ONSEMI MPSA64

Order this document
by MPSA62/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR 3
MPSA55, MPSA56
BASE
2
For Specifications,
See MPSA05, MPSA06 Data
*Motorola Preferred Device
EMITTER 1
MAXIMUM RATINGS
Symbol
MPSA62
MPSA63
MPSA64
Unit
Collector – Emitter Voltage
VCES
–20
–30
Vdc
Collector – Base Voltage
VCBO
–20
–30
Vdc
Emitter – Base Voltage
VEBO
–10
Vdc
Collector Current — Continuous
IC
–500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
Rating
Operating and Storage Junction
Temperature Range
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
–20
–30
—
—
—
—
–100
–100
—
–100
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –100 µAdc, VBE = 0)
Collector Cutoff Current
(VCB= –15 Vdc, IE = 0)
(VCB = –30 Vdc, IE = 0)
V(BR)CES
MPSA62
MPSA63, MPSA64
Vdc
ICBO
MPSA62
MPSA63, MPSA64
Emitter Cutoff Current
(VEB = –10 Vdc, IC = 0)
IEBO
nAdc
nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
MPSA63
MPSA64
MPSA62
5,000
10,000
20,000
—
—
—
MPSA63
MPSA64
10,000
20,000
—
—
—
—
–1.0
–1.5
—
—
–1.4
–2.0
125
—
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = –10 mAdc, VCE = –5.0 Vdc)
(IC = –100 mAdc, VCE = –5.0 Vdc)
hFE
Collector – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.01 mAdc)
(IC = –100 mAdc, IB = –0.1 mAdc)
MPSA62
MPSA63, MPSA64
Base – Emitter On Voltage
(IC = –10 mAdc, VCE = –5.0 Vdc)
(IC = –100 mAdc, VCE = –5.0 Vdc)
MPSA62
MPSA63, MPSA64
—
VCE(sat)
Vdc
VBE(on)
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2)
(IC = –100 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width
2. fT = |hfe| S ftest.
2
v 300 ms; Duty Cycle v 2.0%.
fT
MHz
MPSA63, MPSA64
Motorola Small–Signal Transistors, FETs and Diodes Device Data
hFE , DC CURRENT GAIN (X1.0 K)
200
TA = 125°C
100
70
50
–10 V
30
25°C
VCE = –2.0 V
–5.0 V
20
10
7.0
5.0
–55°C
3.0
2.0
–0.3
–0.5
–0.7
–1.0
–2.0
–3.0
–5.0
–7.0
–10
–20
–30
–50
–70
–100
–200
–300
IC, COLLECTOR CURRENT (mA)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
–2.0
TA = 25°C
VBE(sat) @ IC/IB = 100
V, VOLTAGE (VOLTS)
–1.6
–1.2
VBE(on) @ VCE = –5.0 V
–0.8
VCE(sat) @ IC/IB = 1000
IC/IB = 100
–0.4
0
–0.3 –0.5
–1.0
–2 –3 –5
–10 –20 –30 –50
IC, COLLECTOR CURRENT (mA)
–100 –200 –300
–2.0
TA = 25°C
–1.8
–1.6
–1.4
IC = –10 mA –50 mA –100 mA –175 mA
–1.2
–1.0
–0.8
–0.6
–0.1–0.2 –0.5 –1 –2
Figure 2. “On” Voltage
–1000
VCE = –5.0 V
f = 100 MHz
TA = 25°C
IC, COLLECTOR CURRENT (mA)
|h FE |, HIGH FREQUENCY CURRENT GAIN
–5 –10 –20 –50 –100–200–500 –1K–2K –5K–10K
IB, BASE CURRENT (µA)
Figure 3. Collector Saturation Region
10
4.0
3.0
2.0
–300 mA
1.0
0.4
0.2
0.1
–1.0 –2.0
–5.0
–10
–20
–50
–100 –200
–500
–1K
100 µs
1.0 ms
–300
–200
–100
–50
–20
–10
–1.0
TA = 25°C
1.0 s
TC = 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
(DUTY CYCLE ≤ 10%) MPSA62
MPSA63
–2.0
–4.0 –6.0
–10
–20
–40 –60
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR VOLTAGE (VOLTS)
Figure 4. High Frequency Current Gain
Figure 5. Active Region, Safe Operating Area
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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4
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*MPSA62/D*
MPSA62/D
Motorola Small–Signal Transistors, FETs and Diodes Device Data