Diodes DMN6068LK3-13 60v n-channel enhancement mode mosfet Datasheet

A Product Line of
Diodes Incorporated
DMN6068LK3
60V N-CHANNEL ENHANCEMENT MODE MOSFET
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Product Summary
V(BR)DSS
Features and Benefits
ID
RDS(on)
TA = 25°C
68mΩ @ VGS= 10V
8.5A
100mΩ @ VGS= 4.5V
7.0A
•
Low on-resistance
•
Fast switching speed
•
“Green” component and RoHS compliant (Note 1)
60V
Mechanical Data
•
Case: TO252-3L
Description and Applications
•
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals Connections: See Diagram
•
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Backlighting
•
Marking Information: See Below
•
DC-DC Converters
•
•
Ordering Information: See Below
Power management functions
•
Weight: 0.33 grams (approximate)
D
D
G
D
G
TOP VIEW
Ordering Information
Product
DMN6068LK3-13
Note:
S
S
PIN OUT -TOP VIEW
Equivalent Circuit
(Note 1)
Marking
N6068L
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
YYWW
N6068L
DMN6068LK3
Document Revision: 1
= Manufacturer’s Marking
N6068L = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
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DMN6068LK3
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGS
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
VGS = 10V
Pulsed Drain current
VGS= 10V
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 3)
TA=70°C (Note 3)
(Note 2)
(Note 4)
(Note 3)
(Note 4)
ID
IDM
IS
ISM
Value
60
±20
8.5
6.8
6.0
22.2
10.2
22.2
Unit
V
V
Value
4.12
33
8.49
67.9
2.12
16.9
30.3
14.7
59.0
3.09
-55 to 150
Unit
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
(Note 2)
Power dissipation
Linear derating factor
(Note 3)
PD
(Note 5)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
(Note 2)
(Note 3)
(Note 5)
(Note 6)
RθJA
RθJL
TJ, TSTG
W
mW/°C
°C/W
°C
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t ≤ 10 sec.
4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (at the end of the drain lead).
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Thermal Characteristics
RDS(on)
1
DC
ID Drain Current (A)
ID Drain Current (A)
RDS(on)
10 Limited
1s
100ms
10ms
T amb=25°C
100m
100µs
1
DC
1
1s
100ms
10ms
Tamb=25°C
100m
1ms
25mm x 25mm
1oz FR4
10 Limited
1ms
50mm x 50mm
2oz FR4
10
100µs
1
VDS Drain-Source Voltage (V)
10
VDS Drain-Source Voltage (V)
Safe Operating Area
Safe Operating Area
T amb=25°C
50
25mm x 25mm
1oz FR4
40
D=0.5
30
20
D=0.1
D=0.2
D=0.05
10
Single Pulse
0
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
35
60
Transient Thermal Impedance
T amb=25°C
30
50mm x 50mm
2oz FR4
25
20
D=0.5
15
D=0.1
D=0.2
10
D=0.05
5
Single Pulse
0
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
50mm x 50mm
2oz FR4
10
25mm x 25mm
1oz FR4
1
100µ
1m
10m 100m
1
10
100
Pulse Width (s)
1k
Max Power Dissipation (W)
Max Power Dissipation (W)
4.5
Single Pulse
T amb=25°C
100
4.0
50mm x 50mm
2oz FR4
3.5
3.0
25mm x 25mm
1oz FR4
2.5
2.0
1.5
1.0
0.5
0.0
0
Pulse Power Dissipation
DMN6068LK3
Document Revision: 1
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
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DMN6068LK3
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
60
⎯
⎯
V
ID = 250μA, VGS= 0V
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
0.5
μA
VDS= 60V, VGS= 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS= ±20V, VDS= 0V
VGS(th)
1.0
⎯
3.0
V
ID= 250μA, VDS= VGS
ON CHARACTERISTICS
Gate Threshold Voltage
0.068
VGS= 10V, ID= 12A
RDS (ON)
⎯
⎯
Forward Transconductance (Notes 7 & 8)
gfs
⎯
19.7
⎯
S
VDS= 15V, ID= 12A
Diode Forward Voltage (Note 7)
VSD
⎯
0.98
1.15
V
IS= 12A, VGS= 0V
Reverse recovery time (Note 8)
trr
145
⎯
ns
Reverse recovery charge (Note 8)
Qrr
⎯
929
⎯
nC
Input Capacitance
Ciss
⎯
502
⎯
pF
Output Capacitance
Coss
⎯
45.7
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
27.1
⎯
pF
Total Gate Charge
Qg
⎯
5.55
⎯
nC
Total Gate Charge
Qg
⎯
10.3
⎯
nC
Gate-Source Charge
Qgs
⎯
1.6
⎯
nC
Gate-Drain Charge
Qgd
⎯
3.5
⎯
nC
Turn-On Delay Time (Note 9)
tD(on)
⎯
3.6
⎯
ns
Turn-On Rise Time (Note 9)
tr
⎯
10.8
⎯
ns
tD(off)
⎯
11.9
⎯
ns
tf
⎯
8.7
⎯
ns
Static Drain-Source On-Resistance (Note 7)
0.100
Ω
VGS= 4.5V, ID= 6A
IS= 12A, di/dt= 100A/μs
DYNAMIC CHARACTERISTICS (Note 8)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Notes:
VDS= 30V, VGS= 0V
f= 1MHz
VGS= 4.5V
VGS= 10V
VDS= 30V
ID= 12A
VDD= 30V, VGS= 10V
ID= 12A, RG ≅ 6.0Ω
7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.
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Typical Characteristics
10V
T = 150°C
5V
4.5V
ID Drain Current (A)
ID Drain Current (A)
T = 25°C
10
4V
1
3.5V
VGS
0.1
3V
0.01
3.5V
1
1
2V
10
0.1
T = 25°C
0.01
2
3
4
5
VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
Normalised RDS(on) and VGS(th)
T = 150°C
2.0
VGS = 10V
1.8
ID = 12A
1.6
RDS(on)
1.4
1.2
1.0
0.8
VGS = VDS
0.6
ID = 250uA
0.4
-50
0
VGS(th)
50
100
Tj Junction Temperature (°C)
150
Normalised Curves v Temperature
100
3V
VGS
3.5V
10
4V
1
4.5V
5V
0.1
10V
T = 25°C
0.01
0.01
0.1
1
10
ID Drain Current (A)
On-Resistance v Drain Current
ISD Reverse Drain Current (A)
ID Drain Current (A)
1
1
10
Output Characteristics
VDS = 10V
0.1
1
VDS Drain-Source Voltage (V)
1E-3
RDS(on) Drain-Source On-Resistance (Ω)
2.5V
VGS
Output Characteristics
Document Revision: 1
3V
0.1
VDS Drain-Source Voltage (V)
DMN6068LK3
4.5V
4V
10
0.01
0.1
10
10V
10
T = 150°C
1
T = 25°C
0.1
Vgs = 0V
0.01
0.2
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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Typical Characteristics - continued
600
f = 1MHz
CISS
400
COSS
CRSS
200
0
0.1
1
10
VGS Gate-Source Voltage (V)
C Capacitance (pF)
10
VGS = 0V
8
6
4
0
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
VDS = 30V
2
ID = 12A
0
2
4
6
8
10
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test Circuits
Current
regulator
QG
50k
12V
VG
Q GS
Same as
D.U.T
Q GD
V DS
IG
D.U.T
ID
V GS
Charge
Basic gate charge waveform
Gate charge test circuit
V DS
90%
RD
V GS
V DS
RG
VDD
10%
V GS
td(on)
tr
t(on)
td(off)
tr
t(on)
Switching time waveforms
DMN6068LK3
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Switching time test circuit
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DMN6068LK3
Package Outline Dimensions
DIM
Inches
Millimeters
Min
Max
Min
DIM
Max
Inches
Min
Millimeters
Max
Min
A
0.086
0.094
2.18
2.39
e
A1
-
0.005
-
0.127
H
0.370
0.410
9.40
10.41
b
0.020
0.035
0.508
0.89
L
0.055
0.070
1.40
1.78
b2
0.030
0.045
0.762
1.14
L1
0.108 REF
2.74 REF
b3
0.205
0.215
5.21
5.46
L2
0.020 BSC
0.508 BSC
c
0.018
0.024
0.457
0.61
L3
0.035
0.065
0.89
1.65
c2
0.018
0.023
0.457
0.584
L4
0.025
0.040
0.635
1.016
D
0.213
0.245
5.41
6.22
L5
0.045
0.060
1.14
1.52
D1
0.205
-
5.21
-
θ1°
0°
10°
0°
10°
E
0.250
0.265
6.35
6.73
θ°
0°
15°
0°
15°
E1
0.170
-
4.32
-
-
-
-
-
-
DMN6068LK3
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0.090 BSC
Max
2.29 BSC
July 2009
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Diodes Incorporated
DMN6068LK3
Suggested Pad Layout
6.2
0.244
3.0
0.118
5.8
0.228
1.6
0.063
2.58
0.101
6.17
0.243
mm
inches
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
B.
Life support devices or systems are devices or systems which:
1.
are intended to implant into the body, or
2.
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