Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 50 A I C90 TC = 90°C 30 A I CM TC = 25°C, 1 ms 100 A SSOA (RBSOA) VGE = 15 V, T VJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH ICM = 60 @ 0.8 VCES A PC TC = 25°C 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque (M3) 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s °C 300 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V TO-247 AD (IXGH) G C E TO-204 AE (IXGM) C G = Gate, E = Emitter, C = Collector, TAB = Collector Features International standard packages 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C) l l l l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies l BVCES IC = 250 µA, VGE = 0 V 600 VGE(th) IC = 250 µA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V I GES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V V 5 V l l l TJ = 25°C TJ = 125°C 30N60 30N60A 200 1 µA mA ±100 nA 2.5 3.0 V V l Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density l l © 1996 IXYS All rights reserved 91512E (3/96) IXGH 30N60 IXGM 30N60 IXGH 30N60A IXGM 30N60A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs I C = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 8 Cies 16 S 2800 pF 230 pF Cres 70 pF Qg 150 180 nC 35 50 nC 60 90 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90 , VGE = 15 V, VCE = 0.5 VCES Qgc Eoff Inductive load, TJ = 25°°C IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 VCES, RG = Roff = 33 Ω Switching times may increase for VCE (Clamp) > 0.8 • V CES, 30N60A higher TJ or increased RG 30N60A td(on) tri td(on) tri td(off) tfi Eon td(off) tfi Eoff 100 ns 200 ns 500 ns 200 ns 2 mJ Inductive load, TJ = 125°°C 100 ns IC = IC90, VGE = 15 V, L = 300 µH 200 ns 3 VCE = 0.8 VCES, RG = R off = 33 Ω 30N60 Remarks: Switching times 30N60A may increase for VCE (Clamp) > 0.8 • VCES , higher 30N60 30N60A TJ or increased RG RthCK 1 = Gate 2 = Collector 3 = Emitter Tab = Collector mJ 600 1000 ns 500 250 1500 800 ns ns 5.5 4.0 RthJC TO-247 AD Outline mJ mJ 0.62 K/W 0.25 TO-204AE Outline K/W IXGH 30N60 and IXGH 30N60A characteristic curves are located on the IXGH 30N60U1 and IXGH 30N60AU1 data sheets. 1 = Gate 2 = Emitter Case = Collector IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025