HAT2172H Silicon N Channel Power MOS FET Power Switching REJ03G0132-0500 Rev.5.00 Sep 20, 2005 Features • • • • • High speed switching Capable of 7 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.8 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 D 5 3 12 4 G 4 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Rev.5.00 Sep 20, 2005 page 1 of 7 Symbol VDSS VGSS ID Note1 ID(pulse) IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C Tch Tstg Ratings 40 ±20 30 120 30 20 32 20 6.25 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C HAT2172H Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Rev.5.00 Sep 20, 2005 page 2 of 7 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 40 ±20 — — 1.5 — — 27 — — — — — — — — — Typ — — — — — 5.8 6.6 45 2420 480 150 0.5 32 9 4.0 12 20 Max — — ±10 1 3.0 7.5 9.2 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns — — — — 38 4.5 0.84 32 — — 1.10 — ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 40 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 15 A, VGS = 10 V Note4 ID = 15 A, VGS = 7 V Note4 ID = 15 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, VGS = 10 V, ID = 30 A VGS = 10 V, ID = 15 A, VDD ≅ 10 V, RL = 0.67 Ω, Rg = 4.7 Ω IF = 30 A, VGS = 0 Note4 IF = 30 A, VGS = 0 diF/ dt = 100 A/ µs HAT2172H Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 500 ID (A) 30 Drain Current Channel Dissipation Pch (W) 40 20 10 100 DC 10 50 100 150 Case Temperature µs s tio nT c= 1 25 °C Operation in this area is 0.1 limited by RDS(on) 0.01 0.1 200 50 10 30 100 VDS (V) VDS = 10 V Pulse Test ID (A) 4.4 V 3 50 4.0 V 40 1 Typical Transfer Characteristics Pulse Test 10 V 0.3 Drain to Source Voltage Tc (°C) Typical Output Characteristics ID (A) s =1 0m s Op era 0µ Ta = 25°C 1 shot Pulse 0 3.8 V 30 40 30 Drain Current Drain Current 1m PW 10 10 3.6 V 20 3.4 V 10 20 Tc = 75°C 10 25°C VGS = 3.0 V 0 2 4 6 8 Drain to Source Voltage –25°C 0 10 150 ID = 20 A 100 10 A 50 5A 0 4 8 12 Gate to Source Voltage Rev.5.00 Sep 20, 2005 page 3 of 7 16 20 VGS (V) 6 10 8 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 4 Gate to Source Voltage VDS (V) 200 2 100 50 20 10 VGS = 7 V 5 10 V 2 Pulse Test 1 1 0.3 10 3 Drain Current 100 30 ID (A) 1000 Static Drain to Source on State Resistance vs. Temperature 20 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2172H Pulse Test 15 ID = 20 A 5 A, 10 A 10 VGS = 7 V 5 5 A, 10 A, 20 A 10 V 0 –25 0 25 50 75 100 125 150 Case Temperature Tc 100 30 Tc = –25°C 75°C 10 25°C 3 1 0.3 0.1 0.1 Capacitance C (pF) Reverse Recovery Time trr (ns) 30 100 20 10 0.1 Ciss 3000 1000 Coss 300 Crss 100 30 di/dt = 100 A/µs VGS = 0, Ta = 25°C VGS = 0 f = 1 MHz 10 0.3 1 3 10 30 100 0 IDR (A) 5 12 8 20 10 4 VDD = 25 V 10 V 5V 8 16 Gate Charge Rev.5.00 Sep 20, 2005 page 4 of 7 24 32 Qg (nc) 20 25 30 0 40 1000 Switching Time t (ns) VGS VGS (V) 16 40 Gate to Source Voltage 20 VDD = 25 V 10 V 5V 15 Switching Characteristics ID = 30 A VDS 10 Drain to Source Voltage VDS (V) Dynamic Input Characteristics VDS (V) 10 10000 Reverse Drain Current Drain to Source Voltage 3 Typical Capacitance vs. Drain to Source Voltage 50 0 1 Drain Current ID (A) 100 30 0.3 (°C) Body-Drain Diode Reverse Recovery Time 50 VDS = 10 V Pulse Test 300 tr 100 td(off) 30 td(on) 10 tf 3 1 0.1 VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty ≤ 1 % 0.3 1 3 Drain Current 10 30 ID (A) 100 HAT2172H (mJ) Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy EAR Reverse Drain Current IDR (A) 50 10 V 40 5V VGS = 0, –5 V 30 20 10 Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 Maximum Avalanche Energy vs. Channel Temperature Derating 50 IAP = 20 A VDD = 15 V duty < 0.1 % Rg ≥ 50 Ω 40 30 20 10 0 25 50 75 100 125 150 Channel Temperature Tch (°C) VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch - c(t) = γs (t) • θch - c θch - c = 6.25°C/ W, Tc = 25°C 0.1 0.05 PDM 0.02 1 0.0 0.03 0.01 10 µ D= lse t ho PW T PW T pu 1s 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Avalanche Test Circuit VDS Monitor Avalanche Waveform EAR = L 1 2 L • IAP2 • VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID Vin 15 V 50 Ω 0 Rev.5.00 Sep 20, 2005 page 5 of 7 VDD HAT2172H Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% VDS = 10 V 90% td(on) Rev.5.00 Sep 20, 2005 page 6 of 7 10% tr 90% td(off) tf HAT2172H Package Dimensions JEITA Package Code RENESAS Code SC-100 PTZZ0005DA-A Package Name MASS[Typ.] LFPAK Unit: mm 0.080g 4.9 5.3 Max 4.0 ± 0.2 +0.05 4.2 6.1 –0.3 +0.1 3.95 5 4 0° – 8° +0.25 +0.05 0.20 –0.03 0.6 –0.20 1.3 Max 1 1.1 Max +0.03 0.07 –0.04 3.3 1.0 0.25 –0.03 0.75 Max 0.10 1.27 0.40 ± 0.06 0.25 M (Ni/Pd/Au plating) Ordering Information Part Name HAT2172H-EL-E Quantity 2500 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Sep 20, 2005 page 7 of 7 Sales Strategic Planning Div. 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