AVAGO MSA-0520 Cascadable silicon bipolar mmic amplifier Datasheet

MSA-0520
Cascadable Silicon Bipolar MMIC Amplifier
Data Sheet
Description
Features
The MSA-0520 is a high performance silicon bipolar
Monolithic Microwave Integrated Circuit (MMIC) housed
in a hermetic, BeO disk package for good thermal
characteristics. This MMIC is designed for use as a general
purpose 50Ω gain block. Typical applications include
narrow and broad band IF and RF amplifiers in industrial and military applications.
• Cascadable 50 Ω Gain Block
The MSA-series is fabricated using Avago’s 10 GHz
fT, 25 GHz fMAX, silicon bipolar MMIC process which
uses nitride self-alignment, ion implantation, and
gold ­ metallization to achieve excellent performance,
­uniformity and reliability. The use of an external bias
resistor for temperature and current stability also ­allows
bias flexibility.
• Hermetic Metal/Beryllia Microstrip Package
200 mil BeO Package
Typical Biasing Configuration
• High Output Power:
+23 dBm Typical P1 dB at 1.0 GHz
• Low Distortion:
33 dBm Typical IP3 at 1.0 GHz
• 8.5 dB Typical Gain at 1.0 GHz
R bias
VCC > 15 V
RFC (Optional)
4
C block
IN
C block
3
1
OUT
MSA
2
Vd = 12 V
MSA-0520 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current225 mA
Power Dissipation[2,3]
3.0 W
RF Input Power
+25 dBm
Junction Temperature200°C
Storage Temperature
–65 to 200°C
Thermal Resistance[2,4]:
θjc = 25°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 40 mW/°C for TC > 125°C.
4. The small spot size of this technique results in a higher, though more accurate determination
of θjc than do alternate methods.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 165 mA, ZO = 50 Ω
Units
P1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm21.023.0
GP
Power Gain (|S21| 2)
f = 0.1 GHz
∆GP
Gain Flatness
f = 0.1 to 2.0 GHz
f3 dB
3 dB Bandwidth[2]
7.5
dB
Typ.
8.5
9.5
±0.75
f = 0.1 to 2.0 GHz2.0:1
Output VSWR
f = 0.1 to 2.0 GHz2.5:1
IP3
Third Order Intercept Point
f = 1.0 GHz
dBm
33.0
NF50 Ω
50 Ω Noise Figure
f = 1.0 GHz
dB
6.5
tD
Group Delay
f = 1.0 GHz
psec
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
Notes:
1. The recommended operating current range for this device is 80 to 200 mA.
Typical performance as a function of current is on the following page.
2. Referenced from 0.1 GHz Gain (GP).
Max.
GHz2.8
Input VSWR
VSWR
dB
Min.
V
10.5
mV/°C
170
12.0
–16.0
13.5
MSA-0520 Typical Scattering Parameters (TA = 25°C, Id = 165 mA)
Freq.
MHz
Mag
5
25
50
100
200
400
600
800
1000
1500
2000
2500
3000
3500
4000
.57
.25
.15
.11
.10
.10
.11
.13
.15
.22
.30
.37
.41
.45
.46
S11
Ang
dB
S21
Mag
Ang
dB
S12
Mag
Ang
Mag
–38
–90
–111
–138
–152
–152
–147
–142
–140
–142
–156
–170
170
149
124
14.4
5.25
10.7
3.42
9.52.97
8.92.80
8.82.75
8.72.72
8.62.70
8.52.67
8.42.64
8.02.52
7.42.36
6.72.16
5.6
1.91
4.5
1.68
3.3
1.45
165
160
163
166
163
152
140
128
115
85
55
33
8
–16
–40
–19.4
–14.9
–14.4
–14.2
–14.1
–14.1
–14.0
–14.1
–14.1
–13.7
–13.3
–12.9
–12.7
–12.1
–11.7
.107
.180
.190
.195
.197
.198
.199
.199
.198
.206
.216
.227
.232
.249
.259
38
17
9
3
1
–2
–4
–6
–8
–12
–16
–18
–23
–31
–39
.67
.29
.18
.11
.10
.14
.18
.22
.27
.34
.43
.48
.51
.55
.56
S22
Ang
k
–35
–81
–97
–113
–125
–123
–123
–127
–131
–143
–158
–166
–177
173
162
0.57
0.93
1.10
1.16
1.17
1.16
1.14
1.12
1.09
0.98
0.85
0.75
0.70
0.63
0.66
Typical Performance, TA = 25°C
(unless otherwise noted)
8
150
6
Id (mA)
GAIN (dB)
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz 1.5 GHz
4
16
18
20
22
24
26
28
0
3
6
Figure 1. Typical Gain vs. Power Out,
TA = 25°C, Id = 165 mA.
9
12
P1 dB
20
16
80
15
120
200
Figure 3. Output Power at 1 dB Gain Compression,
Third Order Intercept vs. Current, f = 1.0 GHz.
10
26
160
Id (mA)
Figure 2. Device Current vs. Voltage.
28
4
8
3
0.5 GHz
Output
6
VSWR
1.0 GHz
22
Gp (dB)
P1 dB (dBm)
28
Vd (V)
POWER OUT (dBm)
24
IP3
24
0
30
32
100
50
2
0
14
36
TC = +100C
TC = +25C
TC = –50C
IP3 (dBm)
200
P1 dB (dBm)
10
4
2
20
18
2.0 GHz
Input
1
Id = 200 mA
2
Id = 165 mA
Id = 80 mA
16
-50
+25
+100
CASE TEMPERATURE (C)
Figure 4. Output Power @ 1 dB Gain
Compression vs. Temperature,
Id = 165 mA.
0
0.1
0.2 0.3
0.5
1.0
FREQUENCY (GHz)
Figure 5. Gain vs. Frequency.
2.0
4.0
0.1
0.2 0.3
0.5
1.0
FREQUENCY, (GHz)
Figure 6. VSWR vs. Frequency,
Id = 165 mA.
2.0
4.0
Ordering Information
Part Numbers
MSA-0520
No. of Devices
100
Comments
Bulk
200 mil BeO Package Dimensions
4
GROUND
.300 ± .025
7.62 ± .64
45°
.030
.76
3
1
RF INPUT
NO REFERENCE
GROUND
2
.060
1.52
.048 ± .010
1.21 ± .25
.128
3.25
.205
5.21
RF OUTPUT
AND BIAS
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
3. Base of package is
electrically isolated.
.004 ± .002
.10 ± .05
.023
.57
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2755EN
AV02-1228EN May 14, 2008
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