MOSFET SMD Type N-Channel MOSFET AO3434 (KO3434) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ● ID = 4.2 A (VGS = 10V) 1 ● RDS(ON) ＜ 52mΩ (VGS = 10V) 0.55 ● VDS (V) = 30V +0.1 1.3 -0.1 +0.1 2.4 -0.1 0.4 3 ■ Features 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 ● RDS(ON) ＜ 75mΩ (VGS = 4.5V) +0.05 0.1 -0.01 0.97 +0.1 -0.1 ● ESD Protected 0-0.1 +0.1 0.38 -0.1 1. Gate D 2. Source 3. Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 10 Sec Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation ID TA=70℃ PD V 4.2 3.5 3.3 2.8 1.4 1 0.9 0.64 Thermal Resistance.Junction- to-Ambient RthJA 90 125 Thermal Resistance.Junction- to-Lead RthJL - 80 Junction Temperature Storage Temperature Range A 30 IDM TA=25℃ Unit TJ 150 Tstg -55 to 150 W ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO3434 (KO3434) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current Gate Threshold Voltage IGSS VGS(th) Test Conditions Min Typ ID=250μA, VGS=0V VDS=30V, VGS=0V 1 VDS=30V, VGS=0V, TJ=55℃ 5 VDS=0V, VGS=±16V VDS=VGS , ID=250μA RDS(On) VGS=10V, ID=4.2A 1 Forward Transconductance VGS=10V, VDS=5V gFS VDS=5V, ID=4.2A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) Qgs Gate Drain Charge Qgd Turn-On DelayTime td(on) Turn-On Rise Time tr Turn-Off DelayTime td(off) Body Diode Reverse Recovery Time trr Qrr Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD ■ Marking Marking www.kexin.com.cn B4** uA 1.8 V A 8.5 269 VGS=0V, VDS=15V, f=1MHz mΩ 75 30 S 340 pF 65 41 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=4.2A 1 1.5 5.7 7.2 3 Ω nC 1.37 0.65 3.8 8 VGS=10V, VDS=15V, RL=3.6Ω,RG=3Ω 23 ns 5.5 tf Body Diode Reverse Recovery Charge ±10 74 TJ=125℃ Qg Gate Source Charge Turn-Off Fall Time 2 ID(ON) uA 52 VGS=4.5V, ID=2A On State Drain Current Unit V VGS=10V, ID=4.2A Static Drain-Source On-Resistance Max 30 IF= 4.2A, dI/dt= 100A/μs IS=1A,VGS=0V 15.5 21 7.1 nC 1.8 A 1 V MOSFET SMD Type N-Channel MOSFET AO3434 (KO3434) ■ Typical Characterisitics 30 20 4.5V 15 4V 9 6 3.5V 10 VDS=5V 12 6V ID(A) ID (A) 25 15 8V 10V 125°C 3 5 25°C VGS=3V 0 0 1 2 0 3 4 5 0 1 VDS (Volts) Fig 1: On-Region Characteristics 4 5 6 1.8 Normalized On-Resistance VGS=4.5V 70 RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics 80 60 50 40 VGS=10V 30 VGS=10V Id=4.2A 1.6 1.4 VGS=4.5V Id=3.5A 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 102 1.0E+01 ID=4.2A 90 1.0E+00 125°C 78 1.0E-01 IS (A) RDS(ON) (mΩ) 2 66 125°C 1.0E-02 25°C 1.0E-03 54 25°C 1.0E-04 42 1.0E-05 30 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO3434 (KO3434) ■ Typical Characterisitics 500 10 V DS =15V ID=4.2A 400 Capacitance (pF) VGS (Volts) 8 6 4 C iss 300 200 C oss 2 100 0 0 0 1 2 3 4 5 6 C rss 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10 µs 25 100 µs 1.0 1ms 10ms 0.0 0.01 0.1 20 15 10 10s 1 VDS (Volts) 10 5 0 0.001 100 D=T on /T T J,PK =T A +PDM .Z θJA .RθJA R θJA =125°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) . Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 TJ(Max)=150°C TA=25°C 0.1s DC T J(Max) =150°C T A =25°C Power (W) ID (Amps) R DS(ON) limited 0.1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 0.01 0.00001 T on T Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4 30 30 10.0 ZθJA Normalized Transient Thermal Resistance 10 www.kexin.com.cn 100 1000