NTGS3441T1 Power MOSFET 1 Amp, 20 Volts P−Channel TSOP−6 http://onsemi.com Features • • • • Ultra Low RDS(on) Higher Efficiency Extending Battery Life Miniature TSOP−6 Surface Mount Package Pb−Free Package is Available 1 AMPERE 20 VOLTS RDS(on) = 90 m Applications • Power Management in Portable and Battery−Powered Products, i.e.: P−Channel Cellular and Cordless Telephones, and PCMCIA Cards 1 2 5 6 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage − Continuous VGS 8.0 V Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp 10 S) RJA Pd ID IDM 244 0.5 −1.65 −10 °C/W W A A Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp 10 S) RJA Pd ID IDM 128 1.0 −2.35 −14 °C/W W A A Thermal Resistance Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp 10 S) RJA Pd ID IDM 62.5 2.0 −3.3 −20 °C/W W A A Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C Maximum Lead Temperature for Soldering Purposes for 10 Seconds TL 260 °C 3 4 MARKING DIAGRAM TSOP−6 CASE 318G STYLE 1 1 PT W 1 PT W = Device Code = Work Week PIN ASSIGNMENT Drain Drain Source 6 5 4 1. Minimum FR−4 or G−10PCB, operating to steady state. 2. Mounted onto a 2″ square FR−4 board (1″ sq. 2 oz. cu. 0.06″ thick single sided), operating to steady state. 3. Mounted onto a 2″ square FR−4 board (1″ sq. 2 oz. cu. 0.06″ thick single sided), t 5.0 seconds. 1 2 3 Drain Drain Gate ORDERING INFORMATION Device NTGS3441T1 NTGS3441T1G Package TSOP−6 Shipping† 3000 / Tape & Reel TSOP−6 3000 / Tape& Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2004 April, 2004 − Rev. 4 1 Publication Order Number: NTGS3441T1/D NTGS3441T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Notes 4 & 5) Symbol Characteristic Min Typ Max Unit −20 − − − − − − −1.0 −5.0 − − −100 − − 100 −0.45 −1.05 −1.50 − − 0.069 0.117 0.090 0.135 − 6.8 − Ciss − 480 − pF Coss − 265 − pF Crss − 100 − pF td(on) − 13 25 ns tr − 23.5 45 ns td(off) − 27 50 ns tf − 24 45 ns Qtot − 6.2 14 nC OFF CHARACTERISTICS V(BR)DSS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = −10 A) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = −20 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = −20 Vdc, TJ = 70°C) IDSS Gate−Body Leakage Current (VGS = −8.0 Vdc, VDS = 0 Vdc) IGSS Gate−Body Leakage Current (VGS = +8.0 Vdc, VDS = 0 Vdc) IGSS Vdc Adc nAdc nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = −250 Adc) VGS(th) Static Drain−Source On−State Resistance (VGS = −4.5 Vdc, ID = −3.3 Adc) (VGS = −2.5 Vdc, ID = −2.9 Adc) RDS(on) Forward Transconductance (VDS = −10 Vdc, ID = −3.3 Adc) Vdc gFS mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = −5.0 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = −20 Vdc, ID = −1.6 Adc, VGS = −4.5 Vdc, Rg = 6.0 ) Fall Time Total Gate Charge Gate−Source Charge (VDS = −10 Vdc, VGS = −4.5 Vdc, ID = −3.3 Adc) Gate−Drain Charge Qgs − 1.3 − nC Qgd − 2.5 − nC BODY−DRAIN DIODE RATINGS Diode Forward On−Voltage (IS = −1.6 Adc, VGS = 0 Vdc) VSD − −0.88 −1.2 Vdc Diode Forward On−Voltage (IS = −3.3 Adc, VGS = 0 Vdc) VSD − −0.98 − Vdc (IS = −1.6 Adc, dIS/dt = 100 A/s) trr − 30 60 ns Reverse Recovery Time 4. Indicates Pulse Test: P.W. = 300 sec max, Duty Cycle = 2%. 5. Handling precautions to protect against electrostatic discharge is mandatory. http://onsemi.com 2 NTGS3441T1 TYPICAL ELECTRICAL CHARACTERISTICS TJ = 25°C 20 VGS = −2.7 V 8 −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 10 VGS = −2.5 V 6 VGS = −3 V VGS = −3.5 V VGS = −4 V VGS = −4.5 V VGS = −6 V V 4 GS = −2 V 2 VGS = −10 V 0.8 0.4 1.2 1.6 TJ = −55°C 12 TJ = 100°C 8 4 0 0.4 2 1.2 1.6 2 2.4 2.8 3.2 3.6 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 4 0.28 0.3 0.2 0.1 3 2 4 6 5 7 8 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), DRAIN−TO−SOURCE RESISTANCE () ID = −3.3 A TJ = 25°C 0 TJ = 25°C 0.24 VGS = −2.5 V 0.2 0.16 0.12 VGS = −4.5 V 0.08 0.04 0 0 12 16 20 VGS = 0 V TJ = 125°C 1.2 1 0.8 0.6 −50 8 Figure 4. On−Resistance vs. Drain Current and Gate Voltage ID = −3.3 A VGS = −4.5 V −IDSS, LEAKAGE (nA) 1.4 4 −ID, DRAIN CURRENT (AMPS) 100 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0.8 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.4 RDS(on), DRAIN−TO−SOURCE RESISTANCE () TJ = 25°C 16 VGS = −1.5 V 0 0 VDS> = −10 V 10 TJ = 100°C 1 TJ = 25°C 0.1 −25 0 25 50 75 100 125 150 0 4 8 12 16 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTGS3441T1 TYPICAL ELECTRICAL CHARACTERISTICS VDS = 0 V VGS = 0 V TJ = 25°C −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 1200 C, CAPACITANCE (pF) Ciss 900 Crss 600 Ciss 300 Coss Crss 0 8 4 −VGS 0 4 8 12 16 8 6 QT 4 Qgs VDD = −20 V ID = −3.3 A TJ = 25°C 2 0 20 0 4 6 8 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 7. Capacitance Variation 10 1.3 −IS, SOURCE CURRENT (AMPS) VGS(th), GATE THRESHOLD VOLTAGE (NORMALIZED) 2 −VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) ID = −250 A 1.2 1.1 1 0.9 0.8 0.7 0.6 −50 Qgd −25 0 25 50 75 100 125 150 VGS = 0 V TJ = 25°C 8 6 4 2 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 TJ, JUNCTION TEMPERATURE (°C) −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Gate Threshold Voltage Variation with Temperature Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 1.4 NTGS3441T1 TYPICAL ELECTRICAL CHARACTERISTICS 20 POWER (W) 16 12 8 4 0 0.01 0.10 1.00 10.00 100.00 TIME (sec) NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE Figure 11. Single Pulse Power 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E−04 Single Pulse 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 SQUARE WAVE PULSE DURATION (sec) Figure 12. Normalized Thermal Transient Impedance, Junction−to−Ambient http://onsemi.com 5 1E+03 NTGS3441T1 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. A L 6 S 1 5 4 2 3 B MILLIMETERS DIM MIN MAX A 2.90 3.10 B 1.30 1.70 C 0.90 1.10 D 0.25 0.50 G 0.85 1.05 H 0.013 0.100 J 0.10 0.26 K 0.20 0.60 L 1.25 1.55 M 0 10 S 2.50 3.00 D G M J C 0.05 (0.002) K H INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0 10 0.0985 0.1181 STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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