Infineon IPD60R385CP Coolmos power transistor Datasheet

IPD60R385CP
CoolMOSTM Power Transistor
Product Summary
Features
V DS @ Tj,max
• Worldwide best R ds,on in TO252
650
0.385 Ω
R DS(on),max
• Ultra low gate charge
V
Q g,typ
17
nC
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
PG-TO252
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Type
Package
Ordering Code
Marking
IPD60R385CP
PG-TO252
SP000062533
6R385P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
9.0
T C=100 °C
5.7
Pulsed drain current2)
I D,pulse
T C=25 °C
27
Avalanche energy, single pulse
E AS
I D=3.4 A, V DD=50 V
227
Avalanche energy, repetitive t AR2),3)
E AR
I D=3.4 A, V DD=50 V
0.3
Avalanche current, repetitive t AR2),3)
I AR
MOSFET dv /dt ruggedness
dv /dt
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Rev. 2.0
Unit
A
mJ
3
A
V DS=0...480 V
50
V/ns
static
±20
V
AC (f >1 Hz)
±30
T C=25 °C
83
W
-55 ... 150
°C
page 1
2006-04-04
IPD60R385CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous diode forward current
IS
Diode pulse current 2)
I S,pulse
Reverse diode dv /dt 4)
dv /dt
Parameter
Symbol Conditions
Value
Unit
5.2
T C=25 °C
A
27
15
V/ns
Values
Unit
min.
typ.
max.
-
-
1.5
SMD version, device
on PCB, minimal
footprint
-
-
62
SMD version, device
on PCB, 6 cm2 cooling
area5)
-
35
-
reflow MSL3
-
-
260
°C
V
Thermal characteristics
Thermal resistance, junction - case
R thJC
R thJA
Thermal resistance, junction ambient
Soldering temperature,
reflowsoldering
T sold
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=0.34 mA
2.5
3
3.5
Zero gate voltage drain current
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
-
1
V DS=600 V, V GS=0 V,
T j=150 °C
-
10
-
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=5.2 A,
T j=25 °C
-
0.35
0.385
Ω
V GS=10 V, I D=5.2 A,
T j=150 °C
-
0.94
-
f =1 MHz, open drain
-
1.8
-
Gate resistance
Rev. 2.0
RG
page 2
Ω
2006-04-04
IPD60R385CP
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
790
-
-
38
-
-
36
-
-
300
-
-
10
-
-
5
-
-
40
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
related6)
C o(er)
Effective output capacitance, time
related7)
C o(tr)
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
-
5
-
Gate to source charge
Q gs
-
4
-
Gate charge at threshold
Q g(th)
-
4.6
6.2
Gate to drain charge
Q gd
-
6
-
Switching charge
Q sw
-
12
17
Gate charge total
Qg
-
17
22
Gate plateau voltage
V plateau
-
5.0
-
V
-
0.9
1.2
V
-
260
-
ns
-
3.1
-
µC
-
24
-
A
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=9.9 A,
R G=6.8 Ω
pF
ns
Gate Charge Characteristics
V DD=400 V, I D=5.2 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
V GS=0 V, I F=5.2 A,
T j=25 °C
V R=400 V, I F=I S,
di F/dt =100 A/µs
1)
J-STD20 and JESD22
2)
Pulse width t p limited by T j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
ISD=ID, di/dt<=400A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch
5)
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection.
PCB is without blown air.
6)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
7)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2006-04-04
IPD60R385CP
1 Power dissipation
2 Safe operating area
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
100
limited by on-state
resistance
80
1 µs
10 µs
101
60
I D [A]
P tot [W]
100 µs
1 ms
40
DC
100
10 ms
20
0
10-1
0
40
80
120
160
100
101
102
103
V DS [V]
T C [°C]
3 Max. transient thermal impedance
4 Typ. output characteristics
Z thJC=f(t P)
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
101
25
20 V
8V
7V
10 V
20
100
6V
0.5
Z thJC [K/W]
15
I D [A]
0.2
0.1
10-1
5.5 V
10
0.05
0.02
0.01
5V
5
single pulse
4.5 V
0
10-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t p [s]
Rev. 2.0
0
5
10
15
20
V DS [V]
page 4
2006-04-04
IPD60R385CP
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C
R DS(on)=f(I D); T j=150 °C
parameter: V GS
parameter: V GS
1.6
16
8V
14
1.4
7V
10 V
5.5 V
5V
20 V
12
6V
6.5 V
1.2
5.5 V
7V
1
R DS(on) [Ω]
I D [A]
10
8
6V
5V
20 V
0.8
0.6
6
4.5 V
4
0.4
2
0.2
0
0
0
5
10
15
0
20
5
10
15
I D [A]
V DS [V]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=5.2 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
1.2
40
36
1
32
28
0.8
24
I D [A]
R DS(on) [Ω]
C °25
0.6
C °150
16
98 %
0.4
20
typ
12
8
0.2
4
0
0
-60
-20
20
60
100
140
180
2
4
6
8
10
V GS [V]
T j [°C]
Rev. 2.0
0
page 5
2006-04-04
IPD60R385CP
9 Typ. gate charge
10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=5.2 A pulsed
I F=f(V SD)
parameter: V DD
parameter: T j
102
10
9
8
120 V
7
400 V
150 °C, 98%
25 °C
150 °C
101
I F [A]
V GS [V]
6
5
4
100
3
25 °C, 98%
2
1
0
10-1
0
5
10
15
20
0
0.5
1
Q gate [nC]
1.5
2
V SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E AS=f(T j); I D=3.4 A; V DD=50 V
V BR(DSS)=f(T j); I D=0.25 mA
250
700
200
660
E AS [mJ]
V BR(DSS) [V]
150
100
620
580
50
0
540
20
60
100
140
180
T j [°C]
Rev. 2.0
-60
-20
20
60
100
140
180
T j [°C]
page 6
2006-04-04
IPD60R385CP
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
104
6
5
Ciss
103
E oss [µJ]
C [pF]
4
102
Coss
3
2
101
1
Crss
100
0
0
100
200
300
400
500
V DS [V]
Rev. 2.0
0
100
200
300
400
500
600
V DS [V]
page 7
2006-04-04
IPD60R385CP
Definition of diode switching characteristics
Rev. 2.0
page 8
2006-04-04
IPD60R385CP
PG-TO252-3-1/TO252-3-11/TO252-3-21: Outlines
Dimensions in mm/inches:
Dimensions in mm/inches:
Rev. 2.0
page 9
2006-04-04
IPD60R385CP
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions o
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typica
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o
non-infringement of intellectual property rights of any third party
Information
For further information on technology, delivery terms and conditions and prices please contact your neares
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev. 2.0
page 10
2006-04-04
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