PD-90497G IRFM9240 JANTX2N7237 JANTXV2N7237 JANS2N7237 POWER MOSFET THRU-HOLE (TO-254AA) 200V, P-CHANNEL Product Summary Part Number RDS(on) IRFM9240 0.51Ω REF:MIL-PRF-19500/595 ® ID HEXFET MOSFET TECHNOLOGY -11A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. TO-254AA Features: n n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Maximum Ratings Parameter ID @ V GS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight Units -11 -7.0 -44 125 1.0 ±20 500 -11 12.5 -5.0 -55 to 150 A W W/°C V mJ A mJ V/ns °C 300 (0.063 in.(1.6mm) from case for 10s) 9.3 (typical) g For footnotes refer to the last page www.irf.com 1 04/30/14 IRFM9240 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min BVDSS Drain-to-Source Breakdown Voltage -200 ∆BV DSS /∆T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance — VGS(th) Gate Threshold Voltage -2.0 g fs Forward Transconductance 4.0 IDSS Zero Gate Voltage Drain Current — — Typ Max Units — — V -0.2 — V/°C — — — — — — 0.51 0.52 -4.0 — -25 -250 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 6.8 -100 100 60 15 38 35 85 85 65 — C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1200 570 81 — — Ω V S µA nA nC ns nH pF Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -10V, ID = -7.0Aà VGS = -10V, ID = -11A à VDS = VGS, ID = -250µA VDS = -15V, IDS = -7.0A à VDS = -160V, VGS= 0V VDS = -160V VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS = -10V, ID = -11A VDS = -100V VDD = -100V, ID = -11A, RG = 9.1Ω, VGS = -10V Measured from drain lead (6mm/ 0.25 in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À — — — — -11 -44 A VSD trr Q RR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — — — — — -4.6 440 7.2 V ns µC ton Forward Turn-On Time Test Conditions Tj = 25°C, IS = -11A, VGS = 0V à Tj = 25°C, IF = -11A, di/dt ≤ -100A/µs VDD ≤ -50V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-sink Junction-to-Ambient Min Typ Max — — — — 0.21 — 1.0 — 48 Units Test Conditions °C/W Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com IRFM9240 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFM9240 13a & b Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage -I D, Drain-to-Source Current (A) 1000 OPERATION IN THIS AREA LIMITED BY R DS (on) 100 100µs 10 1ms 10ms 1 0.1 DC Tc = 25°C Tj = 150°C Single Pulse 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area www.irf.com IRFM9240 RD V DS VGS D.U.T. RG - + V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 10% Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFM9240 L VDS D.U.T RG VGS -20V IAS VDD A DRIVER 0.01Ω tp 15V Fig 12a. Unclamped Inductive Test Circuit I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ -10V 12V -10V QGS .3µF QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform 6 .2µF IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFM9240 Footnotes:  ISD ≤ -11A, di/dt ≤ −150A/µs, À Repetitive Rating; Pulse width limited by VDD≤ -200V, TJ ≤ 150°C maximum junction temperature. Á VDD =-50V, starting TJ = 25°C, L = 8.3mH Peak IL = -11A, VGS = -10V à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Case Outline and Dimensions — TO-254AA 0.12 [.005] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 6.60 [.260] 6.32 [.249] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 C 2 2X B 3 14.48 [.570] 12.95 [.510] 3X 3.81 [.150] 13.84 [.545] 13.59 [.535] 1.27 [.050] 1.02 [.040] 0.84 [.033] MAX. 1.14 [.045] 0.89 [.035] 0.36 [.014] 3.81 [.150] B A NOT ES : 1. 2. 3. 4. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/2014 www.irf.com 7