Order this document by MPS6601/D SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage Value Unit VCEO Collector – Base Voltage Vdc VCBO MPS6601/6651 MPS6602/6652 Emitter – Base Voltage Vdc 25 30 VEBO 4.0 Vdc Collector Current — Continuous IC 1000 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit RqJA(1) 200 °C/W RqJC 83.3 °C/W Operating and Storage Junction Temperature Range *Motorola Preferred Device 25 40 MPS6601/6651 MPS6602/6652 1 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 25 40 — — 25 40 — — 4.0 — — — 0.1 0.1 — — 0.1 0.1 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0) V(BR)CEO MPS6601/6651 MPS6602/6652 Vdc V(BR)CBO MPS6601/6651 MPS6602/6652 Emitter – Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = 25 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) MPS6601/6651 MPS6602/6652 Collector Cutoff Current (VCB = 25 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0) MPS6601/6651 MPS6602/6652 Vdc Vdc µAdc ICES µAdc ICBO 1. RqJA is measured with the device soldered into a typical printed circuit board. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 50 50 30 — — — Unit ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) hFE — Collector – Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) VCE(sat) — 0.6 Vdc Base–Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) — 1.2 Vdc fT 100 — MHz Cobo — 30 pF td — 25 ns tr — 30 ns ts — 250 ns tf — 50 ns SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS Delay Time (VCC = 40 Vdc, IC = 500 mAdc, IB1 = 50 mAdc, 300 ns Duty Cycle) tp Rise Time w Storage Time Fall Time TURN–ON TIME TURN–OFF TIME VCC –1.0 V VCC +VBB +40 V 5.0 ms 100 +40 V RL 100 OUTPUT +10 V Vin tr = 3.0 ns OUTPUT RB Vin 0 * CS 5.0 mF RL t 6.0 pF RB * CS 5.0 mF 100 t 6.0 pF 100 5.0 ms tr = 3.0 ns * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data NPN PNP 300 200 h FE , CURRENT GAIN h FE , CURRENT GAIN 200 100 70 VCE = 1.0 V TJ = 25°C 50 30 100 VCE = 10 V TJ = 25°C f = 30 MHz 30 10 100 200 1000 300 200 100 70 50 VCE = –10 V TJ = 25°C f = 30 MHz 30 –10 –100 –200 –1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. Current Gain Bandwidth Product Figure 5. Current Gain Bandwidth Product –1.0 TJ = 25°C VBE(SAT) @ IC/IB = 10 –0.8 V, VOLTAGE (VOLTS) 0.8 V, VOLTAGE (VOLTS) –1000 Figure 3. MPS6651/6652 DC Current Gain 70 VBE(ON) @ VCE = 1.0 V 0.6 0.4 0 1.0 –100 Figure 2. MPS6601/6602 DC Current Gain 100 0.2 VCE = –1.0 V TJ = 25°C IC, COLLECTOR CURRENT (mA) 200 1.0 50 IC, COLLECTOR CURRENT (mA) 300 50 70 20 –10 1000 f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) 10 100 100 1000 VBE(SAT) @ IC/IB = 10 VBE(ON) @ VCE = –1.0 V –0.4 –0.2 VCE(SAT) @ IC/IB = 10 10 –0.6 TJ = 25°C 0 –1.0 VCE(SAT) @ IC/IB = 10 –10 –100 –1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. On Voltages Figure 7. On Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 NPN PNP 160 80 TJ = 25°C 60 40 C, CAPACITANCE (pF) C, CAPACITANCE (pF) TJ = 25°C Cib 20 Cob 0 Cob Cib 5.0 1.0 10 15 20 2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 120 80 Cib 40 Cob 0 25 5.0 Cob Cib –5.0 –1.0 Figure 8. Capacitance 8.0 6.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 VCE = 5.0 V f = 1.0 kHz TA = 25°C IC = 100 mA 4.0 2.0 8.0 6.0 IC = 100 mA 4.0 0 10 100 1k 10 k 100 10 1k 10 k Rs, SOURCE RESISTANCE (OHMS) Rs, SOURCE RESISTANCE (OHMS) Figure 10. MPS6601/6602 Noise Figure Figure 11. MPS6651/6652 Noise Figure 10 k 10 k td @ VBE(off) = 0.5 V VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 1k td @ VBE(off) = –0.5 V VCC = –40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 5k 3k 1k t, TIME (NS) 5k 3k t, TIME (NS) VCE = –5.0 V f = 1.0 kHz TA = 25°C 2.0 0 500 ts 200 500 ts 200 100 100 4 –25 –5.0 Figure 9. Capacitance 10 50 tf 20 tr 10 –10 –15 –20 –2.0 –3.0 –4.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 50 100 200 tf 50 500 tr td 20 td 1000 10 –10 –20 –50 –100 –200 –500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 12. MPS6601/6602 Switching Times Figure 13. MPS6651/6652 Switching Times –1000 Motorola Small–Signal Transistors, FETs and Diodes Device Data PNP –0.8 R qVB , TEMPERATURE COEFFICIENT (mV/° C) R qVB , TEMPERATURE COEFFICIENT (mV/° C) NPN –1.2 –1.6 RqVB for VBE –2.0 –2.4 –2.8 1.0 10 100 1000 –1.6 RqVB for VBE –2.0 –2.4 –2.8 –1.0 –10 –100 –1000 IC, COLLECTOR CURRENT (mA) Figure 14. Base–Emitter Temperature Coefficient Figure 15. Base–Emitter Temperature Coefficient –1 k 1.0 MS 500 TC = 25°C 200 1.0 MS –500 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) –1.2 IC, COLLECTOR CURRENT (mA) 1k TC = 25°C –200 1.0 s 100 1.0 s –100 50 MPS6601 MPS6602 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 20 10 1.0 MPS6651 –50 MPS6652 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT –20 –10 2.0 5.0 10 40 20 –1.0 –2.0 –5.0 –10 –20 –40 VCE, COLLECTOR–EMITTER VOLTAGE VCE, COLLECTOR–EMITTER VOLTAGE Figure 16. Safe Operating Area Figure 17. Safe Operating Area 1.0 –1.0 TJ = 25°C VCE , COLLECTOR VOLTAGE (VOLTS) VCE , COLLECTOR VOLTAGE (VOLTS) –0.8 0.8 0.6 IC = 1000 mA 0.4 IC = 50 mA 0.2 IC = 10 mA IC = 100 mA IC = 500 mA IC = 250 mA 0 0.01 0.1 1.0 10 100 TJ = 25°C –0.8 –0.6 IC = –1000 mA –0.4 –0.2 0 –0.01 IC = –10 mA IC = –50 mA –0.1 IC = –100 mA IC = –500 mA IC = –250 mA –1.0 –10 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 18. MPS6601/6602 Saturation Region Figure 19. MPS6651/6652 Saturation Region Motorola Small–Signal Transistors, FETs and Diodes Device Data –100 5 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 P(pk) SINGLE PULSE t1 0.01 SINGLE PULSE 0.03 t2 0.02 0.01 0.001 RθJC(t) = (t) θJC RθJC = 100°C/W MAX RθJA(t)d = r(t) θJA RθJA = 357°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) θJC(t) DUTY CYCLE, D = t1/t2 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 t, TIME (SECONDS) Figure 20. Thermal Response 6 Motorola Small–Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 7 Motorola reserves the right to make changes without further notice to any products herein. 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