Microsemi APTM50AM38SCTG Phase leg series & sic parallel diodes mosfet power module Datasheet

APTM50AM38SCTG
Phase leg
Series & SiC parallel diodes
MOSFET Power Module
VDSS = 500V
RDSon = 38mΩ typ @ Tj = 25°C
ID = 90A @ Tc = 25°C
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
NTC2
VBUS
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
Q1
G1
OUT
S1
•
Q2
G2
0/VBU S
•
•
S2
NTC1
•
•
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
OUT
S1
S2
NTC2
G1
G2
NTC1
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
500
90
67
360
±30
45
694
46
50
2500
Unit
V
A
V
mΩ
W
A
July, 2006
VBUS
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–8
APTM50AM38SCTG – Rev 2
OUT
0/ VBUS
Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
APTM50AM38SCTG
All ratings @ Tj = 25°C unless otherwise specified
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGS = 0V,VDS = 500V
Tj = 25°C
VGS = 0V,VDS = 400V
T j = 125°C
VGS = 10V, ID = 45A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
IRM
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
38
Min
Max
Unit
µA
mΩ
V
nA
nF
nC
18
35
Test Conditions
77
906
1490
µJ
1692
Typ
Max
500
750
Tj = 125°C
90
1.1
1.4
0.9
Tj = 25°C
24
Tj = 125°C
48
Tj = 25°C
99
Tj = 125°C
450
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µJ
1452
Min
200
Tj = 25°C
Tj = 125°C
Tc = 85°C
ns
87
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 90A, R G = 2Ω
IF = 90A
VR = 133V
di/dt = 600A/µs
Unit
130
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 90A, R G = 2Ω
IF = 90A
IF = 180A
IF = 90A
Typ
11.2
2.36
0.18
246
Max
200
1000
45
5
±150
66
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 90A
R G = 2Ω
VR=200V
Typ
3
VGS = 10V
VBus = 250V
ID = 90A
Series diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
Min
Unit
V
µA
A
1.15
V
July, 2006
IDSS
Characteristic
ns
nC
2–8
APTM50AM38SCTG – Rev 2
Electrical Characteristics
Symbol
APTM50AM38SCTG
Parallel diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=600V
Min
600
Tj = 25°C
Tj = 175°C
Tc = 125°C
Tj = 25°C
Tj = 175°C
Typ
Max
250
500
50
1.6
2.0
1000
5000
IF
DC Forward Current
VF
Diode Forward Voltage
IF = 50A
QC
Total Capacitive Charge
IF = 50A, VR = 300V
di/dt =1400A/µs
70
Q
Total Capacitance
f = 1MHz, VR = 200V
325
f = 1MHz, VR = 400V
250
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Junction to Case Thermal Resistance
Parallel diode
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
Transistor
Series diode
To heatsink
M5
2500
-40
-40
-40
2.5
R 25
1.8
2.4
V
nC
pF
Max
0.18
0.45
0.5
Unit
°C/W
V
Typ
50
3952
Max
°C
N.m
g
Unit
kΩ
K
T: Thermistor temperature

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

July, 2006
RT =
Min
µA
A
150
125
100
4.7
160
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
Unit
V
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3–8
APTM50AM38SCTG – Rev 2
IRM
Test Conditions
APTM50AM38SCTG
SP4 Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
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4–8
APTM50AM38SCTG – Rev 2
July, 2006
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
APTM50AM38SCTG
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.16
0.7
0.12
0.5
0.08
0.3
0.04
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
300
8V
VGS=10&15V
250
I D, Drain Current (A)
7.5V
200
7V
150
6.5V
100
6V
50
VDS > ID(on)xR DS(on)MAX
250µs pulse test @ < 0.5 duty cycle
200
150
100
TJ=25°C
50
T J=125°C
5.5V
0
0
0
5
10
15
20
VDS, Drain to Source Voltage (V)
25
0
RDS(on) vs Drain Current
Normalized to
VGS=10V @ 45A
1.15
VGS=10V
1.10
1.05
1
2
3
4
5
6
7
VGS, Gate to Source Voltage (V)
8
DC Drain Current vs Case Temperature
100
I D, DC Drain Current (A)
1.20
TJ=-55°C
V GS=20V
1.00
0.95
0.90
0.85
0.80
80
60
40
20
0
0
50
100
150
200
ID, Drain Current (A)
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25
50
75
100
125
TC, Case Temperature (°C)
150
July, 2006
I D, Drain Current (A)
10
250
350
RDS(on) Drain to Source ON Resistance
1
5–8
APTM50AM38SCTG – Rev 2
Thermal Impedance (°C/W)
0.2
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25 50
75 100 125 150
ON resistance vs Temperature
2.5
VGS =10V
ID=45A
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
1.1
ID, Drain Current (A)
VGS (TH), Threshold Voltage
(Normalized)
1.2
1.0
0.9
0.8
0.7
0.6
100
limited by RDSon
Single pulse
TJ =150°C
TC=25°C
10
1ms
10ms
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
VGS , Gate to Source Voltage (V)
100000
Ciss
10000
Coss
1000
Crss
100
10
0
10
20
30
40
VDS, Drain to Source Voltage (V)
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
V DS =100V
I D=90A
12 T =25°C
J
V =250V
DS
10
VDS=400V
8
6
4
2
0
50
0
40
80 120 160 200 240 280 320
Gate Charge (nC)
July, 2006
C, Capacitance (pF)
100µs
limited by R DSon
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6–8
APTM50AM38SCTG – Rev 2
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTM50AM38SCTG
APTM50AM38SCTG
Delay Times vs Current
Rise and Fall times vs Current
120
td(off)
80
40
V DS =333V
RG =2Ω
T J=125°C
L=100µH
td(on)
20
60
40
tr
20
0
0
20
40
60
80 100 120
ID, Drain Current (A)
140
20
VDS=333V
RG=2Ω
T J=125°C
L=100µH
3
Eoff
2
Eon
1
Eoff
40
60
80
100
120
6
5
IDR, Reverse Drain Current (A)
2
Eon
1
200
Hard
switching
50
0
30
40
50
60
5
10
15
20
25
70
1000
100
10
Source to Drain Diode Forward Voltage
T J=150°C
T J=25°C
1
80
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
ID, Drain Current (A)
July, 2006
Frequency (kHz)
ZVS
250
20
Eoff
Gate Resistance (Ohms)
V DS=333V
D=50%
R G=2Ω
T J=125°C
T C=75°C
350
100
140
3
0
Operating Frequency vs Drain Current
150
120
4
140
400
ZCS
100
VDS=333V
ID=90A
TJ=125°C
L=100µH
7
I D, Drain Current (A)
300
80
0
0
20
60
Switching Energy vs Gate Resistance
8
Switching Energy (mJ)
4
40
I D, Drain Current (A)
Switching Energy vs Current
Switching Energy (mJ)
80
tf
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7–8
APTM50AM38SCTG – Rev 2
60
VDS=333V
RG=2Ω
T J=125°C
L=100µH
100
tr and t f (ns)
t d(on) and td(off) (ns)
100
APTM50AM38SCTG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.6
0.5
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
1000
TJ=25°C
75
TJ =75°C
IR Reverse Current (µA)
I F Forward Current (A)
Reverse Characteristics
Forward Characteristics
100
TJ=175°C
50
TJ =125°C
25
600
0.5
1
1.5
2
2.5
3
TJ =125°C
TJ =75°C
400
TJ=25°C
200
0
0
TJ =175°C
800
3.5
VF Forward Voltage (V)
0
200
300 400 500 600 700
VR Reverse Voltage (V)
800
Capacitance vs.Reverse Voltage
C, Capacitance (pF)
2000
1500
1000
500
0
1000
July, 2006
10
100
VR Reverse Voltage
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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8–8
APTM50AM38SCTG – Rev 2
1
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