Rohm FMG3A Npn 100ma 50v complex digital transistors (bias resistor built-in transistors) Datasheet

EMG3 / UMG3N / FMG3A
Datasheet
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
lOutline
Parameter
Tr1 and Tr2
VCEO
50V
100mA
4.7kW
IC(MAX.)
R1
EMT5
UMT5
(3)
(5)
(1)
(4)
(2)
(5)
EMG3
(SC-107BB)
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
6) Only the on/off conditions need to be set for
operation, making the circuit design easy.
7) Lead Free/RoHS Compliant.
UMG3N
SOT-353 (SC-88A)
(1)
lFeatures
1) Built-In Biasing Resistors.
2) Two DTC143T chips in one package.
3) Emitter-common type.
4) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
5) The bias resistors consist of thin-film resistors
(2)
(5)
(4)
(3)
FMG3A
(SC-74A)
lInner circuit
EMG3 / UMG3N
Base
(3)
(4)
Collector
lApplication
(1)
(4)
(3)
SMT5
(2)
Emitter
(2)
FMG3A
Base
(1)
Base
(3)
(5)
Collector
(2)
Collector
Emitter
(4)
Base
(5)
(1)
Collector
Inverter circuit, Interface circuit, Driver circuit
lPackaging specifications
Package
Package
size
(mm)
Taping
code
EMG3
EMT5
1616
T2R
180
8
8,000
G3
UMG3N
UMT5
2021
TR
180
8
3,000
G3
FMG3A
SMT5
2928
T148
180
8
3,000
G3
Part No.
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© 2012 ROHM Co., Ltd. All rights reserved.
1/6
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
Marking
2012.06 - Rev.B
Data Sheet
EMG3 / UMG3N / FMG3A
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Values
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
IC(MAX.)*1
100
mA
150 (Total)*3
mW
300 (Total)*4
mW
Tj
150
°C
Tstg
-55 to +150
°C
Collector current
Power dissipation
EMG3 / UMG3N
PD
FMG3A
Junction temperature
Range of storage temperature
*2
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Min.
Typ.
Max.
Unit
IC= 50mA
50
-
-
V
BVCEO
IC= 1mA
50
-
-
V
BVEBO
IE= 50mA
5
-
-
V
Collector cut-off current
ICBO
VCB = 50V
-
-
0.5
mA
Emitter cut-off current
IEBO
VEB = 4V
-
-
0.5
mA
IC / IB= 5mA / 0.25mA
-
-
0.15
V
100
250
600
-
Collector-emitter saturation voltage
VCE(sat)
Conditions
DC current gain
hFE
Input resistance
R1
-
3.5
4.7
5.9
kW
Transition frequency
fT *1
VCE = 10V, IE = -5mA,
f = 100MHz
-
250
-
MHz
VCE= 5V , IC= 1mA ,
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
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© 2012 ROHM Co., Ltd. All rights reserved.
2/6
2012.06 - Rev.B
Data Sheet
EMG3 / UMG3N / FMG3A
lElectrical characteristic curves(Ta = 25°C)
Fig.2 Grounded emitter output
characteristics
Fig.1 Grounded emitter propagation
characteristics
100
10
Ta=25ºC
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : Ic (mA)
VCE=5V
1
0.1
Ta=100ºC
25ºC
-40ºC
0.01
0.001
0
0.5
1
1.5
2
BASE TO EMITTER VOLTAGE : VBE (V)
IB= 500μA
450μA
400μA
80
350μA
300μA
60
250μA
200μA
40
150μA
100μA
20
0
50μA
0A
0
5
10
COLLECTOR TO EMITTER
VOLTAGE : VCE (V)
Fig.4 Collector-emitter saturation voltage
vs. Collector Current
DC CURRENT GAIN : hFE
COLLECTOR SATURATION
VOLTAGE : VCE(sat) (V)
Fig.3 DC Current gain
vs. Collector Current
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
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© 2012 ROHM Co., Ltd. All rights reserved.
3/6
2012.06 - Rev.B
Data Sheet
EMG3 / UMG3N / FMG3A
lDimensions (Unit : mm)
D
EMT5
A
x
c
S A
Lp
Lp
HE
L
E
L
b
A1
y S
l1
A
e1
e
S
e
b2
Patterm of terminal position areas
DIM
A1
A
b
c
D
E
e
HE
L
Lp
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
0.00
0.10
0.45
0.55
0.17
0.27
0.08
0.18
1.50
1.70
1.10
1.30
0.50
1.50
1.70
0.10
0.30
0.35
0.10
0.10
MILIMETERS
MIN
MAX
1.25
0.37
0.45
INCHES
MIN
0
0.018
0.007
0.003
0.059
0.043
MAX
0.004
0.022
0.011
0.007
0.067
0.051
0.02
0.059
0.004
-
0.067
0.012
0.014
0.004
0.004
INCHES
MIN
MAX
0.049
-
0.015
0.018
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
4/6
2012.06 - Rev.B
Data Sheet
EMG3 / UMG3N / FMG3A
lDimensions (Unit : mm)
UMT5
D
A
e
c
x
Lp
L1
A3
S A
e
e1
l1
y S
A1
A
b
HE
E
Q
S
b2
Patterm of terminal position areas
DIM
A
A1
A3
b
c
D
E
e
HE
L1
Lp
Q
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
0.80
1.00
0.00
0.10
0.25
0.15
0.30
0.10
0.20
1.90
2.10
1.15
1.35
0.65
2.00
2.20
0.20
0.50
0.25
0.55
0.10
0.30
0.10
0.10
MILIMETERS
MIN
MAX
1.55
0.40
0.65
INCHES
MIN
0.031
0
MAX
0.039
0.004
0.01
0.006
0.004
0.075
0.045
0.012
0.008
0.083
0.053
0.03
0.079
0.008
0.01
0.004
-
0.087
0.02
0.022
0.012
0.004
0.004
INCHES
MIN
MAX
0.06
-
0.016
0.026
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
5/6
2012.06 - Rev.B
Data Sheet
EMG3 / UMG3N / FMG3A
lDimensions (Unit : mm)
SMT5
D
A
e
c
L1
Lp
HE
E
Q
b
A3
x
S A
y S
A1
l1
A
e1
e
S
b2
Patterm of terminal position areas
DIM
A
A1
A3
b
c
D
E
e
HE
L1
Lp
Q
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
1.00
1.30
0.00
0.10
0.25
0.25
0.40
0.09
0.25
2.80
3.00
1.50
1.80
0.95
2.60
3.00
0.30
0.60
0.40
0.70
0.20
0.30
0.20
0.10
MILIMETERS
MIN
MAX
2.10
0.60
0.90
INCHES
MIN
0
MAX
0.051
0.004
0.01
0.01
0.004
0.11
0.059
0.016
0.01
0.118
0.071
0.04
0.102
0.012
0.016
0.008
-
0.118
0.024
0.028
0.012
0.008
0.004
INCHES
MIN
MAX
0.08
-
0.024
0.035
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
6/6
2012.06 - Rev.B
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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R1120A
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