ON MMT05B23 Thyristor surge protector Datasheet

MMT05B230T3,
MMT05B260T3,
MMT05B310T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
http://onsemi.com
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
• High Surge Current Capability: 50 Amps 10 x 1000 µsec, for
Controlled Temperature Environments
• The MMT05B230T3 Series is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
IEC 950, UL 1459 & 1950 and FCC Part 68.
• Bidirectional Protection in a Single Device
• Little Change of Voltage Limit with Transient Amplitude or Rate
• Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
• Fail−Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
• Surface Mount Technology (SMT)
• Indicates UL Registered − File #E210057
• Device Marking: MMT05B230T3: RPBF; MMT05B260T3: RPBG;
MMT05B310T3: RPBJ, and Date Code
BIDIRECTIONAL TSPD (
50 AMP SURGE
265 thru 365 VOLTS
MT1
Symbol
Off−State Voltage − Maximum
MMT05B230T3
MMT05B260T3
MMT05B310T3
VDM
Maximum Pulse Surge Short Circuit
Current Non−Repetitive
Double Exponential Decay Waveform
(Notes 1. and 2.)
(−25°C Initial Temperature)
8 x 20 µsec
10 x 160 µsec
10 x 560 µsec
10 x 1000 µsec
Maximum Non−Repetitive Rate of
Change of On−State Current
Double Exponential Waveform,
R = 1.0, L = 1.5 µH, C = 1.67 µF,
Ipk = 110A
Value
MARKING DIAGRAMS
YWW
RPBx
RPBx
x
Y
WW
Unit
Volts
170
200
270
150
100
70
50
di/dt
150
A/µs
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
 Semiconductor Components Industries, LLC, 2004
March, 2004 − Rev. 7
= Specific Device Code
= F, G or J
= Year
= Work Week
ORDERING INFORMATION
A(pk)
IPPS1
IPPS2
IPPS3
IPPS4
MT2
SMB
(No Polarity)
(Essentially JEDEC DO−214AA)
CASE 403C
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
)
Device
Package
Shipping†
MMT05B230T3
SMB
12mm Tape and Reel
(2.5K/Reel)
MMT05B260T3
SMB
12mm Tape and Reel
(2.5K/Reel)
MMT05B310T3
SMB
12mm Tape and Reel
(2.5K/Reel)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
MMT05B230T3/D
MMT05B230T3, MMT05B260T3, MMT05B310T3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Operating Temperature Range
Blocking or Conducting State
TJ1
−40 to + 125
°C
Overload Junction Temperature − Maximum Conducting State Only
TJ2
+ 175
°C
Instantaneous Peak Power Dissipation (Ipk = 50 A, 10x1000 µsec @ 25°C)
PPK
2000
W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristics
Breakover Voltage (Both polarities)
(dv/dt = 100 V/µs, ISC = 1.0 A, Vdc = 1000 V)
Symbol
Min
Typ
Max
MMT05B230T3
MMT05B260T3
MMT05B310T3
−
−
−
−
−
−
265
320
365
MMT05B230T3
MMT05B260T3
MMT05B310T3
−
−
−
−
−
−
280
340
400
MMT05B230T3
MMT05B260T3
MMT05B310T3
−
−
−
−
−
−
265
320
365
MMT05B230T3
MMT05B260T3
MMT05B310T3
−
−
−
−
−
−
280
340
400
−
0.08
−
−
−
−
190
240
280
−
−
−
V(BO)
Unit
Volts
(+65°C)
Breakover Voltage (Both polarities)
(f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms),
RI = 1.0 kΩ, t = 0.5 cycle) (Note 3.)
V(BO)
Volts
(+65°C)
Breakover Voltage Temperature Coefficient
dV(BO)/dTJ
Breakdown Voltage (I(BR) = 1.0 mA) Both polarities
V(BR)
MMT05B230T3
MMT05B260T3
MMT05B310T3
%/°C
Volts
Off State Current (VD1 = 50 V) Both polarities
Off State Current (VD2 = VDM) Both polarities
ID1
ID2
−
−
−
−
2.0
5.0
µA
On−State Voltage (IT = 1.0 A)
(PW ≤ 300 µs, Duty Cycle ≤ 2%) (Note 3.)
VT
−
1.53
3.0
Volts
Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kΩ)
Both polarities
IBO
−
230
−
mA
Holding Current (Both polarities)
VS = 500 Volts; IT (Initiating Current) = 1.0 Amp
IH
150
340
−
mA
dv/dt
2000
−
−
V/µs
CO
−
−
22
53
−
75
pF
(Note 3.)
Critical Rate of Rise of Off−State Voltage
(Linear waveform, VD = Rated VBR, TJ = 25°C)
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal)
3. Measured under pulse conditions to reduce heating.
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2
MMT05B230T3, MMT05B260T3, MMT05B310T3
Voltage Current Characteristic of TSPD
(Bidirectional Device)
+ Current
Symbol
Parameter
ID1, ID2
Off State Leakage Current
VD1, VD2
Off State Blocking Voltage
VBR
Breakdown Voltage
VBO
Breakover Voltage
IBO
Breakover Current
IH
Holding Current
VTM
On State Voltage
VTM
IH
ID1
VD2
V(BR)
340
V BR , BREAKDOWN VOLTAGE (VOLTS)
I D1, OFF−STATE CURRENT (µ A)
I(BO)
ID2
+ Voltage
VD1
100
VD1 = 50V
10
1
0.1
0.01
V(BO)
0
20
40
60
80
100
TEMPERATURE (°C)
120
320
280
260
Figure 1. Off−State Current versus Temperature
MMT05B260T3
240
220
MMT05B230T3
200
180
160
− 50
140
MMT05B310T3
300
−25
0
25
50
TEMPERATURE (°C)
75
100
125
Figure 2. Breakdown Voltage versus Temperature
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3
380
1000
360
900
340
I H , HOLDING CURRENT (mA)
V BO , BREAKOVER VOLTAGE (VOLTS)
MMT05B230T3, MMT05B260T3, MMT05B310T3
MMT05B310T3
320
300
280
MMT05B260T3
260
240
MMT05B230T3
800
700
600
500
400
300
200
220
200
− 50
− 25
0
25
50
TEMPERATURE (°C)
75
100
100
− 50
125
Figure 3. Breakover Voltage versus Temperature
−25
0
25
50
TEMPERATURE (°C)
75
100
125
Figure 4. Holding Current versus Temperature
Peak
Value
100
CURRENT (A)
Ipp − PEAK PULSE CURRENT − %Ipp
100
tr = rise time to peak value
tf = decay time to half value
Half Value
50
1
0.001
0
0 tr
10
tf
TIME (s)
Figure 5. Exponential Decay Pulse Waveform
0.01
0.1
1
TIME (sec)
10
100
Figure 6. Peak Surge On−State Current versus
Surge Current Duration, Sinusoidal Waveform
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4
MMT05B230T3, MMT05B260T3, MMT05B310T3
TIP
OUTSIDE
PLANT
GND
TELECOM
EQUIPMENT
GND
TELECOM
EQUIPMENT
RING
PPTC*
TIP
OUTSIDE
PLANT
RING
PPTC*
*Polymeric PTC (positive temperature coefficient) overcurrent protection device
HEAT COIL
TIP
OUTSIDE
PLANT
GND
RING
HEAT COIL
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5
TELECOM
EQUIPMENT
MMT05B230T3, MMT05B260T3, MMT05B310T3
PACKAGE DIMENSIONS
SMB
(No Polarity)
(Essentially JEDEC DO−214AA)
CASE 403C−01
ISSUE A
S
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
D
B
C
K
P
INCHES
DIM MIN
MAX
A
0.160
0.180
B
0.130
0.150
C
0.075
0.095
D
0.077
0.083
H 0.0020 0.0060
J
0.006
0.012
K
0.030
0.050
P
0.020 REF
S
0.205
0.220
MILLIMETERS
MIN
MAX
4.06
4.57
3.30
3.81
1.90
2.41
1.96
2.11
0.051
0.152
0.15
0.30
0.76
1.27
0.51 REF
5.21
5.59
H
J
SOLDERING FOOTPRINT*
0.089
2.261
0.108
2.743
inches
mm
0.085
2.159
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMT05B230T3/D
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