Order this document by MJE13009/D SEMICONDUCTOR TECHNICAL DATA *Motorola Preferred Device ! The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFICATION FEATURES: 12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS • VCEO(sus) 400 V and 300 V • Reverse Bias SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C . . . tc @ 8 A, 100_C is 120 ns (Typ). • 700 V Blocking Capability • SOA and Switching Applications Information. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v CASE 221A–06 TO–220AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO(sus) 400 Vdc Collector–Emitter Voltage VCEV 700 Vdc Emitter Base Voltage VEBO 9 Vdc Collector Current — Continuous — Peak (1) IC ICM 12 24 Adc Base Current — Continuous — Peak (1) IB IBM 6 12 Adc Emitter Current — Continuous — Peak (1) IE IEM 18 36 Adc Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2 16 Watts mW/_C Total Power Dissipation @ TC = 25_C Derate above 25_C PD 100 800 Watts mW/_C TJ, Tstg – 65 to + 150 _C Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 62.5 _C/W Thermal Resistance, Junction to Case RθJC 1.25 _C/W TL 275 _C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. REV 2 3–676 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MJE13009 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 400 — — Vdc — — — — 1 5 — — 1 *OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 10 mA, IB = 0) Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) ICEV Emitter Cutoff Current (VEB = 9 Vdc, IC = 0) IEBO mAdc mAdc SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased Clamped Inductive SOA with Base Reverse Biased IS/b — See Figure 1 See Figure 2 *ON CHARACTERISTICS DC Current Gain (IC = 5 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) hFE 8 6 — — 40 30 — — — — — — — — 1 1.5 3 2 — — — — — — 1.2 1.6 1.5 fT 4 — — MHz Cob — 180 — pF td — 0.06 0.1 µs tr — 0.45 1 µs ts — 1.3 3 µs tf — 0.2 0.7 µs tsv — 0.92 2.3 µs tc — 0.12 0.7 µs Collector–Emitter Saturation Voltage (IC = 5 Adc, IB = 1 Adc) (IC = 8 Adc, IB = 1.6 Adc) (IC = 12 Adc, IB = 3 Adc) (IC = 8 Adc, IB = 1.6 Adc, TC = 100_C) VCE(sat) Base–Emitter Saturation Voltage (IC = 5 Adc, IB = 1 Adc) (IC = 8 Adc, IB = 1.6 Adc) (IC = 8 Adc, IB = 1.6 Adc, TC = 100_C) VBE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time (VCC = 125 Vdc, IC = 8 A, IB1 = IB2 = 1.6 A, tp = 25 µs, Duty Cycle 1%) Fall Time Inductive Load, Clamped (Table 1, Figure 13) Voltage Storage Time Crossover Time (IC = 8 A, Vclamp = 300 Vdc, IB1 = 1.6 A, VBE(off) = 5 Vdc, TC = 100_C) *Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%. Motorola Bipolar Power Transistor Device Data 3–677 MJE13009 14 10 µs 20 10 5 12 100 µs IC, COLLECTOR (AMP) IC, COLLECTOR CURRENT (AMP) 100 50 1 ms 2 1 0.5 TC = 25°C dc THERMAL LIMIT BONDING WIRE LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 0.2 0.1 0.05 10 TC ≤ 100°C IB1 = 2.5 A 8 6 VBE(off) = 9 V 4 5V 2 0.02 0.01 3V 0 5 20 30 200 300 10 50 70 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 7 0 500 100 200 300 400 1.5 V 500 700 600 800 VCEV, COLLECTOR–EMITTER CLAMP VOLTAGE (VOLTS) Figure 1. Forward Bias Safe Operating Area Figure 2. Reverse Bias Switching Safe Operating Area The Safe Operating Area figures shown in Figures 1 and 2 are specified ratings for these devices under the test conditions shown. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 1 may be found at any case temperature by using the appropriate curve on Figure 3. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Use of reverse biased safe operating area data (Figure 2) is discussed in the applications information section. POWER DERATING FACTOR 1 SECOND BREAKDOWN DERATING 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 60 40 80 100 120 140 160 TC, CASE TEMPERATURE (°C) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 3. Forward Bias Power Derating 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 P(pk) ZθJC(t) = r(t) RθJC RθJC = 1.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) ZθJC(t) 0.05 0.2 0.5 1 2 5 10 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 t, TIME (ms) Figure 4. Typical Thermal Response [ZθJC(t)] 3–678 Motorola Bipolar Power Transistor Device Data 1.0 k hFE , DC CURRENT GAIN 50 30 TJ = 150°C 25°C 20 – 55°C 10 7 5 0.2 VCE = 5 V 0.3 3 0.5 0.7 1 5 7 2 IC, COLLECTOR CURRENT (AMP) 10 20 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) MJE13009 2 1.6 5A 8A 12 A 0.8 0.4 TJ = 25°C 0 0.05 0.07 0.1 Figure 5. DC Current Gain 0.2 0.3 0.5 0.7 1 IB, BASE CURRENT (AMP) 2 3 5 Figure 6. Collector Saturation Region 0.7 1.4 0.6 IC/IB = 3 V, VOLTAGE (VOLTS) IC/IB = 3 1.2 V, VOLTAGE (VOLTS) 3A IC = 1 A 1.2 TJ = – 55°C 1 0.8 25°C 150°C TJ = 150°C 0.5 0.4 0.3 – 55°C 0.2 25°C 0.6 0.1 0.4 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0 0.2 0.3 20 1 2 3 5 7 10 20 IC, COLLECTOR CURRENT (AMP) Figure 7. Base–Emitter Saturation Voltage Figure 8. Collector–Emitter Saturation Voltage 10K 4K VCE = 250 V 2K Cib 1K C, CAPACITANCE (pF) IC, COLLECTOR CURRENT ( µ A) 0.5 0.7 IC, COLLECTOR CURRENT (AMP) TJ = 150°C 100 125°C 100°C 10 75°C 50°C 1 25°C 0.1 – 0.4 REVERSE FORWARD + 0.2 + 0.4 0 – 0.2 VBE, BASE–EMITTER VOLTAGE (VOLTS) Figure 9. Collector Cutoff Region Motorola Bipolar Power Transistor Device Data + 0.6 TJ = 25°C 1K 800 600 400 200 100 80 60 40 0.1 Cob 100 0.2 0.5 1 2 5 10 20 50 VR, REVERSE VOLTAGE (VOLTS) 200 500 Figure 10. Capacitance 3–679 MJE13009 Table 1. Test Conditions for Dynamic Performance RESISTIVE SWITCHING REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING +5 V 1N4933 VCC 33 +125 V MJE210 TEST CIRCUITS 0.001 µF L 33 1N4933 RC 5V 2N2222 PW 1k DUTY CYCLE ≤ 10% tr, tf ≤ 10 ns MR826* IC RB 68 1k +5 V 5.1 k IB TUT Vclamp *SELECTED FOR ≥ 1 kV D1 VCE 51 1N4933 1k D.U.T. – 4.0 V 2N2905 0.02 µF 270 CIRCUIT VALUES NOTE PW and VCC Adjusted for Desired IC RB Adjusted for Desired IB1 TEST WAVEFORMS SCOPE RB Coil Data: Ferroxcube Core #6656 Full Bobbin (~16 Turns) #16 IC ICM t1 VCE 47 100 1/2 W – VBE(off) GAP for 200 µH/20 A Lcoil = 200 µH OUTPUT WAVEFORMS tf CLAMPED tf UNCLAMPED ≈ t2 t1 ADJUSTED TO OBTAIN IC t L (I ) tf t1 ≈ coil CM VCC VCEM TIME MJE200 Vclamp t2 ≈ t2 Lcoil (ICM) Vclamp VCC = 125 V RC = 15 Ω D1 = 1N5820 or Equiv. RB = Ω VCC = 20 V Vclamp = 300 Vdc 25 µs +10 V 0 Test Equipment Scope–Tektronics 475 or Equivalent –8 V tr, tf < 10 ns Duty Cycle = 1.0% RB and RC adjusted for desired IB and IC APPLICATIONS INFORMATION FOR SWITCHMODE SPECIFICATIONS INTRODUCTION The primary considerations when selecting a power transistor for SWITCHMODE applications are voltage and current ratings, switching speed, and energy handling capability. In this section, these specifications will be discussed and related to the circuit examples illustrated in Table 2.(1) VOLTAGE REQUIREMENTS Both blocking voltage and sustaining voltage are important in SWITCHMODE applications. Circuits B and C in Table 2 illustrate applications that require high blocking voltage capability. In both circuits the switching transistor is subjected to voltages substantially higher than V CC after the device is completely off (see load line diagrams at IC = Ileakage ≈ 0 in Table 2). The blocking capability at this point depends on the base to emitter conditions and the device junction temperature. Since the highest device capability occurs when the base to emitter junction is reverse biased (V CEV), this is the recommended and specified use condition. Maximum I CEV at rated V CEV is specified at a relatively low reverse bias (1.5 Volts) both at 25°C and 3–680 100_C. Increasing the reverse bias will give some improvement in device blocking capability. The sustaining or active region voltage requirements in switching applications occur during turn–on and turn–off. If the load contains a significant capacitive component, high current and voltage can exist simultaneously during turn–on and the pulsed forward bias SOA curves (Figure 1) are the proper design limits. For inductive loads, high voltage and current must be sustained simultaneously during turn–off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as a Reverse Bias Safe Operating Area (Figure 2) which represents voltage–current conditions that can be sustained during reverse biased turn–off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. (1) For detailed information on specific switching applications, see Motorola Application Notes AN–719, AN–767. Motorola Bipolar Power Transistor Device Data MJE13009 VOLTAGE REQUIREMENTS (continued) In the four application examples (Table 2) load lines are shown in relation to the pulsed forward and reverse biased SOA curves. In circuits A and D, inductive reactance is clamped by the diodes shown. In circuits B and C the voltage is clamped by the output rectifiers, however, the voltage induced in the primary leakage inductance is not clamped by these diodes and could be large enough to destroy the device. A snubber network or an additional clamp may be required to keep the turn–off load line within the Reverse Bias SOA curve. Load lines that fall within the pulsed forward biased SOA curve during turn–on and within the reverse bias SOA curve during turn–off are considered safe, with the following assumptions: (1) The device thermal limitations are not exceeded. (2) The turn–on time does not exceed 10 µs (see standard pulsed forward SOA curves in Figure 1). (3) The base drive conditions are within the specified limits shown on the Reverse Bias SOA curve (Figure 2). CURRENT REQUIREMENTS An efficient switching transistor must operate at the required current level with good fall time, high energy handling capability and low saturation voltage. On this data sheet, these parameters have been specified at 8 amperes which represents typical design conditions for these devices. The current drive requirements are usually dictated by the V CE(sat) specification because the maximum saturation voltage is specified at a forced gain condition which must be duplicated or exceeded in the application to control the saturation voltage. SWITCHING REQUIREMENTS In many switching applications, a major portion of the transistor power dissipation occurs during the fall time (t fi ). For this reason considerable effort is usually devoted to reducing the fall time. The recommended way to accomplish this is to reverse bias the base–emitter junction during turn–off. The reverse biased switching characteristics for inductive loads are discussed in Figure 11 and Table 3 and resistive loads in Figures 13 and 14. Usually the inductive load component will be the dominant factor in SWITCHMODE applications and the inductive switching data will more closely represent the device performance in actual application. The inductive switching characteristics are derived from the same circuit used to specify the reverse biased SOA curves, (See Table 1) providing correlation between test procedures and actual use conditions. RESISTIVE SWITCHING PERFORMANCE 1K 2K ts VCC = 125 V IC/IB = 5 TJ = 25°C 700 500 1K 200 t, TIME (ns) tr VCC = 125 V IC/IB = 5 TJ = 25°C 500 300 200 100 td @ VBE(off) = 5 V 70 tf 50 0.2 0.3 2 3 5 7 0.5 0.7 1 IC, COLLECTOR CURRENT (AMP) 10 20 100 Figure 11. Turn–On Time 90% IB1 tfi 10% VCEM 10 20 IC Vclamp VCE tti tc Vclamp IB 90% IC trv 0.5 0.7 1 2 5 7 IC, COLLECTOR CURRENT (AMP) 10% ICM 2% IC CURRENT 2 A/DIV tsv 0.3 Figure 12. Turn–Off Time IC 90% VCEM 0.2 VOLTAGE 50 V/DIV t, TIME (ns) 700 300 IC VCE TIME Figure 13. Inductive Switching Measurements Motorola Bipolar Power Transistor Device Data TIME 20 ns/DIV Figure 14. Typical Inductive Switching Waveforms (at 300 V and 12 A with IB1 = 2.4 A and VBE(off) = 5 V) 3–681 MJE13009 Table 2. Applications Examples of Switching Circuits CIRCUIT LOAD LINE DIAGRAMS SERIES SWITCHING REGULATOR Collector Current A VCC TURN–ON (FORWARD BIAS) SOA ton ≤ 10 ms DUTY CYCLE ≤ 10% PD = 4000 W 2 24 A VO TC = 100°C TURN–OFF (REVERSE BIAS) SOA 1.5 V ≤ VBE(off) ≤ 9.0 V DUTY CYCLE ≤ 10% VO N B t VCC 1 t TIME TURN–ON (FORWARD BIAS) SOA TURN–ON ton ≤ 10 ms TURN–ON DUTY CYCLE ≤ 10% PD = 4000 W 2 TC = 100°C 350 V 12 A TURN–OFF (REVERSE BIAS) SOA TURN–OFF 1.5 V ≤ VBE(off) ≤ 9.0 V TURN–OFF TURN–OFF DUTY CYCLE ≤ 10% TURN–ON VCC TIME VCE TURN–OFF 24 A Collector Current VCC IC 350 V 12 A TURN–ON VCC 400 V 1 700 V COLLECTOR VOLTAGE RINGING CHOKE INVERTER TIME DIAGRAMS 400 V 700 V 1 IC toff ton VCE VCC+ N(Vo) t LEAKAGE SPIKE VCC 1 t VCC + N(Vo) COLLECTOR VOLTAGE PUSH–PULL INVERTER/CONVERTER TURN–ON (FORWARD BIAS) SOA TURN–ON ton ≤ 10 ms TURN–ON DUTY CYCLE ≤ 10% PD = 4000 W 2 TC = 100°C 350 V TURN–OFF (REVERSE BIAS) SOA 12 A TURN–ON TURN–OFF 1.5 V ≤ VBE(off) ≤ 9.0 V TURN–OFF DUTY CYCLE ≤ 10% VO C VCC Collector Current 24 A TURN–OFF IC ton t VCE 2 VCC VCC 2 VCC VCC 400 V 1 toff 700 V 1 t COLLECTOR VOLTAGE SOLENOID DRIVER TURN–ON (FORWARD BIAS) SOA TURN–ON ton ≤ 10 ms TURN–ON DUTY CYCLE ≤ 10% VCC SOLENOID D Collector Current 24 A PD = 4000 W 2 350 V TURN–OFF (REVERSE BIAS) SOA TURN–OFF 1.5 V ≤ VBE(off) ≤ 9.0 V TURN–OFF DUTY CYCLE ≤ 10% TURN–OFF TC = 100°C 12 A ton toff t VCE VCC TURN–ON VCC 400 V 1 700 V COLLECTOR VOLTAGE 3–682 IC 1 t Motorola Bipolar Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MJE13009 Table 3. Typical Inductive Switching Performance IC AMP TC _C tsv ns trv ns tfi ns tti ns tc ns 3 25 100 770 1000 100 230 150 160 200 200 240 320 5 25 100 630 820 72 100 26 55 10 30 100 180 8 25 100 720 920 55 70 27 50 2 8 77 120 12 25 100 640 800 20 32 17 24 2 4 41 54 NOTE: All Data recorded In the Inductive Switching Circuit In Table 1. SWITCHING TIME NOTES In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% VCEM trv = Voltage Rise Time, 10 – 90% VCEM tfi = Current Fall Time, 90 – 10% ICM tti = Current Tail, 10 – 2% ICM tc = Crossover Time, 10% VCEM to 10% ICM An enlarged portion of the turn–off waveforms is shown in Figure 13 to aid in the visual identity of these terms. Motorola Bipolar Power Transistor Device Data For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN–222: PSWT = 1/2 VCCIC(tc) f Typical inductive switching waveforms are shown in Figure 14. In general, t rv + t fi t c. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25_C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C. ] 3–683 MJE13009 PACKAGE DIMENSIONS –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A–06 TO–220AB ISSUE Y 3–684 Motorola Bipolar Power Transistor Device Data MJE13009 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 Motorola Bipolar Power Transistor ◊ Device Data *MJE13009/D* 3–685 MJE13009/D