MBRS3100T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Features • • • • • • http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 100 VOLTS Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard−Ring for Stress Protection This is a Pb−Free Device SMC CASE 403 Mechanical Characteristics • Case: Epoxy, Molded • Weight: 217 mg (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Notch in Plastic Body Indicates Cathode Lead ESD Ratings: Machine Model = C Human Body Model = 3B MARKING DIAGRAM AYWW B310G G B310 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (At Rated VR, TL = 100°C) IF(AV) 3.0 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 130 A Operating Junction Temperature Range (Note 1) TJ − 65 to +175 °C RqJL 11 °C/W ORDERING INFORMATION Device Package Shipping† MBRS3100T3G SMC (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Lead Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. © Semiconductor Components Industries, LLC, 2010 October, 2010 − Rev. 3 1 Publication Order Number: MBRS3100T3/D MBRS3100T3G ELECTRICAL CHARACTERISTICS Rating Symbol Maximum Instantaneous Forward Voltage (Note 2) (iF = 3.0 A, TJ = 25°C) (iF = 6.0 A, TJ = 25°C) (iF = 3.0 A, TJ = 125°C) (iF = 6.0 A, TJ = 125°C) VF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) iR Value Unit V 0.79 0.90 0.62 0.70 mA 0.05 5.0 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 10 75°C 125°C IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 10 25°C 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 75°C 0.3 0.4 0.5 0.6 0.7 0.9 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1 1000 125°C TJ = 25°C 1E−04 1E−05 C, CAPACITANCE (pF) IR, REVERSE CURRENT (A) 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1E−03 75°C 1E−06 25°C 1E−07 1E−08 25°C 1 0.1 0.9 125°C 0 20 40 60 80 100 100 10 0 20 40 60 80 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Typical Capacitance http://onsemi.com 2 100 IF, AVERAGE FORWARD CURRENT (A) 7 RATED VOLTAGE APPLIED RqJL = 11 °C/W TJ = 150°C 6 5 dc 4 3 SQUARE WAVE 2 1 0 90 100 110 120 130 140 150 160 170 Pfo, AVERAGE POWER DISSIPATION (W) MBRS3100T3G 180 4.5 dc 4 3.5 3 SQUARE WAVE 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating − Lead Figure 6. Forward Power Dissipation http://onsemi.com 3 6 MBRS3100T3G PACKAGE DIMENSIONS SMC CASE 403−03 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. 4. 403-01 THRU -02 OBSOLETE, NEW STANDARD 403-03. HE E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 2.92 0.15 5.59 6.60 7.75 0.76 MILLIMETERS NOM MAX 2.13 2.41 0.10 0.15 3.00 3.07 0.23 0.30 5.84 6.10 6.86 7.11 7.94 8.13 1.02 1.27 0.51 REF MIN 0.075 0.002 0.115 0.006 0.220 0.260 0.305 0.030 INCHES NOM 0.084 0.004 0.118 0.009 0.230 0.270 0.313 0.040 0.020 REF MAX 0.095 0.006 0.121 0.012 0.240 0.280 0.320 0.050 A L L1 c A1 SOLDERING FOOTPRINT* 4.343 0.171 3.810 0.150 2.794 0.110 SCALE 4:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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