OPTEK OP520 Smd silicon phototransistor Datasheet

SMD Silicon Phototransistor
OP520, OP521
OP520, OP521
•
•
•
•
High Photo Sensitivity
Fast Response Time
1206 Package Size
Opaque or Water Clear Flat Lens
Description:
The OP520 and OP521 are NPN silicon phototransistor mounted in miniature SMT packages. Both the OP520
and OP521 have a flat lens however, the OP520 lens is opaque to shield the device from stray light. These sensors are packaged in 1206 size chip carriers that are compatible with most automated mounting equipment. The
OP520 and OP521 are mechanically and spectrally matched to the OP250 series infrared LEDs.
Applications
•
•
•
•
Non-Contact Position Sensing
Datum detection
Machine automation
Optical encoders
PIN
FUNCTION
1
Collector
2
Emitter
RECOMMENDED SOLDER PADS
[4.60±0.10]
.181±.0039
[1.50±0.10]
.059±.0039
[1.60±0.10]
.063±.0039
[1.60±0.10]
.063±.0039
RoHS
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 [email protected] www.optekinc.com
Issue 1.1 02/07
Page 1 of 3
SMD Silicon Phototransistor
OP520, OP521
Absolute Maximum Ratings
TA = 25o C unless otherwise noted
Storage Temperature Range
-40° C to +85° C
Operating Temperature Range
-25° C to +85° C
260° C(1)
Lead Soldering Temperature
Collector-Emitter Voltage
30 V
Emitter-Collector Voltage
5V
Collector Current
20 mA
75 mW(2)
Power Dissipation
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. De-rate linearly at 2.17 mW/° C above 25° C.
Electrical Characteristics (TA = 25°C unless otherwise noted)
SYMBOL
PARAMETER
IC(ON)
On-State Collector Current
VCE(SAT)
ICEO
TYP
MAX
UNITS
0.25
CONDITIONS
mA
VCE = 5.0V, Ee = 5.0mW/cm2 (3)
Collector-Emitter Saturation Voltage
0.4
V
IC = 100µA, Ee = 5.0mW/cm2 (3)
Collector-Emitter Dark Current
100
nA
VCE = 5.0V, Ee = 0 (4)
V(BR)CEO
Collector-Emitter Breakdown Voltage
30
V
IC = 100µA, Ee = 0
V(BR)ECO
Emitter-Collector Breakdown Voltage
5
V
IE = 100µA, Ee = 0
µs
IC = 1mA, RL = 1KΩ
tr, tf
Rise and Fall Times
15
Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than
10% over the entire lens surface of the phototransistor being tested.
(0.04Ta-3.4)
where Ta is the ambient temperature in ° C.
To Calculate typical collector dark current in µA, use the formula ICEO = 10
4.
160%
Relative Collector Current
140%
Relative On-State Collector
Current vs. Irradiance
Relative On-State Collector Current
vs. Temperature
140%
Normalized at Ee = 5mW/cm2
Conditions: VCE = 5V,
λ = 935nm, TA = 25 °C
130%
Relative Collector Current
3.
MIN
120%
100%
80%
60%
40%
20%
0
Normalized at TA = 25°C .
Conditions: VCE = 5V,
λ = 935nm, TA = 25 °C
80°C
120%
110%
100%
90%
-40°C
80%
70%
1.0
2.0
3.0
4.0
5.0
6.0
2
Ee—Irradiance (mW/cm )
7.0
8.0
-25
0
25
50
Temperature—(°C)
75
100
SMD Silicon Phototransistor
OP520, OP521
Relative Response vs.
Angular Position
Relative On-State Collector Current
vs. Collector-Emitter Voltage
100%
IC(ON) - On-State Collector Current (mA)
1.40
Relative Response
80%
60%
40%
20%
6 mW/cm2
1.20
5 mW/cm2
1.00
4 mW/cm2
0.80
3 mW/cm2
0.60
2 mW/cm2
0.40
1 mW/cm2
0.20
0%
-90
-30
0
30
60
90
0
0.1
0.2
0.3
0.4
0.5
Angular Position (Degrees)
Collector-Emitter Voltage (V)
Collector-Emitter Dark Current
vs. Temperature
Relative Response vs. Wavelength
100%
Conditions: Ee = 0 mW/cm2
VCE = 10V
80%
100
Relative Response
Collector-Emitter Dark Current (nA)
1000
-60
10
60%
40%
OP521
OP520
1
20%
0
-25
0%
0
25
50
Temperature—(°C)
75
100
400
500
600
700
800
900
Wavelength (nm)
1000 1100
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