BELLING BLV297 N-channel enhancement mode power mosfet Datasheet

BLV297
N-channel Enhancement Mode Power MOSFET
•
Ease of Paralleling
BVDSS
200V
•
Fast Switching
RDS(ON)
2.0Ω
Ω
•
Simple Drive Requirements
ID
0.65A
Description
This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
Designed for high efficiency logic level circuit.
o Die size with scribe line
Scribe line
1570µm X 1570µm
o Die Thickness
o Metallization
300± 20um
80um
Top
Al
Bottom
Ti / Ni / Ag
o Bonding Pad Size
Gate
140µm X 102µm
Source
540µm X 540µm
o Passivation
Electrical Characteristics ( TC=25C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VGS=0V, ID=250uA
200
-
-
V
-
-
2.0
Ω
0.5
-
1.8
V
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance VGS=10V, ID=0.65A
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=400uA
IDSS
Drain-Source Leakage Current
VDS=200V, VGS=0V
-
-
0.1
uA
IGSS
Gate-Source Leakage Current
VGS= 20V
-
-
10
nA
VSD
Forward On Voltage
VGS=0V, IS=0.65A
-
-
1.2
V
http://www.belling.com.cn
-1Total 1 Pages
2/27/2008
Similar pages