NTE NTE351 Silicon npn transistor rf power amp, driver Datasheet

NTE351
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE351 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V
VHF large–signal power amplifier applications required in commercial and industrial equipment to
300MHz.
Features:
D Specified 12.5V, 175MHz Characteristics:
Output Power = 25W
Minimum Gain = 6.2dB
Efficiency = 65%
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Device Dissipation (Note 1, TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 370mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
V(BR)CEO IC = 100mA, IB = 0
18
–
–
V
V(BR)CES IC = 15mA, VBE = 0
36
–
–
V
V(BR)EBO IE = 5mA, IC = 0
4
–
–
V
OFF Characteristics
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
ICBO
VCB = 15V, IE = 0
–
–
1.0
mA
ICES
VCE = 15V, VBE = 0, TC = +55°C
–
–
10
mA
hFE
IC = 1A, VCE = 5V
5
–
–
ON Characteristics
DC Current Gain
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
–
110
130
pF
Dynamic Characteristics
Output Capacitance
Cob
VCB = 15V, IE = 0, f = 0.1MHz
Functional Tests (VCC = 12.5V unless otherwise specified)
Common–Emitter Amplifier
Power Gain
GPE
Pout = 25W, f = 175MHz
6.2
–
–
dB
η
Pout = 25W, f = 175MHz
65
–
–
%
Collector Efficiency
1.040 (26.4) Max
.520 (13.2)
C
.230
(5.84)
E
E
B
.100 (2.54)
.385 (9.8)
Dia
.005 (0.15)
.168 (4.27)
8–32–NC–3A
Wrench Flat
.750
(19.05)
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