IPD65R400CE,IPS65R400CE MOSFET 650VCoolMOSªCEPowerTransistor DPAK CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEseriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheresultingdevicesprovideallbenefitsofafastswitchingSuperjunction MOSFETwhilenotsacrificingeaseofuse.Extremelylowswitchingand conductionlossesmakeswitchingapplicationsevenmoreefficient,more compact,lighterandcooler. Features tab 1 IPAKSL tab 2 3 Drain Pin 2, Tab Gate Pin 1 •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •JEDECqualfied,Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications Source Pin 3 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorLighting Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 400 mΩ ID. 15.1 A Qg.typ 39 nC ID,pulse 30 A Eoss@400V 2.8 µJ Type/OrderingCode Package IPD65R400CE PG-TO 252 IPS65R400CE PG-TO 251 Final Data Sheet Marking 65S400CE 1 RelatedLinks see Appendix A Rev.2.0,2016-02-23 650VCoolMOSªCEPowerTransistor IPD65R400CE,IPS65R400CE TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 2 Rev.2.0,2016-02-23 650VCoolMOSªCEPowerTransistor IPD65R400CE,IPS65R400CE 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 15.1 9.5 A TC=25°C TC=100°C - 30 A TC=25°C - - 215 mJ ID=1.8A; VDD=50V; see table 10 EAR - - 0.32 mJ ID=1.8A; VDD=50V; see table 10 Avalanche current, repetitive IAR - - 1.8 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation (Non FullPAK) TO-252, TO-251 Ptot - - 118 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Continuous diode forward current IS - - 10.6 A TC=25°C Diode pulse current IS,pulse - - 30 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 2) 1) Limited by Tj max. Maximum duty cycle D=0.50 Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 3 Rev.2.0,2016-02-23 650VCoolMOSªCEPowerTransistor IPD65R400CE,IPS65R400CE 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 1.06 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Soldering temperature, wavesoldering only allowed at leads - - 260 °C Final Data Sheet Tsold 4 1.6mm (0.063 in.) from case for 10s Rev.2.0,2016-02-23 650VCoolMOSªCEPowerTransistor IPD65R400CE,IPS65R400CE 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.0 3.5 V VDS=VGS,ID=0.32mA - 10 1 - µA VDS=650,VGS=0V,Tj=25°C VDS=650,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.36 0.94 0.40 - Ω VGS=10V,ID=3.2435A,Tj=25°C VGS=10V,ID=3.2435A,Tj=150°C Gate resistance RG - 7.5 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 650 - Gate threshold voltage V(GS)th 2.5 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 710 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 41 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 32 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related2) Co(tr) - 140 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 10 - ns VDD=400V,VGS=13V,ID=4.86525A, RG=4.9Ω;seetable9 Rise time tr - 7 - ns VDD=400V,VGS=13V,ID=4.86525A, RG=4.9Ω;seetable9 Turn-off delay time td(off) - 57 - ns VDD=400V,VGS=13V,ID=4.86525A, RG=4.9Ω;seetable9 Fall time tf - 8 - ns VDD=400V,VGS=13V,ID=4.86525A, RG=4.9Ω;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 4 - nC VDD=480V,ID=4.86525A,VGS=0to 10V Gate to drain charge Qgd - 20 - nC VDD=480V,ID=4.86525A,VGS=0to 10V Gate charge total Qg - 39 - nC VDD=480V,ID=4.86525A,VGS=0to 10V Gate plateau voltage Vplateau - 5.5 - V VDD=480V,ID=4.86525A,VGS=0to 10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V 2) Final Data Sheet 5 Rev.2.0,2016-02-23 650VCoolMOSªCEPowerTransistor IPD65R400CE,IPS65R400CE Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=4.9A,Tj=25°C 280 - ns VR=400V,IF=4.9A,diF/dt=100A/µs; see table 19 - 2.8 - µC VR=400V,IF=4.9A,diF/dt=100A/µs; see table 19 - 17 - A VR=400V,IF=4.9A,diF/dt=100A/µs; see table 19 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 6 Rev.2.0,2016-02-23 650VCoolMOSªCEPowerTransistor IPD65R400CE,IPS65R400CE 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation(Non-FullPAK) Diagram2:Safeoperatingarea(Non-FullPAK) 102 120 110 100 1 µs 101 10 µs 90 100 µs 1 ms 80 100 DC ID[A] Ptot[W] 70 60 50 10-1 40 30 10-2 20 10 0 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea(Non-FullPAK) Diagram4:Max.transientthermalimpedance(Non-FullPAK) 2 101 10 101 1 µs 10 µs 100 100 µs 0.5 1 ms ID[A] DC ZthJC[K/W] 100 10-1 0.2 0.1 0.05 10-1 10-2 10-3 0.02 0.01 single pulse 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 7 Rev.2.0,2016-02-23 650VCoolMOSªCEPowerTransistor IPD65R400CE,IPS65R400CE Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 32 20 20 V 28 20 V 10 V 10 V 8V 24 15 8V 7V ID[A] ID[A] 20 7V 16 6V 10 12 5.5 V 6V 8 5 5V 5.5 V 4 4.5 V 5V 4.5 V 0 0 5 10 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 1.6 1.0 1.4 0.8 5V 5.5 V 6V 6.5 V 7V RDS(on)[Ω] RDS(on)[Ω] 1.2 1.0 10 V 0.6 98% typ 0.8 0.4 0.6 0.4 0 5 10 15 20 0.2 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=3.2A;VGS=10V 8 Rev.2.0,2016-02-23 650VCoolMOSªCEPowerTransistor IPD65R400CE,IPS65R400CE Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 35 10 9 30 8 25 °C 25 120 V 480 V 7 6 ID[A] VGS[V] 20 15 5 4 150 °C 3 10 2 5 1 0 0 2 4 6 8 0 10 0 5 10 15 VGS[V] 20 25 30 35 40 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=4.9Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 250 25 °C 125 °C 200 101 IF[A] EAS[mJ] 150 100 0 10 50 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=1.8A;VDD=50V 9 Rev.2.0,2016-02-23 650VCoolMOSªCEPowerTransistor IPD65R400CE,IPS65R400CE Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 104 760 740 720 103 Ciss 680 C[pF] VBR(DSS)[V] 700 660 102 Coss 640 101 620 Crss 600 580 -75 -50 -25 0 25 50 75 100 125 150 175 100 0 100 Tj[°C] 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 6 5 Eoss[µJ] 4 3 2 1 0 0 100 200 300 400 500 600 VDS[V] Eoss=f(VDS) Final Data Sheet 10 Rev.2.0,2016-02-23 650VCoolMOSªCEPowerTransistor IPD65R400CE,IPS65R400CE 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt IF QF IF dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 t 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 11 ID VDS Rev.2.0,2016-02-23 650VCoolMOSªCEPowerTransistor IPD65R400CE,IPS65R400CE 6PackageOutlines *) mold flash not included DIM A A1 b b2 b3 c c2 D D1 E E1 e e1 N H L L3 L4 F1 F2 F3 F4 F5 F6 MILLIMETERS MIN MAX 2.16 2.41 0.00 0.15 0.64 0.89 0.65 1.15 5.00 5.50 0.46 0.60 0.46 0.98 5.97 6.22 5.02 5.84 6.40 6.73 4.70 5.60 2.29 (BSC) 4.57 (BSC) 3 9.40 10.48 1.18 1.70 0.90 1.25 0.51 1.00 10.60 6.40 2.20 5.80 5.76 1.20 INCHES MIN 0.085 0.000 0.025 0.026 0.197 0.018 0.018 0.235 0.198 0.252 0.185 0.370 0.046 0.035 0.020 MAX 0.095 0.006 0.035 0.045 0.217 0.024 0.039 0.245 0.230 0.265 0.220 0.090 (BSC) 0.180 (BSC) 3 0.413 0.067 0.049 0.039 0.417 0.252 0.087 0.228 0.227 0.047 DOCUMENT NO. Z8B00003328 SCALE 0 2.0 0 2.0 4mm EUROPEAN PROJECTION ISSUE DATE 01-09-2015 REVISION 05 Figure1OutlinePG-TO252,dimensionsinmm/inches Final Data Sheet 12 Rev.2.0,2016-02-23 650VCoolMOSªCEPowerTransistor IPD65R400CE,IPS65R400CE DOCUMENT NO. Z8B00003329 DIM A A1 b b2 b4 c c2 D D1 E E1 e e1 N L L1 L2 MILLIMETERS MIN MAX 2.18 2.40 0.80 1.14 0.64 0.89 0.65 1.15 4.95 5.50 0.46 0.59 0.46 0.89 5.97 6.22 5.04 5.55 6.35 6.73 4.60 5.21 2.29 4.57 3 3.00 3.60 0.80 1.25 0.88 1.28 INCHES MIN 0.086 0.031 0.025 0.026 0.195 0.018 0.018 0.235 0.198 0.250 0.181 MAX 0.094 0.045 0.035 0.045 0.217 0.023 0.035 0.245 0.219 0.265 0.205 0.090 0.180 3 0.118 0.031 0.035 SCALE 0 2.0 0 2.0 4mm EUROPEAN PROJECTION ISSUE DATE 21-10-2015 0.142 0.049 0.050 REVISION 06 Figure2OutlinePG-TO251,dimensionsinmm/inches Final Data Sheet 13 Rev.2.0,2016-02-23 650VCoolMOSªCEPowerTransistor IPD65R400CE,IPS65R400CE 7AppendixA Table11RelatedLinks • IFXCoolMOSTMCEWebpage:www.infineon.com • IFXCoolMOSTMCEapplicationnote:www.infineon.com • IFXCoolMOSTMCEsimulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 14 Rev.2.0,2016-02-23 650VCoolMOSªCEPowerTransistor IPD65R400CE,IPS65R400CE RevisionHistory IPD65R400CE, IPS65R400CE Revision:2016-02-23,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-02-23 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 15 Rev.2.0,2016-02-23