NTJD4001N Small Signal MOSFET 30 V, 250 mA, Dual N−Channel, SC−88 Features • • • • Low Gate Charge for Fast Switching Small Footprint − 30% Smaller than TSOP−6 ESD Protected Gate Pb−Free Package for Green Manufacturing (G Suffix) http://onsemi.com V(BR)DSS 250 mA 30 V 1.5 @ 2.5 V Low Side Load Switch Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC Buck Converters Level Shifts SOT−363 SC−88 (6 LEADS) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 250 mA Continuous Drain Current (Note 1) Steady State TA = 25 °C Power Dissipation (Note 1) Steady State TA = 25 °C PD 272 mW t =10 µs IDM 600 mA TJ, TSTG −55 to 150 °C Pulsed Drain Current TA = 85 °C Operating Junction and Storage Temperature 180 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View MARKING DIAGRAM 6 Source Current (Body Diode) IS 250 mA Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C 1. ID Max 1.0 @ 4.0 V Applications • • • • RDS(on) TYP Surface mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces). 1 TED SC−88 / SOT−363 CASE 419B STYLE 26 TE D = Device Code = Date Code PIN ASSIGNMENT 1 6 Source−1 Drain−1 Gate−1 Gate−2 Drain−2 Source−2 Top View ORDERING INFORMATION Device NTJD4001NT1 NTJD4001NT1G Semiconductor Components Industries, LLC, 2003 August, 2003 − Rev. 0 1 Package Shipping SC−88 3000 Units/Reel SC−88 (Pb−Free) 3000 Units/Reel Publication Order Number: NTJD4001N/D NTJD4001N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 µA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS V mV/ °C 56 Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 30 V 1.0 µA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±10 V ±1.0 µA VGS(TH) VGS = VDS, ID = 100 µA 1.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) ( ) 0.8 1.2 mV/ °C −3.2 VGS = 4.0 V, ID = 10 mA 1.0 1.5 VGS = 2.5 V, ID = 10 mA 1.5 2.5 gFS VDS = 3.0 V, ID = 10 mA 80 Input Capacitance CISS 33 COSS VGS = 0 V, f = 1.0 MHz, VDS = 5 5.0 0V 20 Output Capacitance 19 32 Reverse Transfer Capacitance CRSS 7.25 12 0.9 1.3 Forward Transconductance Ω mS CHARGES AND CAPACITANCES VGS = 5.0 V, VDS = 24 V, ID = 0 0.1 1A Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS 0.3 Gate−to−Drain Charge QGD 0.2 pF nC 0.2 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr VGS = 4.5 V, VDD = 5.0 V, ID = 10 mA mA, RG = 50 Ω ns 17 23 td(OFF) 94 tf 82 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD tRR VGS = 0 V, IS = 10 mA TJ = 25°C 0.65 TJ = 125°C 0.45 VGS = 0 V, dIS/dt = 8.0 A/µs, IS = 10 mA 2. Pulse Test: pulse width ≤ 300 µs, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 12.4 0.7 V ns NTJD4001N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS = 10 V to 3 V 0.18 0.16 2.5 V 0.14 ID, DRAIN CURRENT (AMPS) VGS = 2.75 V 2.25 V 0.12 0.1 0.08 2V 0.06 0.04 1.75 V 1.5 V 0.02 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE () 0.1 TJ = 25°C 0.4 0.8 1.2 1.6 VDS = 5 V 0.08 0.06 TJ = 125°C 0.04 25°C 0.02 TJ = −55°C 0 2 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 1.2 1.4 1.6 2 1.8 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE () ID, DRAIN CURRENT (AMPS) 0.2 1.25 VGS = 10 V TJ = 125°C 1.0 0.75 TJ = 25°C 0.5 TJ = −55°C 0.25 0.005 0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS) 0.205 1.25 TJ = 25°C 1.0 VGS = 4.5 V 0.75 VGS = 10 V 0.5 0.25 0.005 0.205 10000 2 ID = 0.01 A VGS = 10 V VGS = 0 V 1.6 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance vs. Drain Current and Gate Voltage Figure 3. On−Resistance vs. Drain Current and Temperature 1.8 2.2 1.4 1000 1.2 1 0.8 0.6 TJ = 150°C 100 0.4 TJ = 125°C 0.2 0 −50 10 −25 0 25 50 75 100 125 150 0 TJ, JUNCTION TEMPERATURE (°C) 5 10 15 20 25 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTJD4001N C, CAPACITANCE (pF) 50 VDS = 0 V 40 Ciss 30 Crss VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) TJ = 25°C VGS = 0 V 20 Ciss Coss 10 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 5 QG 4 3 QGS QGD 2 1 ID = 0.1 A TJ = 25°C 0 0 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.6 0.2 0.4 0.8 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source Voltage vs. Total Gate Charge Figure 7. Capacitance Variation IS, SOURCE CURRENT (AMPS) 0.1 VGS = 0 V TJ = 25°C 0.08 0.06 0.04 0.02 0 0.5 0.55 0.6 0.65 0.7 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Diode Forward Voltage vs. Current http://onsemi.com 4 0.75 1 NTJD4001N PACKAGE DIMENSIONS SC−88 (SOT−363) CASE 419B−02 ISSUE R A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. G 6 5 4 DIM A B C D G H J K N S −B− S 1 2 3 D 6 PL 0.2 (0.008) M B M N J C H K http://onsemi.com 5 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 NTJD4001N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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