ONSEMI MPS6725

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by MPS6724/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR 3
BASE
2
EMITTER 1
MAXIMUM RATINGS
Rating
Symbol
MPS6724
MPS6725
Unit
Collector – Emitter Voltage
VCES
40
50
Vdc
Collector – Base Voltage
VCBO
50
60
Vdc
Emitter – Base Voltage
2
VEBO
12
Vdc
Collector Current — Continuous
IC
1000
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
Watts
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Operating and Storage Junction
Temperature Range
1
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
40
50
—
—
50
60
—
—
12
—
—
—
100
100
—
100
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
V(BR)CES
MPS6724
MPS6725
V(BR)CBO
MPS6724
MPS6725
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
1. Pulse Test: Pulse Width
Vdc
V(BR)EBO
Vdc
ICBO
MPS6724
MPS6725
IEBO
Vdc
nAdc
nAdc
v 300 ms; Duty Cycle v 2.0%.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1997
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
25,000
4,000
—
40,000
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
(IC = 1000 mAdc, VCE = 5.0 Vdc)
hFE
—
Collector – Emitter Saturation Voltage
(IC = 1000 mAdc, IB = 2.0 mAdc)
VCE(sat)
—
1.5
Vdc
Base – Emitter On Voltage
(IC = 1000 mAdc, VCE = 5.0 Vdc)
VBE(on)
—
2.0
Vdc
fT
100
1000
MHz
Ccb
—
10
pF
SMALL– SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
TYPICAL CHARACTERISTICS
CURRENT LIMIT
DUTY CYCLE ≤ 10%
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
I C , COLLECTOR CURRENT (mA)
3.0 k
2.0 k
100 ms
1.0 ms
1.0 k
1.0 s
500
TA = 25°C
200
1.5
TC = 25°C
2.0
5.0
20
10
30
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region — Safe Operating
Area
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)
200 k
h FE , DC CURRENT GAIN
TJ = 125°C
100 k
70 k
50 k
25°C
30 k
20 k
10 k
7.0 k
5.0 k
–55°C
3.0 k
2.0 k
5.0 7.0 10
VCE = 5.0 V
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
2
200 300
500
3.0
TJ = 25°C
IC =
10 mA
2.5
IC =
50 mA
IC =
500 mA
IC =
250 mA
2.0
1.5
1.0
0.5
0.1
0.2
0.5 1.0 2.0
5.0
10
20
50
100 200
500 1000
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
Motorola Small–Signal Transistors, FETs and Diodes Device Data
q V , TEMPERATURE COEFFICIENTS (mV/ °C)
1.6
TJ = 25°C
V, VOLTAGE (VOLTS)
1.4
VBE(sat) @ IC/IB = 1000
1.2
VBE(on) @ VCE = 5.0 V
1.0
0.8
0.6
VCE(sat) @ IC/IB = 1000
5.0 7.0 10
20
50
30
200 300
70 100
–1.0
–2.0
*APPLIES FOR IC/IB ≤ hFE/3.0
–55°C TO 25°C
–3.0
25°C TO 125°C
–4.0
qVB FOR VBE
–5.0
–55°C TO 25°C
–6.0
500
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mA)
200 300
500
20
VCE = 5.0 V
TJ = 25°C
f = 100 MHz
TJ = 25°C
C, CAPACITANCE (pF)
h FE , SMALL–SIGNAL CURRENT GAIN
70 100
Figure 5. Temperature Coefficients
4.0
1.0
0.8
0.6
0.4
0.2
0.5
50
30
IC, COLLECTOR CURRENT (mA)
Figure 4. “ON” Voltages
2.0
25°C TO 125°C
*qVC FOR VCE(sat)
10
7.0
Cibo
5.0
Cobo
3.0
2.0
1.0
2.0
5.0
10
20
50
100
200
500
0.04
0.1
0.2
0.4
1.0
2.0
4.0
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. High Frequency Current Gain
Figure 7. Capacitance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
10
20
40
3
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
A
B
R
SEATING
PLANE
P
L
F
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
K
X X
D
G
H
J
V
1 2 3
N C
SECTION X–X
N
CASE 029–05
(TO–226AE)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.135
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.56
0.41
0.48
1.15
1.39
2.42
2.66
0.46
0.61
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
3.43
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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4
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MPS6724/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data