYP.)
ELECTRICAL CHARACTERISTICS AND RATINGS (TA = 25°C unless otherwise specified.)
PARAMETERS
PART NUMBERS
SYMBOL
UNITS
TESTING
CONDITIONS
ES11M
ES12M
ES13M
ES14M
ES15M
VRRM
50
100
200
400
600
V
VRMS
35
70
140
280
420
V
Reverse Voltage (Max.)
VR
50
100
200
400
600
V
Forward Voltage (Max.)
VF
1.25
1.75
V
IF = 1A
Average Forward
Rectified Current (Max.)
IO
A
Ambient
temperature = 55°C
A
8.3ms single half
sine-wave
superimposed on
rated load (JEDEC
method)
Recurrent Peak
Reverse Voltage (Max.)
RMS Voltage (Max.)
Peak Forward Surge Current
IFSM
0.875
1.0
30
5.0
DC Reverse Current at
Rated DC Blocking Voltage (Max.)
IR
Reverse Recovery Time
tRR
25
nS
Junction Capacitance (Typ.)
CJ
15
pF
TSTG, TJ
-65 ~ 175, -55 to 150
°C
Storage and Operating
Temperature Range
01-December-2008 Rev. A
100
μA
VR=VRRM, TA=25°C
VR=VRRM, TA=125°C
f=1MHz and
applied 4V DC
reverse voltage
Page 1 of 2
ES11M~ES15M
50 ~ 600 V
1.0 Amp Surface Mount Efficient Fast Rectifiers
Elektronische Bauelemente
RATINGS AND CHARACTERISTIC CURVES
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.1-TYPICAL FORWARD
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT,(A)
10
ES11M ~ ES13M
1
ES14M
T j =25°C
1.2
1.0
0.8
Single Phase
0.6
Half Wave 60Hz
Resistive Or Inductive Load
0.4
0.375"(9.5mm) Lead Length
0.2
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE ( C)
0.1
ES15M
pulse width =300μS
1% duty cycle
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50W
NONINDUCTIVE
10W
NONINDUCTIVE
( )
(+)
D.U.T.
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
( )
PEAK FORWARD SURGE CURRENT,(A)
30
(+)
1W
NONINDUCTIVE
25
20
8.3ms Single Half
TJ=25 C
Sine Wave
15
JEDEC method
10
0
1
OSCILLISCOPE
(NOTE 1)
5
50
10
100
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
40
JUNCTION CAPACITANCE,(pF)
trr
|
|
|
|
|
|
|
|
+0.5A
0
-0.25A
-1.0A
30
25
20
15
10
5
1cm
SET TIME BASE FOR
10 / 20ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
01-December-2008 Rev. A
Page 2 of 2
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