ONSEMI MMBT2907AWT1

MMBT2907AWT1
Preferred Device
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 package which
is designed for low power surface mount applications.
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Features
• Pb−Free Package is Available
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−60
Vdc
Collector −Base Voltage
VCBO
−60
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
IC
−600
mAdc
Symbol
Max
Unit
PD
150
mW
RJA
833
°C/W
TJ, Tstg
−55 to
+150
°C
Collector Current − Continuous
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature
3
SC −70/SOT−323
CASE 419 −04
STYLE 3
1
2
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
20
1. FR−5 = 1.0 x 0.75 x 0.062 in.
20
= Specific Device Code
ORDERING INFORMATION
Device
MMBT2907AWT1
MMBT2907AWT1G
Package
Shipping†
SC−70
3000 Tape & Reel
SC−70
3000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 3
1
Publication Order Number:
MMBT2907AWT1/D
MMBT2907AWT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage (Note 2)
(IC = −10 mAdc, IB = 0)
V(BR)CEO
−60
−
Vdc
Collector −Base Breakdown Voltage
(IC = −10 mAdc, IE = 0)
V(BR)CBO
−60
−
Vdc
Emitter −Base Breakdown Voltage
(IE = −10 Adc, IC = 0)
V(BR)EBO
−5.0
−
Vdc
Base Cutoff Current
(VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
IBL
−
−50
nAdc
Collector Cutoff Current
(VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
ICEX
−
−50
nAdc
75
100
100
100
50
−
−
−
−
−
−
−
−0.4
−1.6
−
−
−1.3
−2.6
fT
200
−
MHz
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
8.0
pF
Input Capacitance
(VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
30
pF
ton
−
45
td
−
10
Rise Time
tr
−
40
Storage Time
ts
−
80
tf
−
30
toff
−
100
OFF CHARACTERISTICS
ON CHARACTERISTICS(3)
DC Current Gain (Note 2)
(IC = −0.1 mAdc, VCE = −10 Vdc)
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −150 mAdc, VCE = −10 Vdc)
(IC = −500 mAdc, VCE = −10 Vdc)
HFE
Collector −Emitter Saturation Voltage (Note 2)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage (Note 2)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −50 mAdc, VCE = 20 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Turn−On Time
Delay Time
Fall Time
(VCC = −30 Vdc,
IC = −150 mAdc, IB1 = −15 mAdc)
(VCC = −6.0 Vdc, IC = −150 mAdc,
IB1 = IB2 = 15 mAdc)
Turn−Off Time
2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
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2
ns
MMBT2907AWT1
PACKAGE DIMENSIONS
SC−70/SOT−323
CASE 419−04
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
L
3
DIM
A
B
C
D
G
H
J
K
L
N
S
B
S
1
2
D
G
0.05 (0.002)
J
N
C
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
K
H
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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3
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.032
0.040
0.012
0.016
0.047
0.055
0.000
0.004
0.004
0.010
0.017 REF
0.026 BSC
0.028 REF
0.079
0.095
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.00
0.30
0.40
1.20
1.40
0.00
0.10
0.10
0.25
0.425 REF
0.650 BSC
0.700 REF
2.00
2.40
MMBT2907AWT1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
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4
For additional information, please contact your
local Sales Representative.
MMBT2907AWT1/D