STMicroelectronics BUT32V Npn transistor power module Datasheet

BUT32V
®
NPN TRANSISTOR POWER MODULE
■
■
■
■
■
HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW Rth JUNCTION CASE
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS:
MOTOR CONTROL
■ SMPS & UPS
■ DC/DC & DC/AC CONVERTERS
■
Pin 4 not connected
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V CEV
Parameter
Collector-Emitter Voltage (V BE = -5 V)
V CEO(sus) Collector-Emitter Voltage (I B = 0)
V EBO
IC
I CM
IB
Emitter-Base Voltage (I C = 0)
Collector Current
Collector Peak Current (t p = 10 ms)
Value
Unit
400
V
300
V
7
V
80
A
120
A
Base Current
16
A
I BM
Base Peak Current (t p = 10 ms)
24
A
P tot
Total Dissipation at T c = 25 o C
250
W
V isol
Insulation Withstand Voltage (RMS) from All
Four Terminals to External Heatsink
Storage Temperature
T stg
Tj
Max. Operating Junction Temperature
February 2003
2500
-55 to 150
o
C
150
o
C
1/7
BUT32V
THERMAL DATA
R thj-case
R thc-h
Thermal Resistance Junction-case
Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
0.5
o
C/W
0.05
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
I CER
Collector Cut-off
Current (R BE = 5 Ω)
V CE = V CEV
V CE = V CEV
T c = 100 o C
I CEV
Collector Cut-off
Current (V BE = -5)
V CE = V CEV
V CE = V CEV
T c = 100 C
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
I EBO
Typ.
o
Max.
Unit
1
5
mA
mA
1
4
mA
mA
1
mA
I C = 0.2 A
V clamp = 300 V
L = 25 mH
DC Current Gain
I C = 40 A
V CE = 5 V
16
Collector-Emitter
Saturation Voltage
I C = 40 A
I C = 40 A
o
0.6
1.2
0.9
1.9
V
V
Base-Emitter
Saturation Voltage
I C = 40 A
I C = 40 A
1.12
1.1
1.3
1.3
V
V
Rate of Rise of
On-state Collector
V CC = 300 V
t p = 3 µs
T c = 100 o C
RC = 0
I B1 = 6 A
V CE (3 µs) Collector-Emitter
Dynamic Voltage
V CC = 300 V
I B1 = 6 A
R C = 6.2 Ω
T c = 100 o C
3
6
V
VCE (5 µs) Collector-Emitter
Dynamic Voltage
V CC = 300 V
I B1 = 6 A
R C = 6.2 Ω
T c = 100 o C
1.8
3
V
Storage Time
Fall Time
Cross-over Time
I C = 40 A
V BB = -5 V
V clamp = 300 V
L = 0.3 mH
V CC = 250 V
R BB = 0.6 Ω
I B1 = 4 A
T c = 100 o C
1.9
0.12
0.35
3
0.4
0.7
µs
µs
µs
Maximum Collector
Emitter Voltage
Without Snubber
I CWoff = 60 A
V BB = -5 V
L = 42 µH
T c = 125 o C
I B1 = 4 A
V CC = 50 V
R BB = 0.6 Ω
VCEO(sus) * Collector-Emitter
Sustaining Voltage
(I B = 0)
h FE ∗
V CE(sat) ∗
V BE(sat) ∗
di C /dt
ts
tf
tc
V CEW
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/7
IB = 4 A
IB = 4 A
IB = 4 A
IB = 4 A
300
T c = 100 C
o
T c = 100 C
120
300
V
180
A/µs
V
BUT32V
Safe Operating Areas
Thermal Impedance
Derating Curve
Collector-emitter Voltage Versus
base-emitter Resistance
Collector Emitter Saturation Voltage
Base-Emitter Saturation Voltage
3/7
BUT32V
Reverse Biased SOA
Foward Biased SOA
Reverse Biased AOA
Forward Biased AOA
Switching Times Inductive Load
Switching Times Inductive Load Versus
Temperature
4/7
BUT32V
Dc Current Gain
Turn-on Switching Test Circuit
(1) Fast electronics switch
(2) Non-inductive load
Turn-on Switching Waveforms
Turn-off Switching Test Circuit
(1) Fast electronic switch
(3) Fast recovery rectifier
Turn-off Switching Waveforms
(2) Non-inductive load
5/7
BUT32V
ISOTOP MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
11.8
12.2
0.465
0.480
A1
8.9
9.1
0.350
0.358
B
7.8
8.2
0.307
0.322
C
0.75
0.85
0.029
0.033
C2
1.95
2.05
0.076
0.080
D
37.8
38.2
1.488
1.503
D1
31.5
31.7
1.240
1.248
E
25.15
25.5
0.990
1.003
E1
23.85
24.15
0.938
0.950
E2
24.8
0.976
G
14.9
15.1
0.586
0.594
G1
12.6
12.8
0.496
0.503
G2
3.5
4.3
0.137
1.169
F
4.1
4.3
0.161
0.169
F1
4.6
5
0.181
0.196
P
4
4.3
0.157
0.169
P1
4
4.4
0.157
0.173
S
30.1
30.3
1.185
1.193
P093A
6/7
BUT32V
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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