ON MJD31CT4 Complementary power transistor Datasheet

MJD31, MJD31C (NPN),
MJD32, MJD32C (PNP)
MJD31C and MJD32C are Preferred Devices
Complementary Power
Transistors
DPAK For Surface Mount Applications
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Designed for general purpose amplifier and low speed switching
applications.
SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
Features
•
•
•
•
•
•
•
Lead Formed for Surface Mount Applications in Plastic Sleeves
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
Epoxy Meets UL 94, V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
Pb−Free Packages are Available
MARKING
DIAGRAMS
4
1 2
MAXIMUM RATINGS
3
Rating
Symbol
Collector−Emitter Voltage
Vdc
VCB
Emitter−Base Voltage
Vdc
40
100
1
2
VEB
5
Vdc
Collector Current − Continuous
− Peak
IC
3
5
Adc
Base Current
IB
1
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
15
0.12
W
W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
1.56
0.012
W
W/°C
TJ, Tstg
−65 to
+ 150
°C
Operating and Storage Junction
Temperature Range
DPAK−3
CASE 369D
STYLE 1
YWW
J3xxG
4
40
100
MJD31, MJD32
MJD31C, MJD32C
YWW
J3xxG
Unit
VCEO
MJD31, MJD32
MJD31C, MJD32C
Collector−Base Voltage
Max
DPAK
CASE 369C
STYLE 1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
3
Y
WW
xx
G
= Year
= Work Week
= 1, 1C, 2, or 2C
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristic
RqJC
8.3
°C/W
Thermal Resistance, Junction−to−Ambient*
RqJA
80
°C/W
TL
260
°C
Lead Temperature for Soldering Purposes
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 6
1
Publication Order Number:
MJD31/D
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
40
100
−
−
ICEO
−
50
mAdc
Collector Cutoff Current
(VCE = Rated VCEO, VEB = 0)
ICES
−
20
mAdc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
−
1
mAdc
25
10
−
50
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
VCEO(sus)
MJD31, MJD32
MJD31C, MJD32C
Vdc
MJD31, MJD32
MJD31C, MJD32C
ON CHARACTERISTICS (Note 1)
hFE
DC Current Gain
(IC = 1 Adc, VCE = 4 Vdc)
(IC = 3 Adc, VCE = 4 Vdc)
−
Collector−Emitter Saturation Voltage
(IC = 3 Adc, IB = 375 mAdc)
VCE(sat)
−
1.2
Vdc
Base−Emitter On Voltage
(IC = 3 Adc, VCE = 4 Vdc)
VBE(on)
−
1.8
Vdc
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)
fT
3
−
MHz
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)
hfe
20
−
−
DYNAMIC CHARACTERISTICS
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. fT = ⎪hfe⎪• ftest.
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2
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
TYPICAL CHARACTERISTICS
VCC
+30 V
PD, POWER DISSIPATION (WATTS)
TA TC
2.5 25
2 20
+11 V
1.5 15
TA (SURFACE MOUNT)
SCOPE
TC
1 10
0.5
5
0
0
25
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
50
75
100
T, TEMPERATURE (°C)
125
150
Figure 2. Switching Time Test Circuit
2
TJ = 150°C
VCE = 2 V
1
0.7
0.5
100
25°C
70
50
−55 °C
30
10
7
5
0.03
0.3
tr @ VCC = 30 V
tr @ VCC = 10 V
0.07
0.05
0.05 0.07 0.1
0.5
0.3
0.7
1
0.03
0.02
0.03
3
td @ VBE(off) = 2 V
0.05 0.07 0.1
0.3
0.5 0.7
3
Figure 4. Turn−On Time
3
2
1.4
TJ = 25°C
IB1 = IB2
IC/IB = 10
ts′ = ts − 1/8 tf
TJ = 25°C
ts′
1
t, TIME (s)
μ
1
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2 V
0.4
tf @ VCC = 30 V
0.7
0.5
0.3
0.2
tf @ VCC = 10 V
0.1
0.07
0.05
VCE(sat) @ IC/IB = 10
0
0.003 0.005 0.01 0.02 0.03 0.05
1
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain
0.2
IC/IB = 10
TJ = 25°C
0.1
IC, COLLECTOR CURRENT (AMPS)
1.2
−4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
REVERSE ALL POLARITIES FOR PNP.
t, TIME (s)
μ
300
D1
51
−9 V
500
hFE , DC CURRENT GAIN
RB
0
Figure 1. Power Derating
V, VOLTAGE (VOLTS)
RC
25 ms
0.1
0.2 0.3 0.5
1
0.03
0.03
2 3
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 5. “On” Voltages
Figure 6. Turn−Off Time
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3
2
3
300
2
TJ = +25°C
TJ = 25°C
200
1.6
IC = 0.3 A
1.2
1A
CAPACITANCE (pF)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
3A
0.8
Ceb
70
50
0.4
0
100
1
2
5
10
20
50
100
IB, BASE CURRENT (mA)
200
500
30
0.1
1000
Ccb
0.2 0.3
0.5
1
2 3
5
10
VR, REVERSE VOLTAGE (VOLTS)
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 7. Collector Saturation Region
1
0.7
0.5
20 30 40
Figure 8. Capacitance
D = 0.5
0.3
0.2
0.2
RqJC(t) = r(t) RqJC
RqJC = 8.33°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
0.1
0.1
0.05
0.07
0.05
0.01
0.03
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
20
30
50
100
200 300
500
1k
Figure 9. Thermal Response
IC, COLLECTOR CURRENT (AMPS)
10
5
3
2
1ms
1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 10 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
v 150_C. T J(pk) may be calculated from the data in
Figure 9. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100ms
500ms
dc
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED VCEO
TC = 25°C SINGLE PULSE
TJ = 150°C
MJD31, MJD32
0.01
1.5 2
MJD31C, MJD32C
3
5 7 10
20 30
50 70 100 150
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 10. Active Region Safe Operating Area
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4
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
ORDERING INFORMATION
Package Type
Package
Shipping †
DPAK
369C
75 Units / Rail
MJD31CG
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD31C1
DPAK−3
369D
75 Units / Rail
MJD31C1G
DPAK−3
(Pb−Free)
369D
75 Units / Rail
MJD31CRL
DPAK
369C
1800 Tape & Reel
DPAK
(Pb−Free)
369C
1800 Tape & Reel
DPAK
369C
2500 Tape & Reel
DPAK
(Pb−Free)
369C
2500 Tape & Reel
DPAK
369C
2500 Tape & Reel
DPAK
(Pb−Free)
369C
2500 Tape & Reel
DPAK
369C
75 Units / Rail
MJD32CG
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD32C1
DPAK−3
369D
75 Units / Rail
MJD32C1G
DPAK−3
(Pb−Free)
369D
75 Units / Rail
MJD32CRL
DPAK
369C
1800 Tape & Reel
DPAK
(Pb−Free)
369C
1800 Tape & Reel
DPAK
369C
2500 Tape & Reel
DPAK
(Pb−Free)
369C
2500 Tape & Reel
DPAK
369C
1800 Tape & Reel
DPAK
(Pb−Free)
369C
1800 Tape & Reel
DPAK
369C
2500 Tape & Reel
DPAK
(Pb−Free)
369C
2500 Tape & Reel
Device
MJD31C
MJD31CRLG
MJD31CT4
MJD31CT4G
MJD31T4
MJD31T4G
MJD32C
MJD32CRLG
MJD32CT4
MJD32CT4G
MJD32RL
MJD32RLG
MJD32T4
MJD32T4G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
T
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
T
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7
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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For additional information, please contact your
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MJD31/D
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