Order this document by MJ10005/D SEMICONDUCTOR TECHNICAL DATA $% "! "($ $!&"! $!%%&"$ (& % &&$ #'# " *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS The MJ10005 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: • • • • • Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits CASE 1–07 TO–204AA (TO–3) Fast Turn–Off Times 40 ns Inductive Fall Time — 25_C (Typ) 650 ns Inductive Storage Time — 25_C (Typ) Operating Temperature Range –65 to + 200_C 100_C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents ≈ 100 ≈ 15 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 400 Vdc Collector–Emitter Voltage VCEX 450 Vdc Collector–Emitter Voltage VCEV 500 Vdc Emitter Base Voltage VEB 8.0 Vdc Collector Current — Continuous — Peak (1) IC ICM 20 30 Adc Base Current — Continuous — Peak (1) IB IBM 2.5 5.0 Adc Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C PD 175 100 1.0 Watts TJ, Tstg – 65 to + 200 _C Symbol Max Unit RθJC 1.0 _C/W TL 275 _C Operating and Storage Junction Temperature Range W/_C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MJ10005 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted). Characteristic Symbol Min Typ Max Unit Collector–Emitter Sustaining Voltage (Table 1) (IC = 250 mA, IB = 0, Vclamp = Rated VCEO) VCEO(sus) 400 — — Vdc Collector Emitter Sustaining Voltage (Table 1, Figure 12) (IC = 2.0 A, Vclamp = Rated VCEX, TC = 100_C) (IC = 10 A, Vclamp = Rated VCEX, TC = 100_C) VCEX(sus) 450 325 — — — — — — — — 0.25 5.0 OFF CHARACTERISTICS Vdc Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C) ICEV mAdc Collector Cutoff Current (VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C) ICER — — 5.0 mAdc Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) IEBO — — 175 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased IS/b See Figure 11 ON CHARACTERISTICS (2) DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) (IC = 10 Adc, VCE = 5.0 Vdc) hFE — 50 40 — — 600 400 — — — — — — 1.9 3.0 2.0 — — — — 2.5 2.5 Vf — 3.0 5.0 Vdc Small–Signal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) hfe 10 — — — Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz) Cob 100 — 325 pF td — 0.12 0.2 µs Collector Emitter Saturation Voltage (IC = 10 Adc, IB = 400 mAdc) (IC = 20 Adc, IB = 2.0 Adc) (IC = 10 Adc, IB = 400 mAdc, TC = 100_C) VCE(sat) Base Emitter Saturation Voltage (IC = 10 Adc, IB = 400 mAdc) (IC = 10 Adc, IB = 400 mAdc, TC = 100_C) VBE(sat) Diode Forward Voltage (1) (IF = 10 Adc) Vdc Vdc DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time tr — 0.2 0.6 µs ts — 0.6 1.5 µs tf — 0.15 0.5 µs (IC = 10 A(pk), Vclamp = Rated VCEX, IB1 = 400 mA, VBE(off) = 5.0 Vdc, TC = 100_C) tsv — 1.0 2.5 µs tc — 0.4 1.5 µs (IC = 10 A(pk), Vclamp = Rated VCEX, IB1 = 400 mA, VBE(off) = 5.0 Vdc, TC = 25_C) tsv — 0.65 — µs tc — 0.2 — µs (VCC = 250 Vdc, IC = 10 A, IB1 = 400 mA, VBE(off) = 5.0 Vdc, tp = 50 µs, 2%). Duty Cycle Fall Time Inductive Load Clamped (Table 1) Storage Time Crossover Time Storage Time Crossover Time (1) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads. (1) Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers. (2) Pulse Test: PW = 300 µs, Duty Cycle 2%. v 2 Motorola Bipolar Power Transistor Device Data MJ10005 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS 500 TJ = 150°C 300 hFE, DC CURRENT GAIN 200 25°C 100 70 50 – 55°C 30 20 10 7 5 0.2 0.3 VCE = 5 V 2 3 0.5 0.7 1 5 7 IC, COLLECTOR CURRENT (AMP) 10 20 3 TJ = 25°C 2.6 10 A 15 A 1.4 1 0.02 0.03 0.2 0.3 0.5 0.7 0.05 0.07 0.1 IB, BASE CURRENT (AMP) 2 2.8 IC/IB = 10 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 3 V 2.4 V, VOLTAGE (VOLTS) 2 1.6 TJ = – 55°C 1.2 25°C 0.8 TJ = – 55°C 2 25°C 1.6 25°C 1.2 150°C 150°C 0.2 0.3 0.5 0.7 1 2 5 3 7 IC, COLLECTOR CURRENT (AMP) 0.8 0.2 0.3 20 10 0.5 0.7 1 2 3 5 7 IC, COLLECTOR CURRENT (AMP) Figure 3. Collector–Emitter Saturation Voltage Cob , OUTPUT CAPACITANCE (pF) 103 TJ = 125°C 100°C 101 100 75°C REVERSE FORWARD 25°C 10–1 – 0.2 20 1000 VCE = 250 V 102 10 Figure 4. Base–Emitter Voltage 104 IC, COLLECTOR CURRENT ( µA) 1 Figure 2. Collector Saturation Region 2.4 0.4 20 A 1.8 Figure 1. DC Current Gain V, VOLTAGE (VOLTS) IC = 5 A 2.2 0 TJ = 25°C 700 500 300 200 100 Cob 70 + 0.2 + 0.4 + 0.6 + 0.8 50 0.4 0.6 1 2 4 6 10 20 40 60 100 VBE, BASE-EMITTER VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Collector Cutoff Region Figure 6. Output Capacitance Motorola Bipolar Power Transistor Device Data 200 400 3 MJ10005 Table 1. Test Conditions for Dynamic Performance VCEO(sus) VCEX(sus) AND INDUCTIVE SWITCHING RESISTIVE SWITCHING INDUCTIVE TEST CIRCUIT 1 20 INPUT CONDITIONS TUT 1 0 INPUT 2 SEE ABOVE FOR DETAILED CONDITIONS CIRCUIT VALUES PW Varied to Attain IC = 250 mA Lcoil = 180 µH Rcoil = 0.05 Ω VCC = 20 V TEST CIRCUITS t1 t1 Adjusted to Obtain IC t1 ≈ tf CLAMPED t VCC RS = 0.1 Ω 2 [ t2 IC(pk) Lcoil Vclamp VCC = 250 V RL = 25 Ω Pulse Width = 50 µs RESISTIVE TEST CIRCUIT tf UNCLAMPED Rcoil 1N4937 OR EQUIVALENT SEE ABOVE FOR DETAILED CONDITIONS VCC RS = 0.1 Ω Vclamp = Rated VCEX Value IC TUT INPUT Lcoil OUTPUT WAVEFORMS INDUCTIVE TEST CIRCUIT 1 Vclamp 2 Lcoil = 10 mH, VCC = 10 V Rcoil = 0.7 Ω Vclamp = VCEO(sus) Rcoil 1N4937 OR EQUIVALENT t2 ≈ tf VCE Lcoil (IC pk TUT ) 1 VCC Lcoil (IC 2 pk ) RL VCC VClamp Test Equipment Scope — Tektronix 475 or Equivalent VCE or Vclamp t TIME t2 SWITCHING TIMES NOTE IC 90% IC 90% Vclamp trv tsv tfi Vclamp tti tc Vclamp 10% Vclamp 90% IB1 10% IC 2% IC IB TIME Figure 7. Inductive Switching Measurements 4 In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10 – 90% Vclamp tfi = Current Fall Time, 90 – 10% IC tti = Current Tail, 10 – 2% IC tc = Crossover Time, 10% Vclamp to 10% IC An enlarged portion of the turn–off waveforms is shown in Figure 7 to aid in the visual identity of these terms. Motorola Bipolar Power Transistor Device Data MJ10005 ] SWITCHING TIMES NOTE (continued) For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN–222. PSWT = l/2 VCC IC (tc) f In general, t rv + t fi t c. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25_C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C. RESISTIVE SWITCHING PERFORMANCE 3 1 VCC = 250 V IC/IB = 25 TJ = 25°C 2 0.5 0.7 0.5 t, TIME ( µs) t, TIME ( µs) 1 VBE(off) = 5 V VCC = 250 V IC/IB = 25 TJ = 25°C 0.7 td 0.3 ts 0.3 0.2 tr tf 0.1 0.2 0.07 0.1 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) 20 0.05 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 8. Turn–On Time 1.0 0.7 0.5 0.3 20 Figure 9. Turn–Off Time D = 0.5 0.2 0.2 0.1 0.1 0.07 0.05 P(pk) ZθJC (t) = r(t) RθJC RθJC = 1.0°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) – TC = P(pk) ZθJC(t) DUTY CYCLE, D = t1/t2 0.05 0.02 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 100 200 500 1.0 k Figure 10. Thermal Response Motorola Bipolar Power Transistor Device Data 5 MJ10005 The Safe Operating Area figures shown in Figures 11 and 12 are specified ratings for these devices under the test conditions shown. IC, COLLECTOR CURRENT (AMPS) 50 10 µs 100 µs 20 10 5 1 ms TC = 25°C 5 ms 2 1 0.5 dc 0.2 0.1 0.05 0.02 0.01 0.005 BONDING WIRE LIMITED THERMALLY LIMITED SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO MJ10005 4 6 100 200 10 20 40 60 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 350 400 SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 11 may be found at any case temperature by using the appropriate curve on Figure 13. TJ(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 11. Forward Bias Safe Operating Area REVERSE BIAS IC, COLLECTOR CURRENT (AMP) 20 TURN OFF LOAD LINE BOUNDARY FOR MJ10005. THE LOCUS FOR MJ10004 IS 50 V LESS 16 12 TJ v 100°C VBE(off) = 5 V VBE(off) = 2 V 8 VBE(off) = 0 V 4 0 0 100 200 300 400 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as V CEX(sus) at a given collector current and represents a voltage–current condition that can be sustained during reverse biased turn–off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 12 gives the complete reverse bias safe operating area characteristics. 500 Figure 12. Reverse Bias Switching Safe Operating Area POWER DERATING FACTOR (%) 100 SECOND BREAKDOWN DERATING 80 60 THERMAL DERATING 40 20 0 0 40 160 80 120 TC, CASE TEMPERATURE (°C) 200 Figure 13. Power Derating 6 Motorola Bipolar Power Transistor Device Data MJ10005 PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO–204AA OUTLINE SHALL APPLY. C –T– E D K 2 PL 0.13 (0.005) U T Q M M Y M –Y– L V SEATING PLANE 2 H G B M T Y 1 –Q– 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF ––– 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC ––– 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF ––– 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC ––– 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1–07 TO–204AA (TO–3) ISSUE Z Motorola Bipolar Power Transistor Device Data 7 MJ10005 Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 8 ◊ Motorola Bipolar Power Transistor Device Data *MJ10005/D* MJ10005/D