ON MJD210T4G Complementary plastic power transistor Datasheet

MJD200 (NPN)
MJD210 (PNP)
Complementary Plastic
Power Transistors
NPN/PNP Silicon DPAK For Surface
Mount Applications
http://onsemi.com
Designed for low voltage, low−power, high−gain audio
amplifier applications.
Features
• Collector−Emitter Sustaining Voltage −
VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
SILICON
POWER TRANSISTORS
5 AMPERES
25 VOLTS, 12.5 WATTS
• High DC Current Gain − hFE = 70 (Min) @ IC = 500 mAdc
•
•
•
•
•
•
•
= 45 (Min) @ IC = 2 Adc
= 10 (Min) @ IC = 5 Adc
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
= 0.75 Vdc (Max) @ IC = 2.0 Adc
High Current−Gain − Bandwidth Product −
fT = 65 MHz (Min) @ IC = 100 mAdc
Annular Construction for Low Leakage −
ICBO = 100 nAdc @ Rated VCB
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
These are Pb−Free Packages
4
1 2
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
AYWW
J2x0G
Symbol
Max
Unit
A
Y
WW
VCB
40
Vdc
G
VCEO
25
Vdc
VEB
8.0
Vdc
IC
5.0
10
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
12.5
0.1
W
W/°C
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD
1.4
0.011
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−65 to +150
°C
MAXIMUM RATINGS
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
− Continuous
− Peak
3
= Assembly Location
= Year
= Work Week
x = 1 or 0
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 10
1
Publication Order Number:
MJD200/D
MJD200 (NPN) MJD210 (PNP)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
10
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
89.3
°C/W
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
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ÎÎÎÎ
ÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
25
−
Vdc
−
−
100
100
nAdc
mAdc
−
100
nAdc
70
45
10
−
180
−
−
−
−
0.3
0.75
1.8
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3), (IC = 10 mAdc, IB = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0, TJ = 125°C)
VCBO
Emitter Cutoff Current (VBE = 8 Vdc, IC = 0)
VEBO
ON CHARACTERISTICS
DC Current Gain (Note 3),
(IC = 500 mAdc, VCE = 1 Vdc)
(IC = 2 Adc, VCE = 1 Vdc)
(IC = 5 Adc, VCE = 2 Vdc)
hFE
−
Collector−Emitter Saturation Voltage (Note 3)
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 2 Adc, IB = 200 mAdc)
(IC = 5 Adc, IB = 1 Adc)
VCE(sat)
Vdc
Base−Emitter Saturation Voltage (Note 3), (IC = 5 Adc, IB = 1 Adc)
VBE(sat)
−
2.5
Vdc
Base−Emitter On Voltage (Note 3), (IC = 2 Adc, VCE = 1 Vdc)
VBE(on)
−
1.6
Vdc
fT
65
−
MHz
Cob
−
−
80
120
pF
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJD200
MJD210
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%.
4. fT = ⎪hfe⎪• ftest.
ORDERING INFORMATION
Package Type
Shipping†
MJD200G
DPAK
(Pb−Free)
75 Units / Rail
MJD200RLG
DPAK
(Pb−Free)
1800 / Tape & Reel
MJD200T4G
DPAK
(Pb−Free)
2500 / Tape & Reel
MJD210G
DPAK
(Pb−Free)
75 Units / Rail
MJD210RLG
DPAK
(Pb−Free)
1800 / Tape & Reel
Device
MJD210T4
MJD210T4G
DPAK
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
TA
2.5
TC
25
2
20
VCC
+30 V
25 ms
RC
+11 V
1.5
0
15
SCOPE
RB
-9 V
1
10
0.5
5
0
0
TA (SURFACE MOUNT)
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
TC
D1
51
-4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
25
50
75
100
125
D1 MUST BE FAST RECOVERY TYPE, e.g.:
FOR PNP TEST CIRCUIT,
1N5825 USED ABOVE IB ≈ 100 mA
REVERSE ALL POLARITIES
MSD6100 USED BELOW IB ≈ 100 mA
150
T, TEMPERATURE (°C)
Figure 1. Power Derating
Figure 2. Switching Time Test Circuit
1K
10K
td
500
300
200
5K
3K
2K
100
50
30
20
tr
10
5
3
2
ts
1K
t, TIME (ns)
t, TIME (ns)
PD, POWER DISSIPATION (WATTS)
MJD200 (NPN) MJD210 (PNP)
VCC = 30 V
IC/IB = 10
TJ = 25°C
500
300
200
100
50
30
20
MJD200
MJD210
1
1
2 3
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
IC, COLLECTOR CURRENT (A)
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
5
10
MJD200
MJD210
tf
10
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
1
2
IC, COLLECTOR CURRENT (A)
Figure 3. Turn−On Time
Figure 4. Turn−Off Time
http://onsemi.com
3
3
5
10
MJD200 (NPN) MJD210 (PNP)
NPN
MJD200
400
PNP
MJD210
400
TJ = 150°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
25°C
200
-55°C
100
80
60
40
VCE = 1 V
VCE = 2 V
20
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1
2
IC, COLLECTOR CURRENT (A)
25°C
100
80
-55°C
60
40
VCE = 1 V
VCE = 2 V
20
0.05 0.07 0.1
5
3
TJ = 150°C
200
0.2 0.3
0.5 0.7 1
2
IC, COLLECTOR CURRENT (A)
3
5
Figure 5. DC Current Gain
2
2
TJ = 25°C
TJ = 25°C
1.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.6
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1 V
0.4
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1 V
0.4
VCE(sat) @ IC/IB = 10
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1
IC, COLLECTOR CURRENT (A)
2
3
VCE(sat) @ IC/IB = 10
0
0.2 0.3
0.5 0.7 1
0.05 0.07 0.1
IC, COLLECTOR CURRENT (A)
5
2
3
5
3
5
Figure 6. “On” Voltage
+2
+2.5
θV, TEMPERATURE COEFFICIENTS (mV/°C)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
+2.5
*APPLIES FOR IC/IB ≤ hFE/3
+1.5
+1
+0.5
25°C to 150°C
qVC for VCE(sat)
0
-0.5
-55°C to 25°C
-1
25°C to 150°C
-1.5
qVB for VBE
-2
-2.5
0.05 0.07 0.1
-55°C to 25°C
0.2
0.3
0.5 0.7
1
2
3
+2
*APPLIES FOR IC/IB ≤ hFE/3
+1.5
25°C to 150°C
+1
+0.5
*qVC for VCE(sat)
0
-55°C to 25°C
-0.5
25°C to 150°C
-1
-1.5
qVB for VBE
-2
-2.5
0.05 0.07 0.1
5
-55°C to 25°C
IC, COLLECTOR CURRENT (A)
0.2
0.3
0.5 0.7
1
IC, COLLECTOR CURRENT (A)
Figure 7. Temperature Coefficients
http://onsemi.com
4
2
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
MJD200 (NPN) MJD210 (PNP)
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
RqJC(t) = r(t) qJC
RqJC = 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.05
0.1
0.07
0.05
0.02
0.01
0.03
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0 (SINGLE PULSE)
0.02
0.01
0.02
0.05
0.1
0.2
0.5
1
2
t, TIME (ms)
5
10
20
50
100
200
Figure 8. Thermal Response
5
3
2
1
0.1
0.01
0.3
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 9 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C. TJ(pk) may be calculated from the data in
Figure 8. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
5ms
TJ = 150°C
100ms
1ms
500ms
dc
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
1
2
3
5
7 10
20
VCE, COLLECTOR−EMITTER VOLTAGE (V)
30
Figure 9. Active Region Safe Operating Area
200
TJ = 25°C
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (AMP)
10
Cib
100
70
50
Cob
MJD200 (NPN)
MJD210 (PNP)
30
20
0.4
0.6
1
2
4
6
10
VR, REVERSE VOLTAGE (V)
Figure 10. Capacitance
http://onsemi.com
5
20
40
MJD200 (NPN) MJD210 (PNP)
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
3.0
0.118
1.6
0.063
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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6
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MJD200/D
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