ONSEMI NJD2873T4

NJD2873T4
Plastic Power Transistors
NPN Silicon DPAK For Surface Mount
Applications
Designed for high−gain audio amplifier applications.
http://onsemi.com
Features
• Pb−Free Package is Available
• High DC Current Gain −
•
•
•
•
SILICON
POWER TRANSISTORS
2 AMPERES
50 VOLTS
12.5 WATTS
hFE = 120 (Min) @ IC = 500 mA
= 40 (Min) @ IC = 2 A
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 0.3 Vdc (Max) @ IC = 1 A
High Current−Gain − Bandwidth Product −
fT = 65 MHz (Min) @ IC = 100 mA
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B 8000 V
Machine Model, C 400 V
MARKING
DIAGRAM
4
MAXIMUM RATINGS
1 2
Rating
Symbol
Value
Unit
VCB
50
Vdc
VCEO
50
Vdc
VEB
5
Vdc
IC
2
3
Adc
Base Current
IB
0.4
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
12.5
0.1
W
W/°C
Total Device Dissipation @ TA = 25°C*
Derate above 25°C
PD
1.4
0.011
W
W/°C
TJ, Tstg
−65 to
+150
°C
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Continuous
Peak
Operating and Storage Junction
Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
YWW
J
2873
DPAK
CASE 369C
STYLE 1
3
Y
WW
= Year
= Work Week
ORDERING INFORMATION
Device
NJD2873T4
NJD2873T4G
Package
Shipping†
DPAK
2500 Units / Reel
DPAK
(Pb−Free)
2500 Units / Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction−to−Case
Junction−to−Ambient*
Symbol
Max
Unit
RJC
RJA
10
89.3
°C/W
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
 Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 3
1
Publication Order Number:
NJD2873T4/D
NJD2873T4
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
50
−
Vdc
−
100
−
100
120
40
360
−
−
0.3
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
ICBO
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
IEBO
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 0.5 A, VCE = 2 V)
(IC = 2 Adc, VCE = 2 Vdc)
hFE
−
Collector−Emitter Saturation Voltage (Note 1)
(IC = 1 A, IB = 0.05 A)
VCE(sat)
Vdc
Base−Emitter Saturation Voltage (Note 1) (IC = 1 A, IB = 0.05 Adc)
VBE(sat)
−
1.2
Vdc
Base−Emitter On Voltage (Note 1) (IC = 1 Adc, VCE = 2 Vdc)
VBE(on)
−
1.2
Vdc
fT
65
−
MHz
Cob
−
80
pF
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.
2. fT = hfe• ftest.
http://onsemi.com
2
NJD2873T4
TYPICAL CHARACTERISTICS
PD, POWER DISSIPATION (WATTS)
TA
2.5
TC
25
2
20
1.5
15
1
10
0.5
5
0
0
TA (SURFACE MOUNT)
TC
50
25
75
100
125
150
T, TEMPERATURE (°C)
Figure 1. Power Derating
1000
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
100
10
0
0.01
VBE(sat), BASE−EMITTER SATURATION
VOLTAGE (V)
−40°C
25°C
0.1
1
10
0.8
25°C
100°C
0.5
0.4
Ic/Ib = 20
0.3
0.2
0.01
Ic/Ib = 20
1
10
Figure 3. Collector−Emitter Saturation Voltage
−40°C
0.6
0.1
−40°C
Figure 2. DC Current Gain
1.0
0.7
100°C
IC, COLLECTOR CURRENT (AMPS)
1.1
0.9
25°C
IC, COLLECTOR CURRENT (AMPS)
VBE(sat), BASE−EMITTER SATURATION
VOLTAGE (V)
hFE, DC CURRENT GAIN
VCE = 2.0 V
100°C
0.36
0.33
0.30
0.27
0.24
0.21
0.18
0.15
0.12
0.09
0.06
0.03
0
0.01
0.1
1
10
1.1
1.0
0.9
0.8
0.7
−40°C
25°C
0.6
100°C
0.5
0.4
Ic/Ib = 20
0.3
0.2
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Base−Emitter Saturation Voltage
Figure 5. Base−Emitter Saturation Voltage
http://onsemi.com
3
10
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
NJD2873T4
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.02
RJC(t) = r(t) JC
RJC = 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) JC(t)
0.05
0.02
0.01
0 (SINGLE PULSE)
0.05
0.1
0.2
0.5
1
2
t, TIME (ms)
5
Figure 6. Thermal Response
http://onsemi.com
4
10
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
20
50
100
200
NJD2873T4
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
−T−
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
NJD2873T4
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
6
For additional information, please contact your
local Sales Representative.
NJD2873T4/D