ON Semiconductor Amplifier Transistors MAXIMUM RATINGS Symbol MPS8098 MPS8598 MPS8099 MPS8599 Unit Collector–Emitter Voltage VCEO 60 80 Vdc Collector–Base Voltage VCBO 60 80 Vdc Emitter–Base Voltage VEBO 6.0 5.0 Vdc Rating Collector Current – Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg –55 to +150 °C NPN MPS8098 MPS8099* PNP MPS8598 MPS8599* Voltage and current are negative for PNP transistors *ON Semiconductor Preferred Device Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W 1 2 3 CASE 29–11, STYLE 1 TO–92 (TO–226AA) COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 September, 2001 – Rev. 2 1 Publication Order Number: MPS8098/D NPN MPS8098 MPS8099 PNP MPS8598 MPS8599 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 60 80 — — 60 80 — — 6.0 5.0 — — — 0.1 — — 0.1 0.1 — — 0.1 0.1 100 100 75 300 — — — — 0.4 0.3 0.5 0.6 0.7 0.8 150 — — — 6.0 8.0 — — 25 30 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V(BR)CEO MPS8098, MPS8598 MPS8099, MPS8599 Vdc V(BR)CBO MPS8098, MPS8598 MPS8099, MPS8599 Vdc V(BR)EBO MPS8098, MPS8099 MPS8598, MPS8599 Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICES Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) MPS8098, MPS8598 MPS8099, MPS8599 Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) MPS8098, MPS8099 MPS8598, MPS8599 Vdc µAdc µAdc ICBO µAdc IEBO 1. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) hFE Collector–Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) Base–Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) — VCE(sat) Vdc VBE(on) MPS8098, MPS8598 MPS8099, MPS8599 Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo MPS8098, MPS8099 MPS8598, MPS8599 pF Cibo MPS8098, MPS8099 MPS8598, MPS8599 1. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. http://onsemi.com 2 MHz pF r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE NPN MPS8098 MPS8099 PNP MPS8598 MPS8599 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 D = 0.5 0.2 0.1 0.05 P(pk) 0.01 0.02 SINGLE PULSE t1 SINGLE PULSE 0.03 t2 0.02 0.01 ZθJC(t) = r(t) • RθJC TJ(pk) - TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) - TA = P(pk) ZθJA(t) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) DUTY CYCLE, D = t1/t2 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k t, TIME (ms) Figure 1. MPS8098, MPS8099, MPS8598 and MPS8599 Thermal Response TURN-ON TIME -1.0 V 5.0 s 100 +10 V 0 Vin tr = 3.0 ns TURN-OFF TIME VCC RL 100 OUTPUT Vin RB * CS 6.0 pF 5.0 F VCC +40 V +VBB +40 V * CS 6.0 pF 100 100 5.0 s tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 2. Switching Time Test Circuits 3 OUTPUT RB 5.0 F http://onsemi.com RL NPN MPS8098 MPS8099 PNP MPS8598 MPS8599 PNP 300 TJ = 25°C 200 5.0 V VCE = 1.0 V 100 70 50 30 1.0 2.0 3.0 5.0 7.0 10 20 30 f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) NPN 50 70 100 300 TJ = 25°C 200 -5.0 V VCE = -1.0 V 100 70 50 30 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. MPS8098/99 Current–Gain — Bandwidth Product Figure 4. MPS8598/99 Current–Gain — Bandwidth Product 40 40 25°C TTJJ==25°C TJ = 25°C 20 Cibo 10 8.0 6.0 4.0 1.0 k 700 500 0.2 0.5 1.0 2.0 5.0 20 10 50 6.0 Cobo 100 2.0 -0.1 -0.2 -0.5 -1.0 -5.0 -50 -100 -10 -20 Figure 5. MPS8098/99 Capacitance Figure 6. MPS8598/99 Capacitance 1.0 k 700 500 ts t, TIME (ns) tf 30 200 tf 100 70 50 tr 30 20 20 20 tr td @ VBE(off) = 0.5 V 30 50 70 100 VCC = -40 V IC/IB = 10 IB1 = IB2 TJ = 25°C ts 300 100 70 50 10 -2.0 VR, REVERSE VOLTAGE (VOLTS) 200 10 10 8.0 VR, REVERSE VOLTAGE (VOLTS) VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 300 Cibo 4.0 Cobo 2.0 0.1 t, TIME (ns) C, CAPACITANCE (pF) C, CAPACITANCE (pF) 20 200 10 td @ VBE(off) = -0.5 V -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. MPS8098/99 Switching Times Figure 8. MPS8598/99 Switching Times http://onsemi.com 4 -200 NPN MPS8098 MPS8099 PNP MPS8598 MPS8599 PNP 1.0 k 700 500 -1.0 k -700 -500 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) NPN 300 -300 200 -200 100 70 50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 30 20 10 1.0 -100 -70 -50 MPS8098 MPS8099 DUTY CYCLE ≤ 10% 2.0 3.0 5.0 7.0 10 20 50 30 -20 -10 70 100 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPS8598 DUTY CYCLE ≤ 10% MPS8599 -30 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 9. MPS8098/99 Active–Region Safe Operating Area Figure 10. MPS8598/99 Active–Region Safe Operating Area 400 300 TJ = 125°C h FE, DC CURRENT GAIN 25°C 200 -55°C 100 VCE = 5.0 V 80 60 40 0.2 0.3 0.5 1.0 1.0 2.0 3.0 5.0 10 20 30 50 25°C 100 70 VCE = -5.0 V 50 30 -0.2 100 200 -55°C -0.5 -1.0 -2.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) Figure 11. MPS8098/99 DC Current Gain Figure 12. MPS8598/99 DC Current Gain 1.0 TJ = 25°C TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 0 0.2 -5.0 IC, COLLECTOR CURRENT (mA) 0.8 V, VOLTAGE (VOLTS) 200 V, VOLTAGE (VOLTS) h FE , DC CURRENT GAIN TJ = 125°C 0.5 1.0 2.0 5.0 10 20 50 100 200 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 13. MPS8098/99 “ON” Voltages Figure 14. MPS8598/99 “ON” Voltages http://onsemi.com 5 200 NPN MPS8098 MPS8099 PNP MPS8598 MPS8599 2.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) PNP TJ = 25°C IC = 50 mA IC = 20 mA 1.6 IC = 200 mA IC = 100 mA 1.2 0.8 0.4 IC = 10 mA 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC = 50 mA IC = 20 mA IC = 100 mA IC = 200 mA 1.2 0.8 0.4 TJ = 25°C 0 0.05 0.1 0.02 0.2 0.5 1.0 2.0 10 5.0 Figure 16. MPS8598/99 Collector Saturation Region RVB FOR VBE -55°C TO 125°C -2.2 -2.6 0.2 IC = 10 mA Figure 15. MPS8098/99 Collector Saturation Region -1.4 -3.0 1.6 IB, BASE CURRENT (mA) -1.0 -1.8 2.0 IB, BASE CURRENT (mA) R VB , TEMPERATURE COEFFICIENT (mV/° C) R VB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) NPN 0.5 1.0 2.0 5.0 10 20 50 100 200 -1.0 -1.4 -1.8 RVB FOR VBE -55°C TO 125°C -2.2 -2.6 -3.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. MPS8098/99 Base–Emitter Temperature Coefficient Figure 18. MPS8598/99 Base–Emitter Temperature Coefficient http://onsemi.com 6 20 200 NPN MPS8098 MPS8099 PNP MPS8598 MPS8599 PACKAGE DIMENSIONS CASE 029–11 (TO–226AA) ISSUE AD A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE P L F K X X DIM A B C D F G H J K L N P R D G H J R 1 2 3 N C SECTION X–X N YLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 7 INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --- NPN MPS8098 MPS8099 PNP MPS8598 MPS8599 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800–282–9855 Toll Free USA/Canada http://onsemi.com 8 MPS8098/D