NEC NESG210833-A Npn sige rf transistor for uhf-band, low noise, low distortion amplification 3-pin minimold (33 pkg) Datasheet

DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG210833
NPN SiGe RF TRANSISTOR FOR
UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION
3-PIN MINIMOLD (33 PKG)
FEATURES
• The device is an ideal choice for low noise, low distortion amplification.
NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz
NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz
• PO (1 dB) = 18.5 dBm TYP. @ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz
• OIP3 = 31 dBm TYP. @ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz
• Maximum stable power gain: MSG =16.0 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz
• SiGe HBT technology (UHS2) : fT = 15.5 GHz
• 3-pin minimold (33 PKG)
ORDERING INFORMATION
Part Number
NESG210833
Order Number
Package
NESG210833-A
NESG210833-T1B
Quantity
Supplying Form
3-pin minimold
50 pcs
• 8 mm wide embossed taping
(33 PKG) (Pb-Free)
(Non reel)
• Pin 3 (Collector) face the perforation side
NESG210833-T1B-A
3 kpcs/reel
of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
5.5
V
Collector to Emitter Voltage
VCES
13
V
Collector to Emitter Voltage
VCEO
5.5
V
Note 1
IB
36
mA
Collector Current
IC
100
mA
480
mW
Base Current
<R>
Total Power Dissipation
Ptot
Note 2
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Notes 1. Depend on the ESD protect device.
2. Mounted on 3.8 cm × 9.0 cm ×0.8 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10765EJ02V0DS (2nd edition)
Date Published November 2009 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2009
NESG210833
THERMAL RESISTANCE (TA = +25°C)
Parameter
<R>
Termal Resistance from Junction to
Ambient
Symbol
Ratings
Unit
Rthj-a
260
°C/W
Note
Note Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−
−
100
nA
Emitter Cut-off Current
IEBO
VEB = 0.4 V, IC = 0 mA
−
−
100
nA
140
180
260
−
DC Current Gain
Reverse Transfer Capacitance
hFE
Note 1
VCE = 5 V, IC = 5 mA
Cre
Note 2
VCB = 5 V, IE = 0 mA, f = 1 MHz
−
0.5
0.7
pF
VCE = 5 V, IC = 30 mA, f = 1 GHz
−
15.5
−
GHz
⏐S21e⏐
VCE = 5 V, IC = 30 mA, f = 1 GHz
12.5
14.5
−
dB
NF1
VCE = 5 V, IC = 5 mA, f = 1 GHz,
−
0.7
1.1
dB
RF Characteristics
Gain Bandwidth Product
fT
2
Insertion Power Gain
Noise Figure (1)
ZS = ZSopt, ZL = 50 Ω
Noise Figure (2)
NF2
VCE = 5 V, IC = 30 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
−
0.9
−
dB
Associated Gain (1)
Ga1
VCE = 5 V, IC = 5 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50 Ω
11
13
−
dB
Associated Gain (2)
Ga2
VCE = 5 V, IC = 30 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
−
14.5
−
dB
VCE = 5 V, IC = 30 mA, f = 1 GHz
14
16
−
dB
VCE = 5 V, IC (set) = 30 mA, f = 1 GHz,
−
18.5
−
dBm
−
31
−
dBm
Maximum Stable Power Gain
Gain 1 dB Compression Output
MSG
Note 3
PO (1 dB)
ZS = ZSopt, ZL = ZLopt
Power
Output 3rd Order Intercept Point
OIP3
VCE = 5 V, IC (set) = 30 mA, f = 1 GHz,
Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded.
3. MSG =
S21
S12
hFE CLASSIFICATION
2
Rank
FB
Marking
R7C
hFE Value
140 to 260
Data Sheet PU10765EJ02V0DS
NESG210833
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Total Power Dissipation Ptot (mW)
1 000
Reverse Transfer Capacitance Cre (pF)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
3.8 cm × 9.0 cm × 0.8mm (t),
FR–4
500
480
0
0
25
50
75
100
125
150
0.8
f = 1 MHz
0.7
0.6
0.5
0.4
0.3
0.2
0
2
3
4
5
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 5 V
VCE = 3 V
10
Collector Current IC (mA)
Collector Current IC (mA)
1
Ambient Temperature TA (°C)
100
1
0.1
0.01
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
10
1
0.1
0.01
0.001
0.0001
0.4
Base to Emitter Voltage VBE (V)
0.5
0.6
0.7
0.8
0.9
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
Collector Current IC (mA)
<R>
1 000 μA
800 μA
900 μA
700 μA
80
600 μA
500 μA
60
400 μA
300 μA
40
200 μA
20
IB = 100 μA
0
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10765EJ02V0DS
3
NESG210833
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
1 000
VCE = 5 V
DC Current Gain hFE
DC Current Gain hFE
VCE = 3 V
100
10
1
0.1
1
10
100
10
1
0.1
100
Collector Current IC (mA)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
Gain Bandwidth Product fT (GHz)
VCE = 3 V,
f = 1 GHz
15
10
5
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
0
1
10
VCE = 5 V,
f = 1 GHz
15
10
5
0
1
100
100
Collector Current IC (mA)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
VCE = 3 V,
IC = 5 mA
30
25
MSG
20
MAG
MAG
MSG
15
2
|S21e|
10
5
1
10
35
VCE = 3 V,
IC = 30 mA
30
25
MSG
MAG
20
MAG
15
MSG
2
|S21e|
10
Frequency f (GHz)
5
0
0.1
1
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
4
10
Collector Current IC (mA)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Gain Bandwidth Product fT (GHz)
20
0
0.1
100
10
1
Data Sheet PU10765EJ02V0DS
10
NESG210833
35
VCE = 5 V,
IC = 5 mA
30
25
MSG
20
MAG
15
MAG
|S21e|2
MSG
10
5
0
0.1
1
10
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
VCE = 5 V,
IC = 30 mA
30
25
MSG
MAG
20
MAG
MSG
15
|S21e|2
10
5
0
0.1
1
10
Frequency f (GHz)
Frequency f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
VCE = 3 V,
f = 1 GHz
MSG
MAG
15
|S21e|2
10
5
0
1
10
100
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
20
VCE = 5 V,
f = 1 GHz
MAG
MSG
15
10
|S21e|2
5
0
1
Collector Current IC (mA)
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10765EJ02V0DS
5
NESG210833
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
3
14
Ga
12
10
2
8
6
1
4
NF
2
0
1
0
100
10
Output 3rd Order Intercept Point OIP3 (dBm)
16
VCE = 5 V,
f = 1 GHz,
ZS = ZSopt,
ZL = 50 Ω
Associated Gain Ga (dB)
Noise Figure NF (dB)
4
OUTPUT 3RD ORDER INTERCEPT POINT
vs. COLLECTOR CURRENT
40
VCE = 5 V,
f1 = 1.000 GHz,
f2 = 1.001 GHz
30
20
10
0
1
10
Collector Current IC (mA)
OUTPUT POWER, LINEAR GAIN,
COLLECTOR CURRENT vs. INPUT POWER
400
VCE = 5 V,
IC (set) = 40 mA ,
f = 1 GHz
300
Pout
GL
10
200
0
100
IC
–10
–20
–15
–10
–5
0
5
10
0
15
Collector Current IC (mA)
Output Power Pout (dBm)
Linear Gain GL (dB)
30
Each Output Power Pout (each) (dBm)
3rd Order Intermodulation Distortion IM3 (dB)
Collector Current IC (mA)
20
100
EACH OUTPUT POWER, IM3
vs. EACH INPUT POWER
40
30
20
10
0
Pout
–10
–20
–30
–40
–50
–60
–70
–80
–20
Input Power Pin (dBm)
VCE = 5 V,
IC (set) = 40 mA ,
f1 = 1.000 GHz,
f2 = 1.001 GHz
IM3
–10
0
10
20
30
Each Input Power Pin (each) (dBm)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
of the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.necel.com/microwave/en/
6
Data Sheet PU10765EJ02V0DS
NESG210833
PACKAGE DIMENSIONS
3-PIN MINIMOLD (33 PKG) (UNIT: mm)
0.65+0.1
–0.15
1
3
0.4+0.1
–0.05
0.95
2
0.95
1.5
R7C
Marking
0 to 0.1
1.1 to 1.4
0.16+0.1
–0.05
0.3
2.9±0.2
0.4+0.1
–0.05
2.8±0.2
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Data Sheet PU10765EJ02V0DS
7
NESG210833
• The information in this document is current as of November, 2009. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products
and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E0904E
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