VISHAY Si5855DC

Si5855DC
Vishay Siliconix
P-Channel 1.8 V (G-S) MOSFET with Schottky Diode
FEATURES
MOSFET PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
ID (A)
0.110 at VGS = - 4.5 V
- 3.6
0.160 at VGS = - 2.5 V
- 3.0
0.240 at VGS = - 1.8 V
- 2.4
SCHOTTKY PRODUCT SUMMARY
VKA (V)
Vf (V)
Diode Forward Voltage
IF (A)
20
0.375 V at 1 A
1.0
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Ultra Low Vf Schottky
• Si5853DC Pin Compatible
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Charging Circuit in Portable Devices
1206-8 ChipFET®
S
K
D
A
1
A
K
A
K
G
S
Marking Code
D
G
JB
XXX
Lot Traceability
and Date Code
D
Part # Code
Bottom View
Ordering Information: Si5855DC-T1-E3 (Lead (Pb)-free)
Si5855DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage (MOSFET)
VDS
Reverse Voltage (Schottky)
VKA
20
Gate-Source Voltage (MOSFET)
VGS
±8
Continuous Drain Current (TJ = 150 °C) (MOSFET)a
TA = 25 °C
TA = 85 °C
ID
- 20
- 3.6
Continuous Source Current (MOSFET Diode Conduction)a
IS
Average Forward Current (Schottky)
IF
Pulsed Forward Current (Schottky)
IFM
Maximum Power Dissipation (MOSFET)a
a
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
V
- 2.7
- 2.6
IDM
Pulsed Drain Current (MOSFET)
- 1.9
- 10
- 1.8
- 0.9
7
2.1
1.1
TA = 85 °C
1.1
0.6
1.9
1.1
PD
TA = 85 °C
1.0
TJ, Tstg
A
1.0
TA = 25 °C
TA = 25 °C
Unit
W
0.56
- 55 to 150
260
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72232
S10-0547-Rev. C, 08-Mar-10
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Si5855DC
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Device
t≤5s
Schottky
Junction-to-Ambienta
Steady State
Junction-to-Foot
Symbol
MOSFET
Steady State
MOSFET
RthJA
Schottky
MOSFET
Schottky
RthJF
Typical
Maximum
50
60
54
65
90
110
95
115
30
40
30
40
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
- 0.45
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 250 µA
- 1.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
-5
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltage
a
VDS ≤ − 5 V, VGS = - 4.5 V
- 10
A
VGS = - 4.5 V, ID = - 2.7 A
0.095
0.110
VGS = - 2.5 V, ID = - 2.2 A
0.137
0.160
VGS = - 1.8 V, ID = - 1 A
0.205
0.240
gfs
VDS = - 10 V, ID = - 2.7 A
7
VSD
IS = - 0.9 A, VGS = 0 V
- 0.8
- 1.2
5.1
7.7
RDS(on)
µA
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
VDS = - 10 V, VGS = - 4.5 V, ID = - 2.7 A
tr
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
1.2
1.0
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
IF = - 0.9 A, dI/dt = 100 A/µs
16
25
30
45
30
45
27
40
20
40
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
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Symbol
VF
Irm
CT
Test Conditions
Typ.
Max.
IF = 1 A
Min.
0.34
0.375
IF = 1 A, TJ = 125 °C
0.255
0.290
Vr = 20 V
0.05
0.500
Vr = 20 V, TJ = 85 °C
2
20
Vr = 20 V, TJ = 125 °C
10
100
Vr = 10 V
90
Unit
V
mA
pF
Document Number: 72232
S10-0547-Rev. C, 08-Mar-10
Si5855DC
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
10
TC = - 55 °C
VGS = 5 V thru 3 V
2.5 V
25 °C
8
I D - Drain Current (A)
I D - Drain Current (A)
8
6
2V
4
2
125 °C
6
4
2
1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0.0
4.0
0.5
VDS - Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.6
800
VGS = 1.8 V
Ciss
600
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.5
0.4
0.3
0.2
VGS = 2.5 V
400
200
VGS = 4.5 V
Coss
0.1
Crss
0
0.0
0
2
4
6
8
0
10
8
12
16
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
5
20
1.6
VDS = 10 V
ID = 2.7 A
VGS = 4.5 V
ID = 2.7 A
4
3
2
1
(Normalized)
1.4
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
4
1.2
1.0
0.8
0
0
1
2
3
4
5
6
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 72232
S10-0547-Rev. C, 08-Mar-10
150
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Si5855DC
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 150 °C
TJ = 25 °C
1
0.0
ID = 2.7 A
0.3
0.2
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
50
0.3
40
ID = 250 µA
0.2
Power (W)
VGS(th) Variance (V)
1
VSD - Source-to-Drain Voltage (V)
0.1
30
20
0.0
10
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
0
10-4
150
10-3
10-2
TJ - Temperature (°C)
10-1
1
10
100
600
Time (s)
Threshold Voltage
Single Pulse Power
100
IDM Limited
Limited by RDS(on)*
I D - Drain Current (A)
10
P(t) = 0.001
1
P(t) = 0.01
ID(on)
Limited
P(t) = 0.1
0.1
P(t) = 1
P(t) = 10
DC
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V DS - Drain-to-Source Voltage (V)
* V GS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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Document Number: 72232
S10-0547-Rev. C, 08-Mar-10
Si5855DC
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 90 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
4. Surface Mounted
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
100
I F - Forward Current (A)
I R - Reverse Current (mA)
10
1
0.1
20 V
10 V
0.01
TJ = 150 °C
TJ = 25 °C
1
0.001
0.0001
- 50
- 25
0
25
50
75
100
125
150
0.1
0.0
0.1
0.2
0.3
0.4
0.5
TJ - Junction Temperature (°C)
VF - Forward Voltage Drop (V)
Reverse Current vs. Junction Temperature
Forward Voltage Drop
Document Number: 72232
S10-0547-Rev. C, 08-Mar-10
0.6
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Si5855DC
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
CT - Junction Capacitance (pF)
600
500
400
300
200
100
0
0
4
8
12
16
20
VKA - Reverse Voltage (V)
Capacitance
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Notes:
0.2
PDM
0.1
0.1
t1
0.05
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 95 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
100
10
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72232.
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Document Number: 72232
S10-0547-Rev. C, 08-Mar-10
Package Information
Vishay Siliconix
1206-8 ChipFETR
4
L
D
8
7
6
5
4
1
S
2
e
3
E1
5
6
7
8
4
3
2
1
E
4
b
x
c
Backside View
2X 0.10/0.13 R
C1
A
DETAIL X
NOTES:
1.
All dimensions are in millimeaters.
2.
Mold gate burrs shall not exceed 0.13 mm per side.
3.
Leadframe to molded body offset is horizontal and vertical shall not exceed
0.08 mm.
4.
Dimensions exclusive of mold gate burrs.
5.
No mold flash allowed on the top and bottom lead surface.
MILLIMETERS
Dim
A
b
c
c1
D
E
E1
e
L
S
INCHES
Min
Nom
Max
Min
Nom
Max
1.00
−
1.10
0.039
−
0.043
0.25
0.30
0.35
0.010
0.012
0.014
0.1
0.15
0.20
0.004
0.006
0.008
0
−
0.038
0
−
0.0015
2.95
3.05
3.10
0.116
0.120
0.122
1.825
1.90
1.975
0.072
0.075
0.078
1.55
1.65
1.70
0.061
0.065
0.067
0.65 BSC
0.28
−
0.0256 BSC
0.42
0.011
−
0.55 BSC
0.022 BSC
5_Nom
5_Nom
0.017
ECN: C-03528—Rev. F, 19-Jan-04
DWG: 5547
Document Number: 71151
15-Jan-04
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR 1206-8 ChipFET®
0.093
0.026
0.016
0.010
(0.650)
(0.406)
(0.244)
0.036
(0.914)
0.022
(0.559)
(2.032)
0.080
(2.357)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72593
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000