NJL3281D (NPN) NJL1302D (PNP) Product Preview Complementary ThermalTrak Transistors The ThermalTrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications. They can also be used in other applications as transistor die protection devices. Features • • • • http://onsemi.com BIPOLAR POWER TRANSISTORS 15 A, 230 V, 200 W Thermally Matched Bias Diode Instant Thermal Bias Tracking Absolute Thermal Integrity High Safe Operating Area Benefits • Eliminates Thermal Equilibrium Lag Time and Bias Trimming • Superior Sound Quality Through Improved Dynamic Temperature • • • Response Significantly Improved Bias Stability Simplified Assembly ♦ Reduced Labor Costs ♦ Reduced Component Count High Reliability TO−264, 5 LEAD CASE 340AA STYLE 1 MARKING DIAGRAM SCHEMATIC Applications • High−End Consumer Audio Products NJLxxxxD AYYWW ♦ • Home Amplifiers ♦ Home Receivers Professional Audio Amplifiers ♦ Theater and Stadium Sound Systems ♦ Public Address Systems (PAs) xxxx A YY WW = Specific Device Code = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. Semiconductor Components Industries, LLC, 2004 December, 2004 − Rev. P1 1 Publication Order Number: NJL3281D/D NJL3281D (NPN) NJL1302D (PNP) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCEO 230 Vdc Collector−Base Voltage VCBO 230 Vdc Emitter−Base Voltage VEBO 5 Vdc VCEX 230 Vdc IC 15 25 Adc Base Current − Continuous IB 1.5 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 200 1.43 W W/°C TJ, Tstg − 65 to +150 °C VR 200 V IF(AV) 1.0 A Collector−Emitter Voltage − 1.5 V Collector Current − Continuous − Peak (Note 1) Operating and Storage Junction Temperature Range DC Blocking Voltage Average Rectified Forward Current THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol Max Unit RJC 0.625 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. ATTRIBUTES Characteristic ESD Protection Value Human Body Model Machine Model Flammability Rating >8000 V > 400 V UL 94 V−0 @ 0.125 in ORDERING INFORMATION Package Shipping NJL3281D Device TO−264 25 Units / Rail NJL1302D TO−264 25 Units / Rail http://onsemi.com 2 NJL3281D (NPN) NJL1302D (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max 230 − − 50 − 5 60 60 60 60 60 45 12 175 175 175 175 175 − − − 3 30 − − 600 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCB = 230 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) IEBO Vdc Adc Adc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc) (IC = 1 Adc, VCE = 5 Vdc) (IC = 3 Adc, VCE = 5 Vdc) (IC = 5 Adc, VCE = 5 Vdc) (IC = 7 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) (IC = 15 Adc, VCE = 5 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 10 Adc, IB = 1 Adc) VCE(sat) Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) MHz Cob Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 A, TJ = 25°C) (iF = 1.0 A, TJ = 150°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 150°C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/s) trr pF V 1.0 0.83 A 10 100 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 3 100 ns NJL3281D (NPN) NJL1302D (PNP) TYPICAL CHARACTERISTICS NPN NJL3281D 60 50 f, T CURRENT BANDWIDTH PRODUCT (MHz) f, T CURRENT BANDWIDTH PRODUCT (MHz) PNP NJL1302D VCE = 10 V 40 5V 30 20 10 0 TJ = 25°C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 5V 40 30 20 TJ = 25°C ftest = 1 MHz 10 0 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 2. Typical Current Gain Bandwidth Product PNP NJL1302D NPN NJL3281D TJ = 100°C 25°C 100 −25 °C TJ = 100°C 100 −25 °C VCE = 20 V VCE = 20 V 0.1 25°C 1.0 10 IC, COLLECTOR CURRENT (AMPS) 10 100 0.1 Figure 3. DC Current Gain, VCE = 20 V 1.0 10 IC, COLLECTOR CURRENT (AMPS) NPN NJL3281D 1000 h FE , DC CURRENT GAIN 1000 h FE , DC CURRENT GAIN 100 Figure 4. DC Current Gain, VCE = 20 V PNP NJL1302D TJ = 100°C 25°C 100 −25 °C 10 10 1000 h FE , DC CURRENT GAIN hFE , DC CURRENT GAIN 50 Figure 1. Typical Current Gain Bandwidth Product 1000 10 VCE = 10 V TJ = 100°C 100 −25 °C VCE = 5 V VCE = 5 V 0.1 25°C 1.0 10 IC, COLLECTOR CURRENT (AMPS) 10 100 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V http://onsemi.com 4 100 NJL3281D (NPN) NJL1302D (PNP) TYPICAL CHARACTERISTICS PNP NJL1302D NPN NJL3281D 45 45 1.5 A 35 30 1A 25 0.5 A 20 15 10 5.0 0 5.0 10 15 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 1A 30 0.5 A 25 20 15 10 0 25 TJ = 25°C 0 Figure 7. Typical Output Characteristics 5.0 10 15 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) PNP NJL1302D NPN NJL3281D 2.5 SATURATION VOLTAGE (VOLTS) 2.0 VBE(sat) 1.5 1.0 0.5 TJ = 25°C IC/IB = 10 2.0 1.5 VBE(sat) 1.0 0.5 VCE(sat) VCE(sat) 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 10. Typical Saturation Voltages PNP NJL1302D NPN NJL3281D TJ = 25°C VCE = 5 V (DASHED) VCE = 20 V (SOLID) 0.1 0.1 Figure 9. Typical Saturation Voltages 10 1.0 0 100 VBE(on) , BASE−EMITTER VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) VBE(on) , BASE−EMITTER VOLTAGE (VOLTS) TJ = 25°C IC/IB = 10 2.5 0.1 25 Figure 8. Typical Output Characteristics 3.0 0 IB = 2 A 35 5.0 TJ = 25°C 0 1.5 A 40 IB = 2 A IC , COLLECTOR CURRENT (A) IC , COLLECTOR CURRENT (A) 40 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 10 TJ = 25°C VCE = 5 V (DASHED) 1.0 0.1 VCE = 20 V (SOLID) 0.1 Figure 11. Typical Base−Emitter Voltage 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 12. Typical Base−Emitter Voltage http://onsemi.com 5 100 100 NJL3281D (NPN) NJL1302D (PNP) TYPICAL CHARACTERISTICS IC , COLLECTOR CURRENT (AMPS) 100 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 10 ms 10 50 ms 1 sec 1.0 250 ms 0.1 1.0 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area PNP NJL1302D 10000 Cib Cib C, CAPACITANCE (pF) C, CAPACITANCE (pF) 10000 NPN NJL3281D Cob 1000 1000 Cob TJ = 25°C ftest = 1 MHz 0.1 1.0 10 100 100 IR, REVERSE CURRENT (A) 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) Figure 14. NJL1302D Typical Capacitance Figure 15. NJL3281D Typical Capacitance 100 TJ = 175°C 10 1 TJ = 100°C 0.1 TJ = 25°C 0.01 0.001 0 0.1 VR, REVERSE VOLTAGE (VOLTS) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 TJ = 25°C ftest = 1 MHz 20 40 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (VOLTS) 10 TC = 175°C 100°C 25°C 1 0.1 0.01 0.3 Figure 16. Typical Reverse Current 0.4 0.5 0.6 0.7 0.8 0.9 VF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 17. Typical Forward Voltage http://onsemi.com 6 1 1.1 NJL3281D (NPN) NJL1302D (PNP) PACKAGE DIMENSIONS TO−264, 5 LEAD CASE 340AA−01 ISSUE O −T− Q −B− Y 0.25 (0.010) M T B C M E U N A R W L 1 2 3 4 5 P K M J H G D 5 PL F 5 PL 0.25 (0.010) M T B S S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 25.857 25.984 26.111 1.018 1.023 1.028 B 19.761 19.888 20.015 0.778 0.783 0.788 C 4.928 5.055 5.182 0.194 0.199 0.204 0.0480 BSC D 1.219 BSC E 2.032 2.108 2.184 0.0800 0.0830 0.0860 1.981 BSC 0.0780 BSC F 0.150 BSC G 3.81 BSC H 2.667 2.718 2.769 0.1050 0.1070 0.1090 0.0230 BSC J 0.584 BSC K 20.422 20.549 20.676 0.804 0.809 0.814 0.444 REF L 11.28 REF −−− 7 0 7 0 −−− M 0.180 REF N 4.57 REF P 2.259 2.386 2.513 0.0889 0.0939 0.0989 0.1370 BSC Q 3.480 BSC 0.100 REF R 2.54 REF −−− S 0 −−− 8 0 8 0.243 REF U 6.17 REF −−− 0 −−− 6 0 6 W 0.0940 BSC Y 2.388 BSC STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR 4. ANODE 5. CATHODE W S http://onsemi.com 7 NJL3281D (NPN) NJL1302D (PNP) ThermalTrak is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 For additional information, please contact your local Sales Representative. NJL3281D/D