Fairchild FDS3570 80v n-channel powertrench mosfet Datasheet

FDS3570
80V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
•
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R DS(on)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
D
D
9 A, 80 V. RDS(ON) = 0.020 Ω @ VGS = 10 V
RDS(ON) = 0.023 Ω @ VGS = 6 V.
•
Fast switching speed.
•
High performance trench technology for extremely
low RDS(ON).
•
High power and current handling capability.
D
D
SO-8
S
S
S
4
6
3
7
2
8
1
G
Absolute Maximum Ratings
Symbol
5
TA = 25°C unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
80
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
9
A
- Continuous
(Note 1a)
- Pulsed
PD
Power Dissipation for Single Operation
50
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
W
1
-55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDS3570
FDS3570
13’’
12mm
2500 units
2000 Fairchild Semiconductor International
FDS3570 Rev. C
FDS3570
December 2000
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
IAR
Single Pulse Drain-Source
VDD = 40 V, ID = 9 A
Avalanche Energy
Maximum Drain-Source Avalanche Current
Off Characteristics
360
mJ
9
A
BVDSS
∆BVDSS
∆TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to
25°C
VDS = 64 V, VGS = 0 V
IGSSF
Gate-Body Leakage,Forward
VGS = 20 V, VDS = 0 V
100
µA
nA
IGSSR
Gate-Body Leakage,Reverse
VGS = -20 V, VDS = 0 V
-100
nA
On Characteristics
80
V
mV/°C
77
1
(Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
ID(on)
On-State Drain Current
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to
25°C
VGS = 10 V, ID = 9 A
VGS = 10 V, ID = 9 A, TJ = 125°C
VGS = 6 V, ID = 8.4 A
VGS = 10 V, VDS = 5 V
gFS
Forward Transconductance
VDS = 5 V, ID = 7.6 A
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
2
2.4
4
0.015
0.027
0.016
V
mV/°C
-7
0.020
0.038
0.023
25
Ω
A
40
S
Dynamic Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
2750
pF
280
pF
140
pF
(Note 2)
VDD = 40 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
20
32
12
24
ns
Turn-Off Delay Time
60
95
ns
tf
Turn-Off Fall Time
24
38
ns
Qg
Total Gate Charge
54
76
nC
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 40 V, ID = 9 A,
VGS = 10 V
ns
9.6
nC
14
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 2.1 A
(Note 2)
0.72
2.1
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50° C/W when
mounted on a 1 in2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.04 in2
pad of 2 oz. copper.
c) 125° C/W when
mounted on a minimum
pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDS3570 Rev. C
FDS3570
Electrical Characteristics
FDS3570
Typical Characteristics
2
ID, DRAIN CURRENT (A)
VGS = 10V
5.0V
6 0V
40
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
50
4.5V
30
4.0V
20
10
3.5V
0
1.8
1.6
VGS = 4.0V
1.4
4.5V
5.0V
1.2
6.0V
7.0V
0.8
0
1
2
3
0
10
VDS, DRAIN-SOURCE VOLTAGE (V)
20
30
40
50
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 1. On-Region Characteristics.
0.06
2
ID = 9A
VGS = 10V
1.8
ID = 4.5A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
10V
1
1.6
1.4
1.2
1
0.8
0.6
0.05
o
TA = 125 C
0.04
0.03
0.02
o
TA = 25 C
0.01
0
0.4
0
-50
-25
0
25
50
75
100
125
2
150
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
o
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
60
100
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
50
40
30
20
o
125 C
10
25
o
o
TA = -55 C
VGS = 0V
10
o
TA = 125 C
1
o
25 C
o
0.1
-55 C
0.01
0.001
0.0001
0
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current
and Temperature.
FDS3570 Rev. C
4000
VDS = 10V
ID = 9A
f = 1MHz
VGS = 0 V
3500
20V
8
40V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
6
4
2
3000
CISS
2500
2000
1500
1000
500
0
COSS
CRSS
0
0
10
20
30
40
50
60
0
10
Qg, GATE CHARGE (nC)
20
30
40
100
60
50
RDS(ON) LIMIT
SINGLE PULSE
100µs
o
100ms
VGS = 10V
SINGLE PULSE
0.1
o
TA = 25 C
1s
10s
DC
1
RθJA = 125 C/W
40
1ms
10ms
10
POWER (W)
ID, DRAIN CURRENT (A)
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
o
RθJA = 125 C/W
30
20
10
o
TA = 25 C
0.01
0
0.1
1
10
100
0.001
0.01
r(t), NORM ALIZED EFFECTIVE
VDS, DRAIN-SOURCE VOLTAGE (V)
TR ANSI ENT TH ER MAL RESISTANC E
VDS = 10V
ID = 9A
0.1
1
10
100
SINGLE PULSE TIME (SEC)
1
0.5
0.2
0.1
0.05
D = 0.5
R θJ A (t) = r(t) * R θJ A
R θJ A= 125°C /W
0.2
0.1
0 .0 5
P(p k )
0.0 2
0.02
t1
0.01
0.01
S i n g le P ul s e
t2
TJ - TA = P * RθJA ( )t
0.0 05
D u t y C y c l e, D = t 1 /t2
0.0 02
0.0 01
0.0001
0.0 01
0.01
0.1
t 1, TI M E (s e c )
1
10
100
300
1000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
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GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench 
QFET™
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QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
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SuperSOT™-6
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with instructions for use provided in the labeling, can be
effectiveness.
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user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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