TSC LL914B-L1 500mw high speed smd switching diode Datasheet

LL4148/LL4448/LL914B
500mW High Speed SMD Switching Diode
Small Signal Diode
Mini-MELF (LL34)
HERMETICALLY SEALED GLASS
Features
—Fast switching device(T rr<4.0nS)
—Surface device type mounting
—Moisture sensitivity level 1
—Matte Tin (Sn) Terminal Finish
—Pb free version and RoHS compliant
—All External Surfaces are Corrosion Resistant and
Leads are Readily Solderable
Dimensions
Mechanical Data
Unit (mm)
Unit (inch)
Min
Max
Min
Max
—Case : Mini-MELF Package (JEDEC DO-213AC)
A
3.30
3.70
0.130
0.146
—High temperature soldering guaranteed : 270°C/10s
B
1.40
1.60
0.055
0.063
—Polarity : Indicated by cathode band
C
0.25
0.40
0.010
0.016
—Weight : approx. 31 mg
D
1.25
1.40
0.049
0.055
Ordering Information
Suggested PAD Layout
Package
Part No.
Packing
LL34
LL4148 L0
10K / 13" Reel
LL34
LL4448 L0
10K / 13" Reel
LL34
LL914B L0
10K / 13" Reel
LL34
LL4148 L1
2.5K / 7" Reel
LL34
LL4448 L1
2.5K / 7" Reel
LL34
LL914B L1
2.5K / 7" Reel
1.25
0.049
2.00
2.50
0.079
0.098
5.00
0.197
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Symbol
Value
Units
PD
500
mW
V
VRRM
100
Reverse Voltage
VR
75
V
Peak Forward Surge Current (Note 1) tp=1us
IFSM
2
A
IFM
450
mA
IF(AV)
150
mA
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Forward Current
Mean Forward Current
Forward Continuous Current
Repetitive peak Forward Current
Thermal Resistance (Junction to Ambient) (Note 2)
Junction and Storage Temperature Range
IF
300
mA
IFRM
500
mA
RθJA
300
°C/W
TJ, TSTG
-65 to + 200
°C
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)
Notes:2. Valid provided that electrodes are kept at ambient temperature
Version : G12
LL4148/LL4448/LL914B
500mW High Speed SMD Switching Diode
Small Signal Diode
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Electrical Characteristics
Type Number
Symbol
IR=100uA
Reverse Breakdown Voltage
Min
V(BR)
IR=5uA
Max
Units
100
V
75
Forward Voltage
LL4448, LL914B
IF=5.0mA
LL4148
IF=50.0mA
LL4448, LL914B
IF=100.0mA
V
1.0
25
nA
5.0
μA
CJ
4.0
pF
Trr
4.0
ns
IR
VR=75V
VR=0, f=1.0MHz
Junction Capacitance
0.72
1.0
VR=20V
Reverse Leakage Current
0.62
VF
Reverse Recovery Time (Note 3)
Notes:3. Reverse Recovery Test Conditions: I F=IR=10mA, RL=100Ω, IRR=1mA
Tape & Reel specification
TSC label
Carieer Tape
Any Additional Label (If Required)
P0
d
P1
T
E
A
F
C
Symbol
Dimension(mm)
Carrier width
A
1.83 ±0.10
Carrier length
B
3.73 ±0.10
Carrier depth
C
1.80 ±0.10
Sprocket hole
d
1.50 ± 0.10
Item
Top Cover Tape
W
B
Reel outside diameter
D
178 ± 1
330 ± 1
Reel inner diameter
D1
55 Min
100Min
Feed hole width
D2
13.0 ± 0.20
Sprocke hole position
E
1.75 ±0.10
Punch hole position
F
3.50 ±0.05
Sprocke hole pitch
P0
4.00 ±0.10
Embossment center
P1
2.00 ±0.05
Overall tape thickness
T
0.23±0.005
Tape width
W
8.00 ±0.30
Reel width
W1
14.4max
W1
D
D2
D1
Direction of Feed
Version : G12
LL4148/LL4448/LL914B
500mW High Speed SMD Switching Diode
Small Signal Diode
Rating and Sharacteristic Curves
FIG 2 Reverse Current vs Reverse Voltage
FIG 1 Typical Forward Characteristics
100
Ta=25°C
Ta=25°
Reverse Current (uA)
Instantaneous Forward Current (mA)
1500
1200
900
600
10
1
0.1
300
0
0.001
0.01
0.01
0.1
1
10
100
1000
Instantaneous Forward Voltage (V)
0
20
40
60
80
100
120
Reverse Voltage (V)
FIG 3 Admissible Power Dissipation Curve
Power Dissipation (mW)
600
500
400
300
200
100
0
0
50
100
150
200
Ambient Temperature (°C)
Reverse Voltage (V)
FIG 5 Forward Resistance vs. Forward Current
Dynamic Forward Resistance (Ώ)
10000
1000
100
10
1
0
0
0.1
1
10
100
Forward Current (mA)
Version : G12
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