FMMT549 FMMT549 C E B TM SuperSOT -3 (SOT-23) PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted FMMT549 Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 35 V VEBO Emitter-Base Voltage 5 V IC Collector Current - Continuous - Peak Pulse Current 1 2 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Parameter *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Max Characteristic Symbol Units FMMT549 PD Total Device Dissipation* Derate above 25°C 500 4 mW mW/°C RθJA Thermal Resistance, Junction to Ambient 250 °C/W *Device mounted on FR-4 PCB 4.5” X 5”; mounting pad 0.02 in2 of 2oz copper. 1998 Fairchild Semiconducto Corporation Page 1 of 2 fmmt549.lwpPrPB 7/10/98 revB Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA 30 V BVCBO Collector-Base Breakdown Voltage IC = 100 µA 35 V BVEBO Emitter-Base Breakdown Voltage IE = 100 µA 5 V ICBO Collector Cutoff Current VCB = 30 V 100 10 VCB = 30 V, Ta=100°C IEBO Emitter Cutoff Current 100 VEB = 4V nA uA nA ON CHARACTERISTICS* hFE VCE(sat) DC Current Gain Collector-Emitter Saturation Voltage IC = 50 mA, VCE = 2V 70 - IC = 500 mA, VCE = 2V 100 IC = 1A, VCE = 2V 80 IC = 2A, VCE = 2V 40 300 IC = 1 A, IB = 100 mA 500 mV IC = 2 A, IB = 200 mA 750 mV 1.25 V VBE(sat) Base-Emitter Saturation Voltage IC = 1 A, IB = 100 mA VBE(on) Base-Emitter On Voltage IC = 1 A, VCE = 2 V 1 V 25 pF SMALL SIGNAL CHARACTERISTICS Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1MHz fT Transition Frequency IC = 100 mA,VCE = 5 V, f=100MHz 100 MHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 1998 Fairchild Semiconducto Corporation Page 2 of 2 fmmt549.lwpPrPB 7/10/98 revB FMMT549 PNP Low Saturation Transistor (continued) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.