Order this document by MPF4392/D SEMICONDUCTOR TECHNICAL DATA 1 DRAIN N–Channel — Depletion 3 GATE Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 30 Vdc Drain – Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc Forward Gate Current IG(f) 50 mAdc PD 350 2.8 mW mW/°C Tchannel, Tstg – 65 to +150 °C Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Channel Temperature Range 1 2 3 CASE 29–04, STYLE 5 TO–92 (TO–226AA) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)GSS 30 — — Vdc — — — — 1.0 0.2 nAdc µAdc — — — — 1.0 0.1 nAdc µAdc – 2.0 – 0.5 — — – 5.0 – 3.0 25 5.0 — — 75 30 — — — — 0.4 0.4 — — — — 60 100 — — 17 12 — — OFF CHARACTERISTICS Gate – Source Breakdown Voltage (IG = 1.0 µAdc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100°C) IGSS Drain–Cutoff Current (VDS = 15 Vdc, VGS = 12 Vdc) (VDS = 15 Vdc, VGS = 12 Vdc, TA = 100°C) ID(off) Gate Source Voltage (VDS = 15 Vdc, ID = 10 nAdc) VGS MPF4392 MPF4393 Vdc ON CHARACTERISTICS Zero – Gate –Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0) Drain–Source On–Voltage (ID = 6.0 mAdc, VGS = 0) (ID = 3.0 mAdc, VGS = 0) Static Drain–Source On Resistance (ID = 1.0 mAdc, VGS = 0) IDSS MPF4392 MPF4393 mAdc VDS(on) MPF4392 MPF4393 Vdc Ω rDS(on) MPF4392 MPF4393 SMALL– SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 Vdc, ID = 25 mAdc, f = 1.0 kHz) (VDS = 15 Vdc, ID = 5.0 mAdc, f = 1.0 kHz) 1. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 3.0%. |yfs| MPF4392 MPF4393 mmhos Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max — — — — 60 100 — 6.0 10 — — 2.5 3.2 3.5 — — — 2.0 2.5 5.0 5.0 — — 15 29 20 35 — — 4.0 6.5 15 15 — — 20 37 35 55 Unit SMALL– SIGNAL CHARACTERISTICS (continued) Drain–Source “ON” Resistance (VGS = 0, ID = 0, f = 1.0 kHz) Ω rds(on) MPF4392 MPF4393 Input Capacitance (VGS = 15 Vdc, VDS = 0, f = 1.0 MHz) Ciss Reverse Transfer Capacitance (VGS = 12 Vdc, VDS = 0, f = 1.0 MHz) (VDS = 15 Vdc, ID = 10 mAdc, f = 1.0 MHz) Crss pF pF SWITCHING CHARACTERISTICS Rise Time (See Figure 2) (ID(on) = 6.0 mAdc) (ID(on) = 3.0 mAdc) MPF4392 MPF4393 tr Fall Time (See Figure 4) (VGS(off) = 7.0 Vdc) (VGS(off) = 5.0 Vdc) MPF4392 MPF4393 Turn–On Time (See Figures 1 and 2) (ID(on) = 6.0 mAdc) (ID(on) = 3.0 mAdc) MPF4392 MPF4393 Turn–Off Time (See Figures 3 and 4) (VGS(off) = 7.0 Vdc) (VGS(off) = 5.0 Vdc) MPF4392 MPF4393 ns tf ns ton ns toff ns TYPICAL SWITCHING CHARACTERISTICS 1000 500 200 RK = RD′ TJ = 25°C 500 MPF4392 VGS(off) = 7.0 V MPF4393 = 5.0 V 200 t r , RISE TIME (ns) t d(on), TURN–ON DELAY TIME (ns) 1000 100 50 20 10 5.0 RK = 0 50 20 10 5.0 7.0 10 2.0 3.0 ID, DRAIN CURRENT (mA) 20 30 1.0 0.5 0.7 1.0 50 500 200 MPF4392 VGS(off) = 7.0 V MPF4393 = 5.0 V 200 t f , FALL TIME (ns) t d(off) , TURN–OFF DELAY TIME (ns) 20 30 50 1000 TJ = 25°C 100 RK = RD′ 20 10 RK = 0 RK = RD′ TJ = 25°C MPF4392 VGS(off) = 7.0 V MPF4393 = 5.0 V 100 50 20 RK = 0 10 5.0 2.0 2.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 Figure 3. Turn–Off Delay Time 2 5.0 7.0 10 2.0 3.0 ID, DRAIN CURRENT (mA) Figure 2. Rise Time 500 1.0 0.5 0.7 1.0 RK = 0 2.0 1000 5.0 MPF4392 VGS(off) = 7.0 V MPF4393 = 5.0 V 100 Figure 1. Turn–On Delay Time 50 TJ = 25°C 5.0 2.0 1.0 0.5 0.7 1.0 RK = RD′ 30 50 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 Figure 4. Fall Time Motorola Small–Signal Transistors, FETs and Diodes Device Data –VDD RD SET VDS(off) = 10 V INPUT RK RT RGEN 50 Ω OUTPUT RGG 50 Ω 50 Ω VGG VGEN INPUT PULSE tr ≤ 0.25 ns tf ≤ 0.5 ns PULSE WIDTH = 2.0 µs DUTY CYCLE ≤ 2.0% RGG & RK RD′ = RD(RT + 50) RD + RT + 50 15 20 MPF4392 10 C, CAPACITANCE (pF) y fs , FORWARD TRANSFER ADMITTANCE (mmhos) Figure 5. Switching Time Test Circuit NOTE 1 The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply Voltage (–VGG). The Drain–Source Voltage (VDS) is slightly lower than Drain Supply Voltage (VDD) due to the voltage divider. Thus Reverse Transfer Capacitance (Crss) or Gate–Drain Capacitance (Cgd) is charged to VGG + VDS. During the turn–on interval, Gate–Source Capacitance (C gs) discharges through the series combination of RGen and RK. Cgd must discharge to VDS(on) through RG and RK in series with the parallel combination of effective load impedance (R′D) and Drain–Source Resistance (rds). During the turn–off, this charge flow is reversed. Predicting turn–on time is somewhat difficult as the channel resistance rds is a function of the gate–source voltage. While Cgs discharges, VGS approaches zero and rds decreases. Since Cgd discharges through rds, turn–on time is non–linear. During turn–off, the situation is reversed with rds increasing as Cgd charges. The above switching curves show two impedance conditions: 1) RK is equal to RD′ which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) RK = 0 (low impedance) the driving source impedance is that of the generator. 10 MPF4393 7.0 5.0 Tchannel = 25°C VDS = 15 V 3.0 Cgs 7.0 5.0 Cgd Tchannel = 25°C (Cds IS NEGLIGIBLE) 3.0 2.0 1.5 2.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 1.0 0.03 0.05 50 0.1 Figure 6. Typical Forward Transfer Admittance 30 2.0 IDSS = 10 160 mA 25 mA 50 mA 75 mA 100 mA 125 mA rds(on) , DRAIN–SOURCE ON–STATE RESISTANCE (NORMALIZED) rds(on) , DRAIN–SOURCE ON–STATE RESISTANCE (OHMS) 10 Figure 7. Typical Capacitance 200 120 80 40 Tchannel = 25°C 0 0.3 0.5 1.0 3.0 5.0 VR, REVERSE VOLTAGE (VOLTS) 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATE–SOURCE VOLTAGE (VOLTS) 7.0 8.0 Figure 8. Effect of Gate–Source Voltage On Drain–Source Resistance Motorola Small–Signal Transistors, FETs and Diodes Device Data 1.8 ID = 1.0 mA VGS = 0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 –70 –40 110 –10 20 50 80 Tchannel, CHANNEL TEMPERATURE (°C) 140 170 Figure 9. Effect of Temperature On Drain–Source On–State Resistance 3 90 10 Tchannel = 25°C 80 70 8.0 7.0 rDS(on) @ VGS = 0 60 50 NOTE 2 9.0 6.0 VGS(off) 5.0 40 4.0 30 3.0 20 2.0 10 1.0 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 IDSS, ZERO–GATE VOLTAGE DRAIN CURRENT (mA) V GS , GATE–SOURCE VOLTAGE (VOLTS) r ds(on), DRAIN–SOURCE ON–STATE RESISTANCE (OHMS) 100 The Zero–Gate–Voltage Drain Current (IDSS), is the principle determinant of other J–FET characteristics. Figure 10 shows the relationship of Gate–Source Off Voltage (VGS(off)) and Drain–Source On Resistance (rds(on)) to IDSS. Most of the devices will be within ±10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. For example: Unknown rds(on) and VGS range for an MPF4392 The electrical characteristics table indicates that an MPF4392 has an IDSS range of 25 to 75 mA. Figure 10 shows rds(on) = 52 Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA. The corresponding VGS values are 2.2 volts and 4.8 volts. Figure 10. Effect of IDSS On Drain–Source Resistance and Gate–Source Voltage 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D X X G J H V C SECTION X–X 1 N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE 5 Motorola reserves the right to make changes without further notice to any products herein. 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