NTE NTE252 Silicon complementary transistors darlington power amplifier Datasheet

NTE251 (NPN) & NTE252 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for general–purpose amplifier and low–frequency switching applications.
Features:
D High DC Current Gain @ IC = 10A:
hFE = 2400 Typ (NTE251)
hFE = 4000 Typ (NTE252)
D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.915W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.09°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
100
–
–
V
OFF Characteristics
Collector–Emitter SustainingVoltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 100mA, IB = 0
ICEO
VCE = 50V, IE = 0
–
–
1.0
mA
ICEX
VCE = 100V, VBE(off) = 1.5V
–
–
0.5
mA
VCE = 100V, VBE(off) = 1.5V,
TA = +150°C
–
–
5.0
mA
IEBO
VBE = 5V, IC = 0
–
–
2.0
mA
hFE
VCE = 3V, IC = 10A
750
–
18000
VCE = 3V, IC = 20A
100
–
–
IC = 10A, IB = 40mA
–
–
2.0
V
IC = 20A, IB = 200mA
–
–
3.0
V
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
VCE(sat)
Base–Emitter Saturation Voltage
VBE(sat)
IC = 20A, IB = 200mA
–
–
4.0
V
Base–Emitter ON Voltage
VBE(on)
VCE = 3V, IC = 10A
–
–
2.8
V
Dynamic Characteristics
Small–Signal Current Gain
hfe
VCE = 3V, IC = 10A, f = 1kHz
300
–
–
Magnitude of Common Emitter
Small–Signal Short–Circuit
Forward Current Transfer Ratio
|hfe|
VCE = 3V, IC = 10A, f = 1MHz
4.0
–
–
Output Capacitance
NTE251
NTE252
Cob
VCB = 10V, IE = 0, f = 0.1MHz
–
–
–
–
400
600
MHz
pF
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
Schematic Diagram
C
B
C
B
E
NPN
E
PNP
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.040 (1.02)
1.187 (30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case
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