Intersil HI-508A 16-channel, 8-channel, differential 8-channel and differential 4-channel, cmos analog muxs with active overvoltage protection Datasheet

HI-506A, HI-507A, HI-508A, HI-509A
Data Sheet
June 1999
File Number
3143.2
16-Channel, 8-Channel, Differential
8-Channel and Differential 4-Channel,
CMOS Analog MUXs with Active
Overvoltage Protection
Features
The HI-506A, HI-507A, HI-508A and HI-509A are analog
multiplexers with active overvoltage protection. Analog input
levels may greatly exceed either power supply without
damaging the device or disturbing the signal path of other
channels. Active protection circuitry assures that signal
fidelity is maintained even under fault conditions that would
destroy other multiplexers. Analog inputs can withstand
constant 70VP-P levels with ±15V supplies. Digital inputs will
also sustain continuous faults up to 4V greater than either
supply. In addition, signal sources are protected from short
circuiting should multiplexer supply loss occur. Each input
presents 1kΩ of resistance under this condition. These
features make the HI-506A, HI-507A, HI-508A and HI-509A
ideal for use in systems where the analog inputs originate
from external equipment, or separately powered circuitry. All
devices are fabricated with 44V dielectrically isolated CMOS
technology. The HI-506A is a single 16-Channel multiplexer,
the HI-507A is an 8-Channel differential multiplexer, the
HI-508A is a single 8-Channel multiplexer and the HI-509A is
a differential 4-Channel multiplexer. If input overvoltage
protection is not needed the HI-506/507/508/509
multiplexers are recommended. For further information see
Application Notes AN520 and AN521.
• Maximum Power Supply . . . . . . . . . . . . . . . . . . . . . . . 44V
• Analog Overvoltage . . . . . . . . . . . . . . . . . . . . . . . . 70VP-P
• No Channel Interaction During Overvoltage
• Fail Safe with Power Loss (No Latch-Up)
• Break-Before-Make Switching
• Analog Signal Range . . . . . . . . . . . . . . . . . . . . . . . . ±15V
• Access Time. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns
• Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . 7.5mW
Applications
• Data Acquisition Systems
• Industrial Controls
• Telemetry
Ordering Information
PART
NUMBER
TEMP. RANGE
(oC)
HI1-0506A-2
-55 to 125
28 Ld CERDIP
F28.6
HI1-0506A-5
0 to 75
28 Ld CERDIP
F28.6
-55 to 125
28 Ld CERDIP
+ 160 Hour Burn-In
F28.6
HI1-0506A-8
HI3-0506A-5
HI1-0507A-8
HI3-0507A-5
28 Ld PDIP
-55 to 125
28 Ld CERDIP
+ 160 Hour Burn-In
0 to 75
28 Ld PDIP
PKG.
NO.
E28.6
F28.6
E28.6
HI1-0508A-7
0 to 75
16 Ld CERDIP
+ 96 Hour Burn-In
F16.3
HI1-0508A-8
-55 to 125
16 Ld CERDIP
+ 160 Hour Burn-In
F16.3
HI3-0508A-5
+0 to 75
HI1-0509A-2
HI1-0509A-5
HI1-0509A-8
HI3-0509A-5
1
0 to 75
PACKAGE
16 Ld PDIP
E16.3
-55 to 125
16 Ld CERDIP
F16.3
0 to 75
16 Ld CERDIP
F16.3
-55 to 125
16 Ld CERDIP
+ 160 Hour Burn-In
F16.3
0 to 75
16 Ld PDIP
E16.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
HI-506A, HI-507A, HI-508A, HI-509A
Pinouts
HI-506A (CERDIP, PDIP)
TOP VIEW
28 OUT
+VSUPPLY 1
HI-507A (CERDIP, PDIP)
TOP VIEW
+VSUPPLY 1
28 OUT A
NC 2
27 -VSUPPLY
NC 3
26 IN 8
NC 3
26 IN 8A
IN 16 4
25 IN 7
IN 8B 4
25 IN 7A
IN 15 5
24 IN 6
IN 7B 5
24 IN 6A
IN 14 6
23 IN 5
IN 6B 6
23 IN 5A
IN 13 7
22 IN 4
IN 5B 7
22 IN 4A
IN 12 8
21 IN 3
IN 4B 8
21 IN 3A
IN 11 9
20 IN 2
IN 3B 9
20 IN 2A
IN 10 10
19 IN 1
IN 2B 10
19 IN 1A
18 ENABLE
IN 1B 11
18 ENABLE
IN 9 11
OUT B 2
27 -VSUPPLY
GND 12
17 ADDRESS A0
GND 12
17 ADDRESS A0
VREF 13
16 ADDRESS A1
VREF 13
16 ADDRESS A1
ADDRESS A3 14
15 ADDRESS A2
NC 14
15 ADDRESS A2
HI-508A (CERDIP, PDIP)
TOP VIEW
A0 1
16 A1
ENABLE 2
15 A2
14 GND
-VSUPPLY 3
HI-509A (CERDIP, PDIP)
TOP VIEW
A0 1
ENABLE 2
-VSUPPLY 3
16 A1
15 GND
14 +VSUPPLY
IN 1 4
13 +VSUPPLY
IN 1A 4
13 IN 1B
IN 2 5
12 IN 5
IN 2A 5
12 IN 2B
IN 3 6
11 IN 6
IN 3A 6
11 IN 3B
IN 4 7
10 IN 7
IN 4A 7
10 IN 4B
OUT 8
9 IN 8
OUT A 8
2
9 OUT B
HI-506A, HI-507A, HI-508A, HI-509A
Truth Tables
HI-506A
HI-508A
A3
A2
A1
A0
EN
“ON” CHANNEL
A2
A1
A0
EN
“ON” CHANNEL
X
X
X
X
L
None
X
X
X
L
None
L
L
L
L
H
1
L
L
L
H
1
L
L
L
H
H
2
L
L
H
H
2
L
L
H
L
H
3
L
H
L
H
3
L
L
H
H
H
4
L
H
H
H
4
L
H
L
L
H
5
H
L
L
H
5
L
H
L
H
H
6
H
L
H
H
6
L
H
H
L
H
7
H
H
L
H
7
L
H
H
H
H
8
H
H
H
H
8
H
L
L
L
H
9
H
L
L
H
H
10
H
L
H
L
H
11
A1
A0
EN
“ON” CHANNEL PAIR
H
L
H
H
H
12
X
X
L
None
H
H
L
L
H
13
L
L
H
1
H
H
L
H
H
14
L
H
H
2
H
H
H
L
H
15
H
L
H
3
H
H
H
H
H
16
H
H
H
4
HI-507A
A2
A1
A0
EN
“ON” CHANNEL PAIR
X
X
X
L
None
L
L
L
H
1
L
L
H
H
2
L
H
L
H
3
L
H
H
H
4
H
L
L
H
5
H
L
H
H
6
H
H
L
H
7
H
H
H
H
8
3
HI-509A
HI-506A, HI-507A, HI-508A, HI-509A
Functional Diagrams
HI-506A
HI-507A
OUT
1K
IN 1
OUT
A
1K
IN 1A
1K
1K
IN 2
IN 8A
OUT
B
1K
DECODER/
DRIVER
IN 1B
1K
IN 16
1K
DECODER/
DRIVER
IN 8B
OVERVOLTAGE
CLAMP AND
SIGNAL
ISOLATION
5V
REF
LEVEL
SHIFT
OVERVOLTAGE
CLAMP AND
SIGNAL
ISOLATION
† † † † †
5V
REF
† DIGITAL INPUT
PROTECTION
LEVEL
SHIFT
†
VREF A0 A1 A2 A3 EN
† DIGITAL INPUT
VREF A0
PROTECTION
HI-508A
†
†
†
A1
A2
EN
HI-509A
OUT
1K
IN 1
OUT
A
1K
IN 1A
1K
1K
IN 2
IN 4A
OUT
B
1K
DECODER/
DRIVER
IN 1B
1K
IN 8
1K
DECODER/
DRIVER
IN 4B
OVERVOLTAGE
CLAMP AND
SIGNAL
ISOLATION
5V
REF
LEVEL
SHIFT
†
†
†
†
A0
A1
A2
EN
OVERVOLTAGE
CLAMP AND
SIGNAL
ISOLATION
† DIGITAL INPUT
PROTECTION
5V
REF
LEVEL
SHIFT
†
†
†
A0
A1
EN
† DIGITAL INPUT
PROTECTION
4
HI-506A, HI-507A, HI-508A, HI-509A
Schematic Diagrams
ADDRESS INPUT BUFFER AND LEVEL SHIFTER
TTL REFERENCE
CIRCUIT
V+
R10
R9
Q1
VREF
Q4
D3
GND
LEVEL SHIFTER
V+
OVERVOLTAGE
PROTECTION
P
P
P
N
R2
P
P
P
P
R5
V+
R3
LEVEL
SHIFTED
ADDRESS
TO
DECODE
N
N
R8
N
N
N
N
N
V-
V-
GND
ADD
IN
ADDRESS DECODER
V+
P
P
P
P
A0 OR A0
A1 OR A1
A2 OR A2
A3 OR A3
P
P
P
N
N
N
TO P-CHANNEL
DEVICE OF
THE SWITCH
N
N
TO N-CHANNEL
DEVICE OF
THE SWITCH
N
N
ENABLE
DELETE A3 OR A3 INPUT
FOR HI-507A, HI-508A, HI-509A
DELETE A2 OR A2 INPUT FOR HI-509A
5
P
R7
R6
N
D1
P
R4
D2
R1
200
Ω
P
V-
N
HI-506A, HI-507A, HI-508A, HI-509A
Schematic Diagrams
(Continued)
MULTIPLEX SWITCH
FROM DECODE
OVERVOLTAGE PROTECTION
N
V+
Q5
P
R11
1K
D7
D6
D4
D5
N
IN
OUT
N
Q6
VP
FROM DECODE
6
HI-506A, HI-507A, HI-508A, HI-509A
Absolute Maximum Ratings
Thermal Information
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +44V
V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +22V
V- to GND. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V
Digital Input Voltage (VEN , VA) . . . . . . . . . . . . . (V-) -4V to (V+) +4V
or 20mA, Whichever Occurs First
Analog Signal (VIN, VOUT). . . . . . . . . . . . . . . (V-) -20V to (V+) +20V
Continuous Current, IN or OUT . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Peak Current, IN or OUT, Pulsed 1ms, 10% Duty Cycle (Max). . 40mA
Thermal Resistance (Typical, Note 1)
θJA (oC/W) θJC (oC/W)
28 Ld CERDIP Package. . . . . . . . . . . .
55
18
16 Ld CERDIP Package. . . . . . . . . . . .
85
32
28 Ld PDIP Package . . . . . . . . . . . . . .
60
N/A
16 Ld PDIP Package . . . . . . . . . . . . . .
90
N/A
Maximum Junction Temperature
CERDIP Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .175oC
PDIP Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .150oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300oC
Operating Conditions
Temperature Ranges
HI-506A/507A/508A/509A-2, -8 . . . . . . . . . . . . . . -55oC to 125oC
HI-506A/507A/508A/509A-5, -7 . . . . . . . . . . . . . . . . . 0oC to 75oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
Supplies = +15V, -15V; VREF Pin = Open; VAH (Logic Level High) = 4V; VAL (Logic Level Low) = 0.8V,
Unless Otherwise Specified. For Test Conditions, Consult Test Circuits Section
TEST
CONDITIONS
PARAMETER
-2, -8
-5, -7
TEMP
(oC)
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
25
-
0.5
-
-
0.5
-
µs
Full
-
-
1.0
-
-
1.0
µs
25
25
80
-
25
80
-
ns
DYNAMIC CHARACTERISTICS
Access Time, tA
Note 2
Break-Before-Make Delay, tOPEN
Note 2
Enable Delay (ON), tON(EN)
Note 2
25
-
300
500
-
300
-
ns
Full
-
-
1000
-
-
1000
ns
25
-
300
500
-
300
-
ns
Full
-
-
1000
-
-
1000
ns
To 0.1%
25
-
1.2
-
-
1.2
-
µs
To 0.01%
25
-
3.5
-
-
3.5
-
µs
To 0.1%
25
-
1.2
-
-
1.2
-
µs
To 0.01%
25
-
3.5
-
-
3.5
-
µs
Note 7
25
50
68
-
50
68
-
dB
25
-
10
-
-
10
-
pF
HI-506A
25
-
52
-
-
52
-
pF
HI-507A
25
-
30
-
-
30
-
pF
HI-508A
25
-
25
-
-
25
-
pF
Note 2
Enable Delay (OFF), tOFF(EN)
Settling Time, tS
HI-506A and HI-507A
HI-508A and HI-509A
Off Isolation
Channel Input Capacitance, CS(OFF)
Channel Output Capacitance, CD(OFF)
25
-
12
-
-
12
-
pF
Digital Input Capacitance, CA
HI-509A
25
-
10
-
-
10
-
pF
Input to Output Capacitance, CDS(OFF)
25
-
0.1
-
-
0.1
-
pF
Full
-
-
0.8
-
-
0.8
V
DIGITAL INPUT CHARACTERISTICS
Input Low Threshold, TTL Drive, VAL
Note 2
Input High Threshold, VAH (Note 9)
Note 2
Full
4.0
-
-
4.0
-
-
V
Input Leakage Current (High or Low), IA
Notes 2, 6
Full
-
-
1.0
-
-
1.0
µA
7
HI-506A, HI-507A, HI-508A, HI-509A
Electrical Specifications
Supplies = +15V, -15V; VREF Pin = Open; VAH (Logic Level High) = 4V; VAL (Logic Level Low) = 0.8V,
Unless Otherwise Specified. For Test Conditions, Consult Test Circuits Section (Continued)
TEST
CONDITIONS
TEMP
(oC)
-2, -8
-5, -7
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
MOS Drive, VAL , HI-506A/HI-507A
VREF = +10V
25
-
-
0.8
-
-
0.8
V
MOS Drive, VAH , HI-506A/HI-507A
VREF = +10V
25
6.0
-
-
6.0
-
-
V
Analog Signal Range, VIN
Note 2
Full
-15
-
+15
-15
-
+15
V
On Resistance, rON
Notes 2, 3
PARAMETER
ANALOG CHANNEL CHARACTERISTICS
25
-
1.2
1.5
-
1.5
1.8
kΩ
Full
-
1.5
1.8
-
1.8
2.0
kΩ
25
-
0.03
-
-
0.03
-
nA
Full
-
-
50
-
-
50
nA
25
-
0.1
-
-
0.1
-
nA
HI-506A
Full
-
-
300
-
-
300
nA
HI-507A
Full
-
-
200
-
-
200
nA
HI-508A
Full
-
-
200
-
-
200
nA
HI-509A
Full
-
-
100
-
-
100
nA
25
-
4.0
-
-
4.0
-
nA
Full
-
-
2.0
-
-
-
µA
Off Input Leakage Current, IS(OFF)
Off Output Leakage Current, ID(OFF)
ID(OFF) With Input Overvoltage Applied
On Channel Leakage Current, ID(ON)
Notes 2, 4
Notes 2, 4
Note 5
25
-
0.1
-
-
0.1
-
nA
HI-506A
Notes 2, 4
Full
-
-
300
-
-
300
nA
HI-507A
Full
-
-
200
-
-
200
nA
HI-508A
Full
-
-
200
-
-
200
nA
HI-509A
Full
-
-
100
-
-
100
nA
Full
-
-
50
-
-
50
nA
Full
-
0.5
2.0
-
0.5
2.0
mA
Full
-
0.02
1.0
-
0.02
1.0
mA
Full
-
7.5
-
-
7.5
-
mW
Differential Off Output Leakage Current, IDIFF ,
(HI-507A, HI-509A Only)
POWER SUPPLY CHARACTERISTICS
Current, I+
Notes 2, 8
Current, I-
Notes 2, 8
Power Dissipation, PD
NOTES:
2. 100% tested for Dash 8. Leakage currents not tested at -55oC.
3. VOUT = ±10V, IOUT = +100µA.
4. 10nA is the practical lower limit for high speed measurement in the production test environment.
5. Analog Overvoltage = ±33V.
6. Digital input leakage is primarily due to the clamp diodes (see Schematic). Typical leakage is less than 1nA at 25oC.
7. VEN = 0.8V, RL = 1K, CL = 15pF, VS = 7VRMS , f = 100kHz.
8. VEN , VA = 0V or 4V.
9. To drive from DTL/TTL Circuits, 1kΩ pull-up resistors to +5V supply are recommended.
8
HI-506A, HI-507A, HI-508A, HI-509A
Test Circuits and Waveforms
TA = 25oC, VSUPPLY = ±15V, VAH = 4V, VAL = 0.8V, VREF = Open,
Unless Otherwise Specified
100µA
V2
IN
OUT
VIN
rON =
V2
100µA
FIGURE 1A. TEST CIRCUIT
1.4
1.2
1.1
25oC
1.0
-55oC
0.9
0.8
0.7
0.6
-10
-55oC TO 125oC
VIN = +5V
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
-8
-6
-4
-2
0
2
4
ANALOG INPUT (V)
6
8
10
5
6
7
8
9
10
11
12
13
14
SUPPLY VOLTAGE (±V)
FIGURE 1B. ON RESISTANCE vs ANALOG INPUT VOLTAGE
FIGURE 1C. NORMALIZED ON RESISTANCE vs SUPPLY
VOLTAGE
FIGURE 1. ON RESISTANCE
100nA
LEAKAGE CURRENT
10nA
ON LEAKAGE
CURRENT
ID(ON)
OFF OUTPUT
CURRENT
ID(OFF)
+0.8V
EN
OUT
1nA
A
10pA
±10V
OFF INPUT
LEAKAGE CURRENT
IS(OFF)
100pA
25
50
75
100
ID(OFF)
±
ON RESISTANCE (kΩ)
NORMALIZED RESISTANCE
(REFERRED TO VALUE AT ±15V)
125oC
1.3
10V
125
TEMPERATURE (oC)
FIGURE 2A. LEAKAGE CURRENT vs TEMPERATURE
9
FIGURE 2B. ID(OFF) TEST CIRCUIT (NOTE 10)
15
HI-506A, HI-507A, HI-508A, HI-509A
Test Circuits and Waveforms
TA = 25oC, VSUPPLY = ±15V, VAH = 4V, VAL = 0.8V, VREF = Open,
Unless Otherwise Specified (Continued)
OUT
OUT
IS(OFF)
A
A
+0.8V
EN
±
±10V
A0
10V
A1
ID(ON)
EN
±10V
10V
±
4V
FIGURE 2C. IS(OFF) TEST CIRCUIT (NOTE 10)
FIGURE 2D. ID(On) TEST CIRCUIT (NOTE 10)
NOTE:
10. Two measurements per channel: ±10V and +10V. (Two measurements per device for ID(OFF) ±10V and +10V.)
FIGURE 2. LEAKAGE CURRENTS
ANALOG INPUT CURRENT (mA)
18
6
ANALOG INPUT
CURRENT (IIN)
15
5
12
4
9
3
6
2
OUTPUT OFF LEAKAGE
CURRENT ID(OFF)
3
1
0
OUTPUT OFF LEAKAGE CURRENT (nA)
7
A
IIN
A
ID(OFF)
±VIN
0
15
18
21
24
27
30
33
36
ANALOG INPUT OVERVOLTAGE (±V)
FIGURE 3A. ANALOG INPUT OVERVOLTAGE
CHARACTERISTICS
FIGURE 3B. TEST CIRCUIT
FIGURE 3. ANALOG INPUT OVERVOLTAGE CHARACTERISTICS
±14
-55oC
SWITCH CURRENT (mA)
±12
±10
25oC
125oC
±8
±6
±VIN
±4
A
±2
0
0
2
4
6
8
10
12
14
VOLTAGE ACROSS SWITCH (±V)
FIGURE 4A. ON CHANNEL CURRENT vs VOLTAGE
FIGURE 4. ON CHANNEL CURRENT
10
FIGURE 4B. TEST CIRCUIT
HI-506A, HI-507A, HI-508A, HI-509A
Test Circuits and Waveforms
TA = 25oC, VSUPPLY = ±15V, VAH = 4V, VAL = 0.8V, VREF = Open,
Unless Otherwise Specified (Continued)
+15V/+10V
+ISUPPLY
V+
IN 1
HI-506A †
A2
IN 2
THRU
A1
IN 7/IN 15
6
±10V/±5V
A3
VSUPPLY = ±15V
4
VA
50Ω
VSUPPLY = ±10V
A0
2
IN 8/IN 16
EN
+4V
GND
0
1K
10K
100K
TOGGLE FREQUENCY (Hz)
1M
±
SUPPLY CURRENT (mA)
A
OUT
V-
10V/
10
MΩ
±
8
5V
14
pF
A -ISUPPLY
10M
-15V/-10V
FIGURE 5A. SUPPLY CURRENT vs TOGGLE FREQUENCY
† Similar connection for HI-507A/HI-508A/HI-509A
FIGURE 5B. TEST CIRCUIT
FIGURE 5. DYNAMIC SUPPLY CURRENT
+15V
900
ACCESS TIME (ns)
VREF
A3
700
A2
VA
600
50Ω
A1
HI-506A †
IN 16
EN
+4V
GND
400
±10V
IN 2 THRU
IN 7/IN 15
A0
500
V+
IN 1
±
VREF = OPEN FOR LOGIC HIGH LEVEL ≤ 6V
VREF = LOGIC HIGH FOR LOGIC HIGH LEVELS > 6V
800
10V
OUT
V-
300
3
4
5
6
7
9 10 11 12
8
LOGIC LEVEL (HIGH) (V)
13
14
FIGURE 6A. ACCESS TIME vs LOGIC LEVEL (HIGH)
15
-15V
† Similar connection for HI-507A/HI-580A/HI-509A
FIGURE 6B. TEST CIRCUIT
VAH = 4.0V
VA INPUT
2V/DIV.
ADDRESS
DRIVE (VA)
S1 ON
1/ V
2 AH
0V
+10V
OUTPUT
5V/DIV.
OUTPUT
10%
-10V
S16 ON
tA
200ns/DIV.
FIGURE 6C. MEASUREMENT POINTS
FIGURE 6D. WAVEFORMS
FIGURE 6. ACCESS TIME
11
10
kΩ
50
pF
HI-506A, HI-507A, HI-508A, HI-509A
Test Circuits and Waveforms
A3
TA = 25oC, VSUPPLY = ±15V, VAH = 4V, VAL = 0.8V, VREF = Open,
Unless Otherwise Specified (Continued)
HI-506A †
A2
+5V
IN 1
VAH = 4.0V
IN 2 THRU
VA
50Ω
+4.0V
A1
IN 7/IN 15
A0
IN 8/IN 16
EN
OUT
ADDRESS
DRIVE (VA)
0V
VOUT
OUTPUT
GND
1kΩ
50pF
50%
tOPEN
† Similar connection for HI-507A/HI-508A/HI-509A
FIGURE 7A. TEST CIRCUIT
FIGURE 7B. MEASUREMENT POINTS
VA INPUT
2V/DIV.
S1 ON
S16 ON
OUTPUT
0.5V/DIV.
100ns/DIV.
FIGURE 7C. WAVEFORMS
FIGURE 7. BREAK-BEFORE-MAKE DELAY
12
50%
HI-506A, HI-507A, HI-508A, HI-509A
Test Circuits and Waveforms
A3
TA = 25oC, VSUPPLY = ±15V, VAH = 4V, VAL = 0.8V, VREF = Open,
Unless Otherwise Specified (Continued)
HI-506A †
A2
IN 1
A1
IN 2 THRU
IN 7/IN 15
IN 8 /IN 16
+10V
VAH = 4.0V
50%
50%
0V
A0
EN
VA
50Ω
ENABLE DRIVE
(VA)
VOUT
OUT
GND
1kΩ
90%
OUTPUT
10%
0V
50pF
tON(EN)
tOFF(EN)
† Similar connection for HI-507A//HI-508A/HI-509A
FIGURE 8A. TEST CIRCUIT
FIGURE 8B. MEASUREMENT POINTS
ENABLE DRIVE
2V/DIV.
DISABLED
ENABLED
(S1 ON)
OUTPUT
2V/DIV.
100ns/DIV.
FIGURE 8C. WAVEFORMS
FIGURE 8. ENABLE DELAYS
13
HI-506A, HI-507A, HI-508A, HI-509A
Die Characteristics
DIE DIMENSIONS:
WORST CASE CURRENT DENSITY:
1.4 x 105 A/cm2
159 mils x 83.9 mils
TRANSISTOR COUNT:
METALLIZATION:
485
Type: CuAl
Thickness: 16kÅ ±2kÅ
PROCESS:
SUBSTRATE POTENTIAL (NOTE):
CMOS-DI
-VSUPPLY
PASSIVATION:
Silox: 12kÅ ±2kÅ
Nitride: 3.5kÅ ±1kÅ
NOTE: The substrate appears resistive to the -VSUPPLY terminal, therefore it may be left floating (Insulating Die Mount) or it may be mounted on a
conductor at -VSUPPLY potential.
Metallization Mask Layouts
HI-506A
EN
(18)
A0
(17)
A1 A2
(16) (15)
HI-507A
A3 VREF
(14) (13)
GND
(12)
EN
(18)
A0
(17)
A1 A2
(16) (15)
NC VREF
(14) (13)
GND
(12)
IN 1
(19)
IN 9
(11)
IN 1A
(19)
IN 2
(20)
IN 10
(10)
IN 2A
(20)
IN 3
(21)
IN 11
(9)
IN 3A
(21)
IN 3B
(9)
IN 4
(22)
IN 12
(8)
IN 4A
(22)
IN 4B
(8)
IN 5
(23)
IN 6
(24)
IN 13
(7)
IN 14
(6)
IN 5A
(23)
IN 6A
(24)
IN 5B
(7)
IN 6B
(6)
IN 7
(25)
IN 15
(5)
IN 7A
(25)
IN 7B
(5)
IN 8
(26)
IN 16
(4)
IN 8A
(26)
IN 8B
(4)
V- (27)
+V (1)
OUT (28)
14
NC (2)
V- (27)
IN 1B
(11)
IN 2B
(10)
OUT A (28)
+V (1)
OUT B(2)
HI-506A, HI-507A, HI-508A, HI-509A
Die Characteristics
DIE DIMENSIONS:
WORST CASE CURRENT DENSITY:
1.4 x 105 A/cm2
108 mils x 83 mils
TRANSISTOR COUNT:
METALLIZATION:
253
Type: CuAl
Thickness: 16kÅ ±2kÅ
PROCESS:
SUBSTRATE POTENTIAL (NOTE):
CMOS-DI
-VSUPPLY
PASSIVATION:
Silox: 12kÅ ±2kÅ
Nitride: 3.5kÅ ±1kÅ
NOTE: The substrate appears resistive to the -VSUPPLY terminal, therefore it may be left floating (Insulating Die Mount) or it may be mounted on a
conductor at -VSUPPLY potential.
Metallization Mask Layouts
HI-508A
IN 6
(11)
IN 7 IN 8
(10) (9)
HI-509A
OUT
(8)
IN 4 IN 3
(7)
(6)
IN 3B IN 4B OUT B
(11) (10)
(9)
OUT A
(8)
IN 4A IN 3A
(7)
(6)
IN 5
(12)
IN 2
(5)
IN 2B
(12)
IN 2A
(5)
+V
(13)
GND
(14)
IN 1
(4)
-V
(3)
IN 1B
(13)
+V
(14)
IN 1A
(4)
-V
(3)
A2
(15)
A1
(16)
A0
(1)
EN
(2)
GND
(15)
A1
(16)
A0
(1)
EN
(2)
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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15
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