APTGT50SK120TG Buck chopper Fast Trench + Field Stop IGBT® Power Module Application • AC and DC motor control • Switched Mode Power Supplies NTC2 Q1 G1 Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring E1 OUT 0/VBU S SENSE NTC1 0/VBUS SENSE VBUS E1 G1 0/VBUS 0/VBUS SENSE Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant OUT OUT NTC2 NTC1 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 75 50 100 ±20 277 Tj = 125°C 100A @ 1150V TC = 25°C TC = 80°C TC = 25°C Unit V A July, 2006 0/VBU S V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT50SK120TG– Rev 2 VBUS VCES = 1200V IC = 50A @ Tc = 80°C APTGT50SK120TG All ratings @ Tj = 25°C unless otherwise specified ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 50A Tj = 125°C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM Test Conditions IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Typ 1.7 2.0 5.8 Typ 3600 190 160 90 30 420 Max Unit 250 2.1 µA 6.5 400 V nA Max Unit pF ns 90 50 520 ns 90 5 mJ 5.5 Typ Max 1200 Tj = 25°C Tj = 125°C IF = 50A Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 50 1.4 1.3 150 Tj = 125°C Tj = 25°C 250 4.5 Tj = 125°C Tj = 25°C Tj = 125°C 9 2.1 4.2 di/dt =2000A/µs www.microsemi.com Unit V VR=1200V IF = 50A VR = 600V V 70 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 5.0 Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 50A R G = 18 Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 50A R G = 18 Ω VGE = 15V Tj = 125°C VBus = 600V IC = 50A Tj = 125°C R G = 18 Ω Fall Time Tf Min 250 500 µA A 1.9 V ns July, 2006 Symbol Characteristic µC mJ 2-5 APTGT50SK120TG– Rev 2 Electrical Characteristics APTGT50SK120TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.45 0.58 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 2500 -40 -40 -40 2.5 °C/W V 150 125 100 4.7 160 °C N.m g July, 2006 SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT50SK120TG– Rev 2 ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : APTGT50SK120TG Typical Performance Curve Output Characteristics (VGE =15V) 100 Output Characteristics 100 TJ = 125°C TJ=25°C 80 80 VGE =17V VGE =13V 60 IC (A) IC (A) TJ=125°C 40 40 20 20 0 VGE =9V 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 0 3.5 12 T J=25°C 80 1 3 VCE = 600V VGE = 15V RG = 18Ω TJ = 125°C 10 TJ=125°C 8 E (mJ) 60 40 4 6 Eon Eon Eoff Er 4 TJ =125°C 20 2 0 0 5 6 7 8 9 10 11 0 12 20 Switching Energy Losses vs Gate Resistance VCE = 600V VGE =15V IC = 50A T J = 125°C 10 8 60 80 100 Reverse Bias Safe Operating Area 120 Eon 100 80 IC (A) 12 40 IC (A) VGE (V) E (mJ) 2 V CE (V) Energy losses vs Collector Current Transfert Characteristics 100 IC (A) VGE=15V 60 Eoff 6 4 60 40 Er 2 VGE =15V TJ=125°C RG=18Ω 20 0 0 0 10 20 30 40 50 60 Gate Resistance (ohms) 70 80 0 300 600 900 V CE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 IGBT 0.9 July, 2006 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT50SK120TG– Rev 2 Thermal Impedance (°C/W) 0.5 APTGT50SK120TG Forward Characteristic of diode 150 VCE=600V D=50% RG=18Ω TJ =125°C TC=75°C 70 60 ZVS 50 ZCS 40 125 100 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 80 30 T J=125°C 75 50 20 hard switching 10 T J=125°C 25 T J=25°C 0 0 0 10 20 30 40 50 IC (A) 60 70 0 80 0.5 1 1.5 VF (V) 2 2.5 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.9 Diode 0.5 0.7 0.4 0.3 0.2 0.1 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT50SK120TG– Rev 2 July, 2006 rectangular Pulse Duration (Seconds)