ONSEMI MPSH17

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SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
3
Motorola Preferred Device
1
BASE
2
EMITTER
1
MAXIMUM RATINGS
2
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
15
Vdc
Collector – Base Voltage
VCBO
20
Vdc
Emitter – Base Voltage
VEBO
3.0
Vdc
PD
350
2.81
mW
mW/°C
TJ, Tstg
– 55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
(Printed Circuit Board Mounting)
RqJA
357
°C/W
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
3
CASE 29–04, STYLE 2
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
15
—
—
Vdc
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
20
—
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
3.0
—
—
Vdc
ICBO
—
—
100
nAdc
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
MPSH17
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
25
—
250
—
VCE(sat)
—
—
0.5
—
fT
800
—
—
MHz
Collector–Base Capacitance
(VCB = 10 Vdc, f = 1.0 MHz)
Ccb
0.3
—
0.9
pF
Small–Signal Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
30
—
—
—
Noise Figure
(IC = 5.0 mAdc, VCC = 12 Vdc, RS = 50 ohms, f = 200 MHz)
NF
—
—
6.0
dB
Gpe
—
24
—
dB
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc)
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
FUNCTIONAL TEST
Amplifier Power Gain
(IC = 5.0 mAdc, VCC = 12 Vdc, RS = 50 ohms, f = 200 MHz)
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPSH17
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
Motorola Small–Signal Transistors, FETs and Diodes Device Data
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 2:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
3
MPSH17
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4
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*MPSH17/D*
MPSH17/D
Motorola Small–Signal Transistors, FETs and Diodes Device Data