Diodes DMMT3906W 40v matched pair pnp small signal transistor in sot363 Datasheet

DMMT3906W
40V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT363
Features
Mechanical Data
•
BVCEO > -40V
•
•
IC = -200mA High Collector Current
•
•
•
Pair of PNP Transistors That Are Intrinsically Matched (Note 1)
2% Matching on Current Gain (hFE)
•
Moisture Sensitivity: Level 1 per J-STD-020
•
2mV Matching on Base-Emitter Voltage (VBE)
•
•
Fully Internally Isolated in a Small Surface Mount Package
Terminals: Finish ⎯ Matte Tin Finish. Solderable per
MIL-STD-202, Method 208 e3
•
Totally Lead-Free & Fully RoHS Compliant (Notes 2 & 3)
•
Weight: 0.006 grams (approximate)
•
Halogen and Antimony Free. "Green" Device (Note 4)
•
Qualified to AEC-Q101 Standards for High Reliability
•
PPAP Capable (Note 5)
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
•
Current Mirrors
•
Differential and Instrumentation Amplifiers
•
Comparators
2
E
1
E
2
B
1
B
1
C
Top View
2
C
SOT363
Device Schematic and Pin-Out
Top View
Ordering Information (Note 4 & 5)
Part Number
DMMT3906W-7-F
DMMT3906WQ-7-F
Notes:
Compliance
AEC-Q101
Automotive
Marking
K4B
K4B
Reel Size (inches)
7
7
Tape Width (mm)
8
8
Quantity per Reel
3,000
3,000
1. Intrinsically matched pair as this is built with adjacent die from the same wafer.
2. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
4. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
6. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
K4B = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 2 = February)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
2011
Y
Feb
2
DMMT3906W
Document number: DS30312 Rev. 12 - 2
2012
Z
Mar
3
Apr
4
2013
A
May
5
2014
B
Jun
6
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Jul
7
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov
N
Dec
D
May 2014
© Diodes Incorporated
DMMT3906W
Absolute Maximum Ratings (@TA = +25°C unless otherwise specified.)
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5.0
V
IC
-200
mA
Symbol
Value
Unit
PD
200
mW
RθJA
625
°C/W
TJ, TSTG
-65 to +150
°C
Collector Current
Thermal Characteristics – Total Device (@TA = +25°C unless otherwise specified.)
Characteristic
Power Dissipation (Note 7) Total Device
Thermal Resistance, Junction to Ambient (Note 7)
Operating and Storage Temperature Range
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Note:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
7. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB; the device is measured
under still air conditions whilst operating in a steady-state.
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics – Total Device
DMMT3906W
Document number: DS30312 Rev. 12 - 2
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Electrical Characteristics (@TA = +25°C unless otherwise specified)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
TYP
Max
Unit
Collector-Base Breakdown Voltage
BVCBO
-40
⎯
⎯
V
IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
-40
⎯
⎯
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
BVEBO
-5.0
⎯
⎯
V
IE = -100μA, IC = 0
ICEX
⎯
⎯
-50
nA
VCE = -30V, VEB(OFF) = 3.0V
IBL
⎯
⎯
-50
nA
VCE = -30V, VEB(OFF) = 3.0V
hFE
60
80
100
60
30
⎯
⎯
⎯
300
⎯
⎯
⎯
IC = -100µA,
IC = -1.0mA,
IC = -10mA,
IC = -50mA,
IC = -100mA,
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
-250
-400
mV
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.65
⎯
⎯
-850
-950
mV
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
hFE1 / hFE2
⎯
1
2
%
IC = -2mA, VCE = -5V
VBE1 VBE2
⎯
1
2
mV
IC = -2mA, VCE = -5V
Collector-Emitter Saturation Voltage (Note 10)
VCE(SAT)1 /
VCE(SAT)2
⎯
1
2
%
IC = -10mA, IB = -1.0mA
Base-Emitter Saturation Voltage (Note 10)
VBE(SAT)1 /
VBE(SAT)2
⎯
1
2
%
IC = -10mA, IB = -1.0mA
Output Capacitance
Cobo
⎯
⎯
4.5
pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
⎯
⎯
10.0
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
2.0
⎯
12
kΩ
Voltage Feedback Ratio
hre
0.1
⎯
10
x 10
Small Signal Current Gain
hfe
100
⎯
400
⎯
Output Admittance
hoe
3.0
⎯
60
μS
fT
250
⎯
⎯
MHz
VCE = -20V, IC = -10mA,
f = 100MHz
NF
⎯
⎯
4.0
dB
VCE = -5.0V, IC = -100μA,
RS = 1.0kΩ, f = 1.0kHz
Delay Time
td
⎯
⎯
35
ns
Rise Time
tr
⎯
⎯
35
ns
Storage Time
ts
⎯
⎯
225
ns
Fall Time
tf
⎯
⎯
75
ns
Collector Cutoff Current
Base Cutoff Current
Test Condition
ON CHARACTERISTICS (Note 9)
DC Current Gain
⎯
VCE = -1.0V
VCE = -1.0V
VCE = -1.0V
VCE = - 1.0V
VCE = -1.0V
MATCHING CHARACTERISTICS
DC Current Gain Matching (Note 10)
Base-Emitter Voltage Matching (Note 11)
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Noise Figure
-4
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
SWITCHING CHARACTERISTICS
Note:
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
10. Is the ratio of one transistor compared to the other transistor.
11. VBE1 - VBE2 is the absolute difference of one transistor compared to the other transistor.
DMMT3906W
Document number: DS30312 Rev. 12 - 2
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DMMT3906W
Typical Electrical Characteristics (@TA = +25°C unless otherwise specified.)
DMMT3906W
Document number: DS30312 Rev. 12 - 2
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DMMT3906W
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
SOT363
Dim Min Max Typ
A 0.10 0.30 0.25
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D
0.65 Typ
F 0.40 0.45 0.425
H 1.80 2.20 2.15
J
0
0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.22 0.11
0°
8°
α
All Dimensions in mm
B C
H
K
M
J
D
L
F
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2
Z
C2
C1
G
Y
Dimensions Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C1
1.9
C2
0.65
X
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Copyright © 2014, Diodes Incorporated
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