ISC BD250C Isc silicon pnp power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
BD250/A/B/C
DESCRIPTION
·Collector Current -IC= -25A
·Collector-Emitter Breakdown Voltage: V(BR)CEO = -45V(Min)- BD250; -60V(Min)- BD250A
-80V(Min)- BD250B; -100V(Min)- BD250C
·Complement to Type BD249/A/B/C
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCER
VCEO
VEBO
PARAMETER
Collector-Emitter
Voltage (RBE= 100Ω)
Collector-Emitter
Voltage
VALUE
BD250
-55
BD250A
-70
BD250B
-90
BD250C
-115
BD250
-45
BD250A
-60
BD250B
-80
BD250C
-100
UNIT
V
V
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-25
A
ICM
Collector Current-Peak
-40
A
IB
Base Current
-5
A
PC
Collector Power Dissipation
@ Ta=25℃
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
3
W
125
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance, Junction to Case
isc website:www.iscsemi.com
MAX
UNIT
1.0
℃/W
1
isc & iscsemi is registered trademark
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
BD250/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD250
V(BR)CEO
Collector-Emitter
Breakdown Voltage
MIN
TYP.
MAX
UNIT
-45
BD250A
-60
IC= -30mA; IB= 0
V
BD250B
-80
BD250C
-100
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -15A; IB= -1.5A
-1.8
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -25A; IB= -5A
-4.0
V
VBE(on)-1
Base-Emitter On Voltage
IC= -15A; VCE= -4V
-2.0
V
VBE(on)-2
Base-Emitter On Voltage
IC= -25A; VCE= -4V
-4.0
V
-0.7
mA
-1.0
mA
-1.0
mA
ICES
ICEO
Collector
Cutoff Current
Collector
Cutoff Current
BD250
VCE= -55V; VBE= 0
BD250A
VCE= -70V; VBE= 0
BD250B
VCE= -90V; VBE= 0
BD250C
VCE= -115V; VBE= 0
BD250/A
VCE= -30V;IB= 0
BD250B/C
VCE= -60V;IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1.5A; VCE= -4V
25
hFE-2
DC Current Gain
IC= -15A; VCE= -4V
10
hFE-3
DC Current Gain
IC= -25A; VCE= -4V
5
Switching times
ton
Turn-on Time
toff
Turn-off Time
isc website:www.iscsemi.com
IC= -5A; IB1= -IB2= -0.5A;
RL= 5Ω; VBE(off)= -5V
2
0.2
μs
0.4
μs
isc & iscsemi is registered trademark
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