Vishay BAS386-TR Small signal schottky diode Datasheet

BAS386
Vishay Semiconductors
Small Signal Schottky Diode
Features
• Integrated protection ring against static
discharge
e2
• Very low forward voltage
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
9612315
Applications
• Applications where a very low forward voltage is
required
Mechanical Data
Case: MicroMELF Glass case
Weight: approx. 12 mg
Cathode Band Color: Black
Packaging Codes/Options:
TR3 / 10 k per 13" reel (8 mm tape), 10 k/box
TR / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part
Type differentiation
VR = 50 V
BAS386
Ordering code
Remarks
BAS386-TR3 or BAS386-TR
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Symbol
Value
VR
50
Unit
V
Peak forward surge current
tp = 10 ms
IFSM
5
A
Repetitive peak forward current
tp ≤ 1 s
IFRM
500
mA
IF
200
mA
IFAV
200
mA
Symbol
Value
Unit
RthJA
320
K/W
Tj
125
°C
Tstg
- 65 to + 150
°C
Forward continuous current
Average forward current
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Junction to ambient air
Junction temperature
Storage temperature range
Document Number 85505
Rev. 1.9, 07-Mar-06
Test condition
on PC board
50 mm x 50 mm x 1.6 mm
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BAS386
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
Max
Unit
IF = 0.1 mA
Symbol
VF
Min
Typ.
300
mV
IF = 1 mA
VF
380
mV
IF = 10 mA
VF
450
mV
IF = 30 mA
VF
600
mV
IF = 100 mA
VF
900
mV
Reverse current
VR = 40 V
IR
5
µA
Diode capacitance
VR = 1 V, f = 1 MHz
CD
8
pF
Typical Characteristics
1000
500
V R = 50 V
450
Tj = 150 °C
400
IF - Forward Current (A)
PR - Reverse Power Dissipation (mW)
Tamb = 25 °C, unless otherwise specified
350
PR - Limit
at 100 % V R
300
250
200
150
100
R thJA = 540 K/W
50
0
25
PR - Limit
at 80 % VR
75
100
125
0
Figure 3. Forward Current vs. Forward Voltage
C D - Diode Capacitance (pF)
I R - Reverse Current (µA)
1.5
9
1000
100
10
75
100
125
150
Tj - Junction Temperature (°C)
15830
f = 1 MHz
8
7
6
5
4
3
2
1
0
50
Figure 2. Reverse Current vs. Junction Temperature
2
1.0
10
V R = V RRM
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0.5
V F - Forward Voltage (V)
15829
10000
15828
1
150
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
1
25
Tj = 25 °C
10
0.1
50
Tj - Junction Temperature (°C)
15827
100
0.1
1
10
100
V R - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
Document Number 85505
Rev. 1.9, 07-Mar-06
BAS386
Vishay Semiconductors
0.71
1.3
1.27
0.152
9.9
0.355
25
10
2.5
24
95 10329
Figure 5. Board for RthJA definition (in mm)
2.0 (0.079)
1.8 (0.071)
0.25 (0.010)
0.15 (0.006)
3)
35
(0
ss .05
G
1.2 (0.047)
1.1 (0.043)
<
1.
1 (0.039) surface plan
Glass case
MicroMELF
la
Cathode indification
surface plan
0.6
(0.024)
Package Dimensions in mm (Inches)
> R 2.5 (R 0.098)
Glass
ISO Method E
Wave Soldering
1.4 (0.055)
1.2 (0.047)
Reflow Soldering
0.8 (0.031)
0.8 (0.031)
0.9 (0.035)
0.9 (0.035)
0.8 (0.031)
1.0 (0.039)
2.4 (0.094)
2.8 (0.110)
Document No.: 6.560-5007.01-4
Rev. 11, 07.Feb.2005
9612072
Document Number 85505
Rev. 1.9, 07-Mar-06
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3
BAS386
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85505
Rev. 1.9, 07-Mar-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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Document Number: 91000
Revision: 18-Jul-08
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