Rohm DAP202K Switching diode Datasheet

Data Sheet
Switching Diode
DAP202K
Dimensions (Unit : mm)
Applications
Ultra high speed switching
Land size figure (Unit : mm)
1.9
0.4
+0.1
-0.05
2.9±0.2
各リードとも
Each
lead has same dimension
同寸法
+0.1
0.15 -0.06
(2)
0.3~0.6
0~0.1
(1)
0.95
0.8±0.1
0.95
2.4
0.8MIN.
SMD3
1.1±0.2
0.01
1.9±0.2
0.95
1.0MIN.
+0.2
2.8±0.2
Features
1) Small mold type. (SMD3)
2) High reliability.
1.6-0.1
(3)
Construction
Silicon epitaxial planar
Structure
ROHM : SMD3
JEDEC :S0T-346
JEITA : SC-59
week code
Taping specifications (Unit : mm)
φ1.5±0.1
0
2.0±0.05
0.3±0.1
Limits
3.2±0.1
8.0±0.2
0~0.5
3.2±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
VRM
VR
Reverse voltage (DC)
IFM
Forward voltage (Single)
Average rectified forward current (Single)
Io
Isurge
Surge current (t=1us)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25°C)
Parameter
Symbol
VF
Forward voltage
φ1.05MIN
4.0±0.1
3.2±0.1
5.5±0.2
3.5±0.05
1.75±0.1
4.0±0.1
1.35±0.1
Unit
V
V
mA
mA
A
mW
°C
°C
80
80
300
100
4
200
150
55 to 150
Min.
Typ.
Max.
Unit
Conditions
IF=100mA
-
-
1.2
V
Reverse current
IR
-
-
0.1
μA
VR=70V
Capacitance between terminals
Reverse recovery time
Ct
-
-
3.5
pF
trr
-
-
4
ns
VR=6V , f=1MHz
VR=6V , IF=5mA , RL=50
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© 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.06 - Rev.A
Data Sheet
DAP202K
Ta=75℃
100
Ta=150℃
100000
10
10
Ta=150℃
Ta=25℃
Ta=25℃
1
f=1MHz
10000
1000
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=125℃
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : I F(mA)
Ta=125℃
Ta=75℃
100
Ta=25℃
10
Ta=25℃
1
0.1
0.1
0.1
100 200 300 400 500 600 700 800 900 100
0
0
10
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
50
60
880
870
860
60
50
40
30
20
AVE:17.93nA
0
VF DISPERSION MAP
6
5
4
AVE:1.80pF
3
2
Ct DISPERSION MAP
5
5
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
9
REVERSE RECOVERY TIME:trr(ns)
1cyc
10
8
7
6
5
4
3
2
1
AVE:2.50A
8.3ms
2
1
0
1
1
100
Rth(j-c)
Mounted on epoxy board
IF=100mA
IM=10mA
10
1ms
time
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
0.001
8
7
6
5
3
0.1
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
2/2
AVE:1.32kV
2
0
0.01
AVE:5.47kV
4
1
300us
1
1
100
9
Rth(j-a)
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
10
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
t
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
1000
Ifsm
8.3ms
1cyc
3
trr DISPERSION MAP
100
Ifsm
4
AVE:1.93ns
0
IFSM DISRESION MAP
0.1
7
IR DISPERSION MAP
8.3ms
0
Ta=25℃
VR=6V
f=1MHz
n=10pcs
8
0
10
Ifsm
20
1
10
15
15
9
70
20
10
10
80
850
5
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
890
0
70
Ta=25℃
VR=70V
n=10pcs
90
REVERSE CURRENT : IR(nA)
FORWARD VOLTAGE : V F(mV)
40
100
Ta=25℃
IF=100mA
n=30pcs
AVE:877.0mV
PEAK SURGE
FORWARD CURRENT : I FSM(A)
30
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
900
PEAK SURGE
FORWARD CURRENT : I FSM(A)
20
PEAK SURGE
FORWARD CURRENT : I FSM(A)
0
1
1000
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
2011.06 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
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