Renesas FS50SM-06 High-speed switching use Datasheet

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MITSUBISHI Nch POWER MOSFET
FS50SM-06
HIGH-SPEED SWITCHING USE
FS50SM-06
OUTLINE DRAWING
Dimensions in mm
4.5
15.9MAX.
1.5
20.0
5.0
r
4
2
f 3.2
19.5MIN.
2
1.0
q
w
5.45
4.4
G
e
5.45
0.6
2.8
4
wr
¡10V DRIVE
¡VDSS .................................................................................. 60V
¡rDS (ON) (MAX) .............................................................. 22mΩ
¡ID ......................................................................................... 50A
¡Integrated Fast Recovery Diode (TYP.) ............. 65ns
q GATE
w DRAIN
e SOURCE
r DRAIN
q
e
TO-3P
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Ratings
Unit
VDSS
Drain-source voltage
VGS = 0V
60
V
VGSS
ID
Gate-source voltage
Drain current
VDS = 0V
±20
50
V
A
IDM
IDA
Drain current (Pulsed)
Avalanche drain current (Pulsed)
200
50
A
A
IS
ISM
Source current
Source current (Pulsed)
50
200
A
A
PD
T ch
Maximum power dissipation
Channel temperature
70
–55 ~ +150
W
°C
–55 ~ +150
°C
g
T stg
—
Parameter
Conditions
L = 100µH
Storage temperature
Weight
Typical value
4.8
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50SM-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
IGSS
Drain-source breakdown voltage
Gate-source leakage current
IDSS
VGS (th)
Drain-source leakage current
Gate-source threshold voltage
rDS (ON)
Drain-source on-state resistance
VDS (ON)
y fs
Drain-source on-state voltage
Forward transfer admittance
Ciss
Coss
Input capacitance
Output capacitance
Crss
td (on)
Reverse transfer capacitance
Turn-on delay time
tr
td (off)
Rise time
Turn-off delay time
tf
Fall time
VSD
Rth (ch-c)
Source-drain voltage
Thermal resistance
trr
Reverse recovery time
Limits
Test conditions
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 60V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 25A, VGS = 10V
Unit
Min.
Typ.
Max.
60
—
—
—
—
±0.1
V
µA
—
2.0
—
3.0
0.1
4.0
mA
V
—
17
22
mΩ
ID = 25A, VDS = 10V
—
—
0.43
32
0.55
—
V
S
VDS = 10V, VGS = 0V, f = 1MHz
—
—
2300
570
—
—
pF
pF
—
—
280
35
—
—
pF
ns
—
—
95
95
—
—
ns
ns
ID = 25A, VGS = 10V
VDD = 30V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω
IS = 25A, VGS = 0V
Channel to case
IS = 50A, dis/dt = –100A/µs
—
80
—
ns
—
—
1.0
—
1.5
1.78
—
65
—
V
°C/W
ns
PERFORMANCE CURVES
80
60
40
20
0
MAXIMUM SAFE OPERATING AREA
3
2
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
100
0
50
100
150
200
100ms
101
7
5
3
2
1ms
10ms
100ms
DC
100
7 TC = 25°C
5 Single Pulse
3
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V 10V
100
tw = 10ms
102
7
5
3
2
10V 8V
50
VGS = 20V
7V
80
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
8V
TC = 25°C
Pulse Test
60
6V
40
PD = 70W
20
6V
7V
40
PD = 70W
30
20
5V
10
TC = 25°C
Pulse Test
5V
0
0
1
2
3
4
DRAIN-SOURCE VOLTAGE VDS (V)
5
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50SM-06
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
1.6
1.2
ID = 80A
0.8
50A
0.4
20A
0
0
4
8
12
FORWARD TRANSFER
ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
TC = 25°C
VDS = 10V
Pulse Test
20
20V
10
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
102
VDS = 10V
7
Pulse Test
5
4
3
2
TC = 25°C
75°C
125°C
101
7
5
4
3
2
0
4
8
12
16
100 0
10
20
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
Tch = 25°C
VGS = 0V
f = 1MHZ
104
102
7
5
3
2
VGS = 10V
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
40
103
7
5
3
2
20
TRANSFER CHARACTERISTICS
(TYPICAL)
60
7
5
3
2
30
DRAIN CURRENT ID (A)
80
0
40
0
20
TC = 25°C
Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
100
CAPACITANCE
Ciss, Coss, Crss (pF)
16
50
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (mΩ)
TC = 25°C
Pulse Test
Ciss
Coss
Crss
SWITCHING TIME (ns)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
2.0
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
103
7
5
4
3
Tch = 25°C
VDD = 30V
VGS = 10V
RGEN = RGS = 50Ω
2
td(off)
102
7
5
4
3
tf
tr
td(on)
2
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50SM-06
HIGH-SPEED SWITCHING USE
20
SOURCE CURRENT IS (A)
VDS = 10V
12
20V
40V
8
4
0
20
40
60
80
40
75°C
25°C
20
0
0.4
0.8
1.2
1.6
2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
2
100
7
5
4
3
2
–50
0
50
100
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
150
CHANNEL TEMPERATURE Tch (°C)
0.4
TC = 125°C
60
GATE CHARGE Qg (nC)
101
7 VGS = 10V
ID = 1/2ID
5 Pulse Test
4
3
10–1
VGS = 0V
Pulse Test
80
0
100
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
100
Tch = 25°C
ID = 50A
16
0
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
GATE-SOURCE VOLTAGE VGS (V)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
102
7
5
3
2
101
7
5
3 D = 1.0
2
100 0.5
7 0.2
PDM
5
3
0.1
tw
2
0.05
T
10–1
0.02
7
D= tw
5
0.01
T
3
Single Pulse
2
10–2 –4
10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999
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