Comchip CDBHD120L-G Low vf schottky bridge rectifier Datasheet

COMCHIP
Low VF Schottky Bridge Rectifiers
SMD DIODE SPECIALIST
Reverse Voltage: 20 - 100 Volts
Forward Current: 1.0 Amp
~
+
CDBHD120L-G Thru 1100L-G
~
–
Features
Mini-DIP
• Low Vf Schottky barrier chips in bridge
• Metal-Semiconductor junction with guard ring
• High surge current capability
• Silicon epitaxial planar chips
• For use in low voltage, high efficiency inverters, free
wheeling, and polarity protection applications
• Lead-free part, meet RoHS requirements
.106(2.7)
.090(2.3)
+
–
Mechanical Data
.031(0.8)
.019(0.5)
• Case: Mini-Dip bridge (TO-269AA) plastic molded case
• Epoxy: UL94-V0 rated flame retardant
• Terminals: Solderable per MIL-STD-750 Method 2026
• Polarity: As marked on body
• Mounting Position: Any
• Weight: 0.0078 ounces, 0.22 grams
.043(1.1)
.027(0.7)
.275(7.0)
Max.
~
.165(4.2)
.150(3.8)
~
C .02(0.5)
.016(0.41)
.006(0.15)
.067(1.7)
.057(1.3)
.193(4.90)
.177(4.50)
.051(1.3)
.035(0.9)
.106(2.7)
.090(2.3)
.114(2.90)
.094(2.40)
.008(0.2)
Max.
Unit :inch(mm)
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
CDBHD - Symbols
120L
140L
160L
180L
1100L
Units
Maximum Recurrent Peak Reverse Voltage
V RRM
20
40
60
80
100
Volts
Maximum RMS Voltage
V RMS
14
28
42
56
70
Volts
Maximum DC Blocking Voltage
V DC
20
40
60
80
100
Volts
Maximum Average Forward Rectified Current
0.2x0.2” (5.0x5.0mm) copper pad area, see Figure 1
I AV
1.0
Amps
I FSM
30.0
Amps
Peak Forward Surge Current
8.3mS single half sine-wave superimp osed on
rated load (JEDEC Me thod)
Maximum Forward Voltage at 1.0A (Note 1)
Maximum DC Reverse Current
at Rated DC Blocking Voltage
VF
T A = 25°C
T A = 100 °C
0.44
0.625
0.75
Volts
0.5
IR
mA
20.0
Typical Junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R θJA
R θJL
85.0
20.0
°C/W
TJ
-55 ~ +125
°C
T STG
-55 ~ +150
°C
Operating Junction Temperature Range
Storage Temperature Range
250
125
pF
:
Note 1. Pulse test: 300µS pu lse wi dth, 1% du ty cy cle
2. Me asured at 1.0MH z an d ap plied reverse vo ltage of 4.0 Volts
3. Therma l resistance from junction to am bient and from junction to lead P.C.B. mo unted on 0. 2x0.2”(5.0x5.0mm ) co pper pa d ar eas.
MDS0702004A
Page 1
COMCHIP
Low VF Schottky Bridge Rectifiers
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current
Peak Forward Surge Current (A)
Average Forward Current (A)
Fig.1 - Forward Current Derating Curve
1.2
1.0
0.8
0.6
CDBHD120L-G - 160L-G
0.4
CDBHD180L-G - 1100L-G
0.2
single phase half wave 60Hz
resistive or inductive load
3.75”(9.5mm) lead length
0
25
50
75
100
125
150
175
100
10
T L =110°C
8.3mS single half sine-wave
(JEDEC Method)
1
1
10
Lead Temperature ( °C)
CDBHD120L-G - 140L-G
CDBHD160L-G
CDBHD180L-G - 1100L-G
0.01
0
0.2
0.4
0.6
0.8
1.0
CDBHD120L-G - 160L-G
10
T J =125°C
1.0
T J =75°C
0.1
0.01
T J =25°C
20
40
60
80
100
120
140
Instantaneous Forward Voltage (Volts)
Percent of Rated Peak Reverse Voltage ( %)
Fig. 5 - Typical Junction Capacitance
Fig. 4B - Typeical Reverse Characteristic
1000
T J =25°C
f=1.0MHz
Junction Capacitance (pF)
100
0.001
0
CDBHD120L-G - 140L-G
100
CDBHD160L-G
CDBHD180L-G - 1100L-G
10
0.1
1.0
10
Reverse Voltage (Volts)
MDS0702004A
100
1000
Instantaneous Reverse Current (µA)
Instantaneous Forward Current (A)
pulse width =300µS
1% duty cycle, T j =25°C
Instantaneous Reverse Current (mA)
Fig. 4A - Typical Reverse Characteristics
10
0.1
100
Number of Cycles at 60 Hz
Fig. 3 - Typical Instantaneour Forward
Characteristics
1.0
SMD DIODE SPECIALIST
CDBHD180L-G - 1100L-G
100
T J =150°C
T J =125°C
10
1.0
T J =100°C
0.1
T J =25°C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage ( %)
Page 2
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