Diotec BC338-25 Si-epitaxial planartransistor Datasheet

BC 337 / BC 338
NPN
General Purpose Transistors
Si-Epitaxial PlanarTransistors
NPN
Power dissipation – Verlustleistung
625 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1=C 2=B 3=E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BC 337
BC 338
Collector-Emitter-voltage
B open
VCE0
45 V
25 V
Collector-Base-voltage
E open
VCB0
50 V
30 V
Emitter-Base-voltage
C open
VEB0
5V
Power dissipation – Verlustleistung
Ptot
625 mW 1)
Collector current – Kollektorstrom (DC)
IC
800 mA
Junction temp. – Sperrschichttemperatur
Tj
150/C
Storage temperature – Lagerungstemperatur
TS
- 55…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 1 V, IC = 100 mA
Group -16
hFE
100
160
250
Group -25
hFE
160
250
400
Group -40
hFE
250
400
630
Collector-Emitter cutoff current – Kollektorreststrom
1
VCE = 40 V
BC 337
ICES
–
–
200 nA
VCE = 20 V
BC 338
ICES
–
–
200 nA
VCE = 40 V, Tj = 125/C
BC 337
ICES
–
–
10 :A
VCE = 20 V, Tj = 125/C
BC 338
ICES
–
–
10 :A
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
4
01.11.2003
General Purpose Transistors
BC 337 / BC 338
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Collector-Emitter breakdown voltage
Collector-Emitter Durchbruchspannung
IC = 10 mA
IC = 0.1 mA
BC 337
V(BR)CES
40 V
–
–
BC 338
V(BR)CES
20 V
–
–
BC 337
V(BR)CES
50 V
–
–
BC 338
V(BR)CES
30 V
–
–
V(BR)EB0
5V
–
–
VCEsat
–
–
0.7 V
VBE
–
–
1.2 V
fT
–
100 MHz
–
CCB0
–
12 pF
–
Emitter-Base breakdown voltage
Emitter-Basis-Durchbruchspannung
IE = 10 :A
Collector saturation volt. – Kollektor-Sättigungsspannung
IC = 500 mA, IB = 50 mA
Base-Emitter voltage – Basis-Emitter-Spannung
VCE = 1 V, IC = 300 mA
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 50 MHz
Collector-Base Cap. – Kollektor-Basis-Kap.
VCB = 10 V, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
200 K/W 1)
RthA
BC 327 / BC 328
BC 337-16
BC 338-16
BC 337-25
BC 338-25
BC337-40
BC338-40
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
01.11.2003
5
Similar pages