PHILIPS BAS82 Schottky barrier diode Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
lfpage
M3D121
BAS81; BAS82; BAS83
Schottky barrier diodes
Product specification
Supersedes data of 1996 Sep 30
1998 Jun 24
Philips Semiconductors
Product specification
Schottky barrier diodes
BAS81; BAS82; BAS83
FEATURES
DESCRIPTION
• Low forward voltage
Planar Schottky barrier diode with an
integrated protection ring against
static discharges. This surface
mounted diode is encapsulated in a
• High breakdown voltage
• Guard ring protected
• Hermetically-sealed small SMD
package
• Low diode capacitance.
k
handbook, halfpage
hermetically sealed SOD80C glass
SMD package with tin-plated metal
discs at each end. It is suitable for
“automatic placement” and as such it
can withstand immersion soldering.
a
APPLICATIONS
• Ultra high-speed switching
MAM190
• Voltage clamping
Cathode indicated by a grey band.
• Protection circuits
• Blocking diodes.
Fig.1 Simplified outline (SOD80C), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VR
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
continuous reverse voltage
BAS81
−
40
V
BAS82
−
50
V
BAS83
−
60
V
−
30
mA
IF
continuous forward current
IFRM
repetitive peak forward current
tp ≤ 1 s; δ ≤ 0.5
−
150
mA
IFSM
non-repetitive peak forward current
tp = 1 s
−
500
mA
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
125
°C
1998 Jun 24
2
Philips Semiconductors
Product specification
Schottky barrier diodes
BAS81; BAS82; BAS83
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
see Fig.2
IF = 0.1 mA
330
mV
IF = 1 mA
410
mV
IF = 15 mA
1
V
IR
reverse current
VR = VRmax; see Fig.3
200
nA
Cd
diode capacitance
f = 1 MHz; VR = 2 V; see Fig.4
1.6
pF
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
Note
1. Refer to SOD80 standard mounting conditions.
1998 Jun 24
3
VALUE
UNIT
320
K/W
Philips Semiconductors
Product specification
Schottky barrier diodes
BAS81; BAS82; BAS83
GRAPHICAL DATA
MGC690
2
10halfpage
handbook,
MGC689
4
10halfpage
handbook,
IR
(nA)
IF
(mA)
(1)
10 3
(1) (2) (3)
10 2
10
(2)
10
1
1
(3)
10 −1
(1) (2) (3)
10 −1
0
0.2
0.4
0.6
0.8
10 −2
1.0
VF (V)
0
20
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.2
Fig.3
Forward current as a function of forward
voltage; typical values.
MGC688
2.0
Cd
(pF)
1.5
1.0
0.5
0
0
15
30
45
60
VR (V)
f = 1 MHz.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
1998 Jun 24
4
40
VR (V)
60
Reverse current as a function of reverse
voltage; typical values.
Philips Semiconductors
Product specification
Schottky barrier diodes
BAS81; BAS82; BAS83
PACKAGE OUTLINE
Hermetically sealed glass surface mounted package; 2 connectors
k
SOD80C
a
(1)
D
L
L
H
DIMENSIONS (mm are the original dimensions)
0
UNIT
D
H
L
mm
1.60
1.45
3.7
3.3
0.3
1
2 mm
scale
Note
1. The marking band indicates the cathode.
REFERENCES
OUTLINE
VERSION
IEC
SOD80C
100H01
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-06-20
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jun 24
5
Philips Semiconductors
Product specification
Schottky barrier diodes
BAS81; BAS82; BAS83
NOTES
1998 Jun 24
6
Philips Semiconductors
Product specification
Schottky barrier diodes
BAS81; BAS82; BAS83
NOTES
1998 Jun 24
7
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SCA60
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Date of release: 1998 Jun 24
Document order number:
9397 750 04038
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