ONSEMI NGB8202N

NGB8202N
Ignition IGBT
20 A, 400 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
http://onsemi.com
20 AMPS
400 VOLTS
VCE(on) = 1.3 V @
IC = 10 A, VGE . 4.5 V
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
•
•
•
•
•
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
C
RG
G
RGE
Applications
E
• Ignition Systems
MARKING
DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector−Emitter Voltage
Rating
VCES
440
V
Collector−Gate Voltage
VCER
440
V
Gate−Emitter Voltage
VGE
"15
V
Collector Current−Continuous
@ TC = 25°C − Pulsed
IC
20
50
ADC
AAC
Continuous Gate Current
IG
1.0
mA
Transient Gate Current (t≤2 ms, f≤100 Hz)
IG
20
mA
ESD (Charged−Device Model)
ESD
2.0
kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
ESD (Machine Model) R = 0 W, C = 200 pF
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating & Storage Temperature Range
ESD
kV
8.0
D2PAK
CASE 418B
STYLE 4
NGB8202N = Device Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
500
V
PD
150
1.0
Watts
W/°C
TJ, Tstg
−55 to +175
°C
NG
B8202N
YWW
NGB8202NT4
Package
Shipping †
D2PAK
800 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
 Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 1
1
Publication Order Number:
NGB8202N/D
NGB8202N
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)
Characteristic
Symbol
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 150°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 175°C
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
EAS
Value
Unit
mJ
250
200
180
EAS(R)
mJ
2000
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
RqJC
1.0
°C/W
Thermal Resistance, Junction−to−Ambient (Note 1)
RqJA
62.5
°C/W
TL
275
°C
Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2)
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
BVCES
IC = 2.0 mA
TJ = −40°C to 175°C
370
395
420
V
IC = 10 mA
TJ = −40°C to 175°C
390
415
440
VGE = 0 V,
VCE = 15 V
TJ = 25°C
0.1
1.0
mA
mA
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
Zero Gate Voltage Collector Current
ICES
VCE = 200 V,
VGE = 0 V
Reverse Collector−Emitter Clamp
Voltage
Reverse Collector−Emitter Leakage
Current
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
BVCES(R)
( )
IC = −75 mA
ICES(R)
( )
VCE = −24 V
TJ = 25°C
0.5
1.5
10
TJ = 175°C
1.0
25
100*
TJ = −40°C
0.4
0.8
5.0
TJ = 25°C
30
35
39
TJ = 175°C
35
39
45*
TJ = −40°C
30
33
37
TJ = 25°C
0.05
0.1
0.5
TJ = 175°C
1.0
5.0
10*
TJ = −40°C
0.005
0.01
0.1
V
mA
BVGES
IG = "5.0 mA
TJ = −40°C to 175°C
12
12.5
14
V
IGES
VGE = "5.0 V
TJ = −40°C to 175°C
200
300
350*
mA
Gate Resistor (Optional)
RG
TJ = −40°C to 175°C
Gate−Emitter Resistor
RGE
TJ = −40°C to 175°C
14.25
70
16
25
kW
TJ = 25°C
1.5
1.8
2.1
V
TJ = 175°C
0.7
1.0
1.3
TJ = −40°C
1.7
2.0
2.3*
4.0
4.6
5.2
W
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGE(th)
( )
IC = 1
1.0
0 mA
mA,
VGE = VCE
Threshold Temperature Coefficient
(Negative)
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
http://onsemi.com
2
mV/°C
NGB8202N
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
TJ = 25°C
0.95
1.15
1.35
V
TJ = 175°C
0.7
0.95
1.15
TJ = −40°C
1.0
1.3
1.40
TJ = 25°C
0.95
1.25
1.45
TJ = 175°C
0.8
1.05
1.25
TJ = −40°C
1.1
1.4
1.5
TJ = 25°C
0.85
1.15
1.4
TJ = 175°C
0.7
0.95
1.2
TJ = −40°C
1.0
1.3
1.6*
TJ = 25°C
1.0
1.3
1.6
TJ = 175°C
0.8
1.05
1.4
TJ = −40°C
1.1
1.4
1.7*
TJ = 25°C
1.15
1.45
1.7
TJ = 175°C
1.0
1.3
1.55
TJ = −40°C
1.25
1.55
1.8*
1.6
1.9
ON CHARACTERISTICS (Note 4)
Collector−to−Emitter On−Voltage
VCE(on)
( )
IC = 6.5 A,
VGE = 3.7 V
IC = 9.0 A,
VGE = 3.9 V
IC = 7.5 A,
VGE = 4.5 V
IC = 10 A,
VGE = 4.5 V
IC = 15 A,
VGE = 4.5 V
Forward Transconductance
gfs
TJ = 25°C
1.3
IC = 20 A,
VGE = 4.5 V
TJ = 175°C
1.2
1.5
1.8
TJ = −40°C
1.4
1.75
2.0*
IC = 6.0 A,
VCE = 5.0 V
TJ = 25°C
10
18
25
Mhos
1100
1300
1500
pF
70
80
90
18
20
22
TJ = 25°C
6.0
8.0
10
TJ = 175°C
6.0
8.0
10
TJ = 25°C
4.0
6.0
8.0
TJ = 175°C
8.0
10.5
14
TJ = 25°C
3.0
5.0
7.0
TJ = 175°C
5.0
7.0
9.0
TJ = 25°C
1.5
3.0
4.5
TJ = 175°C
5.0
7.0
10
TJ = 25°C
1.0
1.5
2.0
TJ = 175°C
1.0
1.5
2.0
TJ = 25°C
4.0
6.0
8.0
TJ = 175°C
3.0
5.0
7.0
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Transfer Capacitance
CRSS
f = 10 kHz, VCE = 25 V
TJ = 25°C
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive)
Fall Time (Resistive)
Turn−Off Delay Time (Inductive)
td(off)
( )
tf
td(off)
( )
Fall Time (Inductive)
tf
Turn−On Delay Time
td(on)
( )
Rise Time
VCC = 300 V, IC = 9.0 A
RG = 1.0
1 0 kW
kW, RL = 33 W,
W
VGE = 5.0 V
tr
VCC = 300 V, IC = 9.0 A
RG = 1.0
1 0 kW
kW,
L = 300 m
mH,, VGE = 5.0 V
VCC = 14 V, IC = 9.0 A
RG = 1
1.0
0 kW
kW, RL = 1.5
1 5 W,
W
VGE = 5.0 V
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
http://onsemi.com
3
mSec
NGB8202N
TYPICAL ELECTRICAL CHARACTERISTICS
400
30
TJ = 25°C
IA, AVALANCHE CURRENT (A)
SCIS ENERGY (mJ)
350
300
250
TJ = 175°C
200
150
100
VCC = 14 V
VGE = 5.0 V
RG = 1000 W
50
0
0
2
6
4
8
VCC = 14 V
VGE = 5.0 V
RG = 1000 W
25
L = 1.8 mH
20
L = 3.0 mH
15
10
L = 10 mH
5
0
−50
10
−25
INDUCTOR (mH)
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
60
IC = 25 A
IC = 20 A
IC = 15 A
1.25
IC = 10 A
1.0
IC = 7.5 A
0.75
0.5
0.25
VGE = 4.5 V
0.0
−50
−25
0
25
50
75
100
150
125
50
100
125
150 175
4V
TJ = 175°C
40
3.5 V
30
3V
20
2.5 V
10
0
175
4.5 V
5V
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. Collector−to−Emitter Voltage vs.
Junction Temperature
Figure 4. Collector Current vs.
Collector−to−Emitter Voltage
60
60
VGE = 10 V
50
4.5 V
4V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
75
VGE = 10 V
TJ, JUNCTION TEMPERATURE (°C)
5V
40
TJ = 25°C
3.5 V
30
20
3V
10
0
50
Figure 2. Open Secondary Avalanche Current
vs. Temperature
2.0
1.5
25
TJ, JUNCTION TEMPERATURE (°C)
Figure 1. Self Clamped Inductive Switching
1.75
0
2.5 V
0
1
2
3
4
5
6
7
VGE = 10 V
4V
50
5V
40
TJ = −40°C
3.5 V
30
20
3V
10
0
8
4.5 V
2.5 V
0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1
2
3
4
5
6
7
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector Current vs.
Collector−to−Emitter Voltage
Figure 6. Collector Current vs.
Collector−to−Emitter Voltage
http://onsemi.com
4
8
NGB8202N
TYPICAL ELECTRICAL CHARACTERISTICS
10000
COLLECTOR TO EMITTER LEAKAGE
CURRENT (mA)
IC, COLLECTOR CURRENT (A)
45
VCE = 5 V
40
1000
35
30
25
20
TJ = 25°C
15
10
TJ = 175°C
5
0
0
0.5
1
1.5
TJ = −40°C
2
2.5
3
3.5
4
10
VCE = 200 V
1.0
0.1
−50
−25
0
25
50
75
100
125
150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Transfer Characteristics
Figure 8. Collector−to−Emitter Leakage
Current vs. Temperature
10000
2.25
Mean
1.75
Mean − 4 s
1.50
Ciss
1000
C, CAPACITANCE (pF)
Mean + 4 s
2.00
1.25
1.00
0.75
0.50
Coss
100
Crss
10
1.0
0.25
0
−50
−25
0
25
50
75
100
125
150
0.1
175
5
10
15
20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 9. Gate Threshold Voltage vs.
Temperature
Figure 10. Capacitance vs.
Collector−to−Emitter Voltage
12
12
10
10
tfall
8
tdelay
6
VCC = 300 V
VGE = 5.0 V
RG = 1000 W
IC = 9.0 A
RL = 33 W
4
2
0
25
0
TJ, JUNCTION TEMPERATURE (°C)
SWITCHING TIME (ms)
GATE THRESHOLD VOLTAGE (V)
100
VGE, GATE TO EMITTER VOLTAGE (V)
2.50
SWITCHING TIME (ms)
VCE = −24 V
50
75
100
125
150
8
VCC = 300 V
VGE = 5.0 V
RG = 1000 W
IC = 9.0 A
L = 300 mH
25
tdelay
6
tfall
4
2
0
25
175
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Resistive Switching Fall Time vs.
Temperature
Figure 12. Inductive Switching Fall Time vs.
Temperature
http://onsemi.com
5
R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)
NGB8202N
100
Duty Cycle = 0.5
0.2
10
0.1
0.05
1
0.02
0.01
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
P(pk)
t1
0.1
t2
Single Pulse
0.01
0.000001
DUTY CYCLE, D = t1/t2
0.00001
0.0001
0.001
0.01
0.1
TJ(pk) − TA = P(pk) RqJA(t)
For D=1: RqJC X R(t) for t ≤ 0.1 s
1
10
100
1000
t,TIME (S)
RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)
Figure 13. Minimum Pad Transient Thermal Resistance
(Non−normalized Junction−to−Ambient)
1
Duty Cycle = 0.5
0.2
0.1
0.1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
P(pk)
0.05
t1
0.02
t2
0.01
0.01
0.000001
TJ(pk) − TA = P(pk) RqJC(t)
DUTY CYCLE, D = t1/t2
Single Pulse
0.00001
0.0001
0.001
0.01
t,TIME (S)
Figure 14. Best Case Transient Thermal Resistance
(Non−normalized Junction−to−Case Mounted on Cold Plate)
http://onsemi.com
6
0.1
1
NGB8202N
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
V
W
−B−
4
1
2
A
S
3
−T−
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
K
J
G
D 3 PL
0.13 (0.005)
W
H
M
VARIABLE
CONFIGURATION
ZONE
T B
M
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
N
R
P
U
L
M
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
L
M
L
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT
8.38
0.33
1.016
0.04
10.66
0.42
17.02
0.67
3.05
0.12
SCALE 3:1
http://onsemi.com
7
5.08
0.20
mm Ǔ
ǒinches
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
NGB8202N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
Literature Distribution Center for ON Semiconductor
USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Phone: 81−3−5773−3850
Email: [email protected]
http://onsemi.com
8
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
NGB8202N/D