ON MJD243 Complementary silicon plastic power transistor Datasheet

MJD243(NPN),
MJD253(PNP)
Complementary Silicon
Plastic Power Transistors
DPAK−3 for Surface Mount Applications
www.onsemi.com
Designed for low voltage, low−power, high−gain audio amplifier
applications.
4.0 A, 100 V, 12.5 W
POWER TRANSISTOR
Features
• High DC Current Gain
• Lead Formed for Surface Mount Applications in Plastic Sleeves
•
•
•
•
•
•
•
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Low Collector−Emitter Saturation Voltage
High Current−Gain − Bandwidth Product
Annular Construction for Low Leakage
Epoxy Meets UL 94 V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Value
Unit
VCB
100
Vdc
VCEO
100
Vdc
VEB
7.0
Vdc
IC
4.0
Adc
8.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
12.5
0.1
W
W/°C
Total Device Dissipation
@ TA = 25°C (Note 2)
Derate above 25°C
PD
1.4
0.011
W
W/°C
TJ, Tstg
−65 to +150
°C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM
C
V
Operating and Storage Junction
Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted on minimum pad sizes recommended.
© Semiconductor Components Industries, LLC, 2013
September, 2016 − Rev. 17
COLLECTOR
2, 4
1
BASE
1
COLLECTOR
2, 4
1
BASE
3
EMITTER
3
EMITTER
4
4
1
Symbol
ICM
Collector Current − Peak
COMPLEMENTARY
2
1 2
3
IPAK
CASE 369D
STYLE 1
3
DPAK−3
CASE 369C
STYLE 1
MARKING DIAGRAMS
AYWW
J253G
IPAK
A
Y
WW
x
G
AYWW
J2x3G
DPAK
= Assembly Location
= Year
= Work Week
= 4 or 5
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
MJD243/D
MJD243 (NPN), MJD253 (PNP)
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
Symbol
Value
RqJC
RqJA
10
89.3
Min
Max
100
−
−
−
100
100
−
100
40
15
180
−
−
−
0.3
0.6
−
1.8
−
1.5
40
−
−
50
Unit
°C/W
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 2)
2. When surface mounted on minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Unit
OFF CHARACTERISTICS
VCEO(sus)
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 10 mAdc, IB = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TJ = 125°C)
ICBO
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
DC Current Gain (Note 3)
(IC = 200 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
hFE
Collector−Emitter Saturation Voltage (Note 3)
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)
Base−Emitter Saturation Voltage (Note 3)
(IC = 2.0 Adc, IB = 200 mAdc)
VBE(sat)
Base−Emitter On Voltage (Note 3)
(IC = 500 mAdc, VCE = 1.0 Vdc)
VBE(on)
Vdc
nAdc
mAdc
nAdc
−
Vdc
Vdc
Vdc
DYNAMIC CHARACTERISTICS
fT
Current−Gain − Bandwidth Product (Note 4)
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MHz
Cob
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%.
4. fT = ⎪hFE⎪• ftest.
www.onsemi.com
2
MJD243 (NPN), MJD253 (PNP)
10
IC, COLLECTOR CURRENT (AMPS)
PD, POWER DISSIPATION (WATTS)
TA TC
2.5 25
2 20
1.5 15
TA (SURFACE MOUNT)
1 10
TC
0.5
100ms
1ms
2
1
5ms
0.5
0.2
0.02
0
0.01
25
T, TEMPERATURE (°C)
2
5
10
20
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Power Derating
Figure 2. Active Region Maximum
Safe Operating Area
50
75
100
125
150
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.02
1
100
The data of Figure 2 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
≤ 150°C. TJ(pk) may be calculated from the data in Figure 3.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
1
0.7
0.5
dc
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
0.1
0.05
5
0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
500ms
5
D = 0.5
0.2
0.1
RqJC(t) = r(t) qJC
RqJC = 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.05
0.02
0.01
0 (SINGLE PULSE)
0.05
0.1
0.2
0.5
1
2
t, TIME (ms)
5
Figure 3. Thermal Response
www.onsemi.com
3
10
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
20
50
100
200
MJD243 (NPN), MJD253 (PNP)
NPN
MJD243
PNP
MJD253
200
500
VCE = 1.0 V
VCE = 2.0 V
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
300
200
TJ = 150°C
25°C
100
70
50
-55°C
30
20
10
7.0
5.0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
IC, COLLECTOR CURRENT (AMP)
2.0
25°C
-55°C
30
20
10
7.0
5.0
3.0
2.0
0.04 0.06
4.0
VCE = 1.0 V
VCE = 2.0 V
TJ = 150°C
100
70
50
0.1
0.2
0.4 0.6
1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
Figure 4. DC Current Gain
1.4
1.4
TJ = 25°C
1.2
1.2
1.0
1.0
0.8
0.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
IC/IB = 10
0.4
VBE(sat) @ IC/IB = 10
0.8
VBE @ VCE = 1.0 V
0.6
IC/IB = 10
0.4
5.0
5.0
0.2
0.2
VCE(sat)
0
0.04 0.06
0.1
VCE(sat)
0.2
0.4 0.6
1.0
2.0
0
0.04 0.06
4.0
0.1
IC, COLLECTOR CURRENT (AMP)
0.2
0.4
0.6
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
4.0
-1.0
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
Figure 5. “On” Voltages
25°C to 150°C
-1.5
-2.0
qVB FOR VBE
-2.5
0.04 0.06
0.1
-55°C to 25°C
0.2
0.4 0.6
1.0
IC, COLLECTOR CURRENT (AMP)
2.0
+2.5
+2.0
*APPLIES FOR IC/IB ≤ hFE/3
+1.5
+1.0
+0.5
25°C to 150°C
*qVC FOR VCE(sat)
0
-55°C to 25°C
-0.5
-1.0
-1.5
25°C to 150°C
qVB FOR VBE
-2.5
0.04 0.06
4.0
-55°C to 25°C
-2.0
0.1
0.2
0.4
0.6
1.0
IC, COLLECTOR CURRENT (AMP)
Figure 6. Temperature Coefficients
www.onsemi.com
4
2.0
4.0
MJD243 (NPN), MJD253 (PNP)
VCC
+30 V
1K
RC
25 ms
+11 V
SCOPE
RB
t, TIME (ns)
D1
51
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
tr
100
0
-9.0 V
500
300
200
-4 V
50
30
20
td
10
5
3
2
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES
1
0.01
NPN MJD243
PNP MJD253
0.02 0.03 0.05 0.1
1
2
0.2 0.3 0.5
IC, COLLECTOR CURRENT (AMPS)
10K
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
TJ = 25°C
100
C, CAPACITANCE (pF)
ts
1K
500
300
200
100
Cib
70
50
30
Cob
20
tf
MJD243 (NPN)
MJD253 (PNP)
NPN MJD243
PNP MJD253
0.2 0.3 0.5
1
2
0.02 0.03 0.05 0.1
IC, COLLECTOR CURRENT (AMPS)
3
5
10
1.0
10
2.0
3.0
5.0 7.0 10
20 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Turn−Off Time
Figure 10. Capacitance
200
TJ = 25°C
100
C, CAPACITANCE (pF)
t, TIME (ns)
5
200
5K
3K
2K
10
0.01
3
Figure 8. Turn−On Time
Figure 7. Switching Time Test Circuit
50
30
20
VCC = 30 V
IC/IB = 10
TJ = 25°C
Cib
70
50
30
20
10
Cob
1
2
3
5
7 10
20 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
www.onsemi.com
5
50
70 100
50 70 100
MJD243 (NPN), MJD253 (PNP)
ORDERING INFORMATION
Package Type
Package
Shipping†
MJD243G
DPAK−3
(Pb−Free)
369C
75 Units / Rail
MJD243T4G
DPAK−3
(Pb−Free)
369C
2,500 / Tape & Reel
NJVMJD243T4G*
DPAK−3
(Pb−Free)
369C
2,500 / Tape & Reel
MJD253−1G
IPAK
(Pb−Free)
369D
75 Units / Rail
MJD253T4G
DPAK−3
(Pb−Free)
369C
2,500 / Tape & Reel
NJVMJD253T4G*
DPAK−3
(Pb−Free)
369C
2,500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
www.onsemi.com
6
MJD243 (NPN), MJD253 (PNP)
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
A
E
C
A
b3
B
c2
4
L3
Z
D
1
2
H
DETAIL A
3
L4
NOTE 7
c
SIDE VIEW
b2
e
b
TOP VIEW
0.005 (0.13)
M
C
Z
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
BOTTOM VIEW
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
ROTATED 905 CW
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
7
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
MJD243 (NPN), MJD253 (PNP)
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
3 PL
0.13 (0.005)
M
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
T
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
◊
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
8
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MJD243/D